Abstract: Methods and an etch gas composition for etching a contact opening in a dielectric layer are provided. Embodiments of the method use a plasma generated from an etch gas composed of C4F8 and/or C4F6, an oxygen source, and a carrier gas in combination with tetrafluoroethane (C2F4) or a halofluorocarbon analogue of C2F4.

Abstract: A semiconductor device comprises a substrate, a word line, an insulation material, and an etch stop material. The substrate comprises a pillar that may comprise an active area. The word line is formed in the substrate. The insulation material is formed on the word line. The etch stop material is formed on the insulating material and around the pillar.

Abstract: Methods of etching into silicon oxide-containing material with an etching ambient having at least 75 volume percent helium. The etching ambient may also include carbon monoxide, O2 and one or more fluorocarbons. The openings formed in the silicon oxide -containing material may be utilized for fabrication of container capacitors, and such capacitors may be incorporated into DRAM.

Abstract: Methods of etching into silicon oxide-containing material with an etching ambient having at least 75 volume percent helium. The etching ambient may also include carbon monoxide, O2 and one or more fluorocarbons. The openings formed in the silicon oxide-containing material may be utilized for fabrication of container capacitors, and such capacitors may be incorporated into DRAM.

Abstract: Methods of etching into silicon oxide-containing material with an etching ambient having at least 75 volume percent helium. The etching ambient may also include carbon monoxide, O2 and one or more fluorocarbons. The openings formed in the silicon oxide-containing material may be utilized for fabrication of container capacitors, and such capacitors may be incorporated into DRAM.

Abstract: Some embodiments include methods of forming semiconductor constructions. Oxide is formed over a substrate, and first material is formed over the oxide. Second material is formed over the first material. The second material may be one or both of polycrystalline and amorphous silicon. A third material is formed over the second material. A pattern is transferred through the first material, second material, third material, and oxide to form openings. Capacitors may be formed within the openings. Some embodiments include semiconductor constructions in which an oxide is over a substrate, a first material is over the oxide, and a second material containing one or both of polycrystalline and amorphous silicon is over the first material. Third, fourth and fifth materials are over the second material. An opening may extend through the oxide; and through the first, second, third, fourth and fifth materials.

Abstract: Some embodiments include methods of forming semiconductor constructions. Oxide is formed over a substrate, and first material is formed over the oxide. Second material is formed over the first material. The second material may be one or both of polycrystalline and amorphous silicon. A third material is formed over the second material. A pattern is transferred through the first material, second material, third material, and oxide to form openings. Capacitors may be formed within the openings. Some embodiments include semiconductor constructions in which an oxide is over a substrate, a first material is over the oxide, and a second material containing one or both of polycrystalline and amorphous silicon is over the first material. Third, fourth and fifth materials are over the second material. An opening may extend through the oxide; and through the first, second, third, fourth and fifth materials.

Abstract: Some embodiments include methods of forming semiconductor constructions. Oxide is formed over a substrate, and first material is formed over the oxide. Second material is formed over the first material. The second material may be one or both of polycrystalline and amorphous silicon. A third material is formed over the second material. A pattern is transferred through the first material, second material, third material, and oxide to form openings. Capacitors may be formed within the openings. Some embodiments include semiconductor constructions in which an oxide is over a substrate, a first material is over the oxide, and a second material containing one or both of polycrystalline and amorphous silicon is over the first material. Third, fourth and fifth materials are over the second material. An opening may extend through the oxide; and through the first, second, third, fourth and fifth materials.

Abstract: Methods of etching into silicon oxide-containing material with an etching ambient having at least 75 volume percent helium. The etching ambient may also include carbon monoxide, O2 and one or more fluorocarbons. The openings formed in the silicon oxide-containing material may be utilized for fabrication of container capacitors, and such capacitors may be incorporated into DRAM.

Abstract: Methods of etching into silicon oxide-containing material with an etching ambient having at least 75 volume percent helium. The etching ambient may also include carbon monoxide, O2 and one or more fluorocarbons. The openings formed in the silicon oxide-containing material may be utilized for fabrication of container capacitors, and such capacitors may be incorporated into DRAM.

Abstract: Some embodiments include methods of forming semiconductor constructions. Oxide is formed over a substrate, and first material is formed over the oxide. Second material is formed over the first material. The second material may be one or both of polycrystalline and amorphous silicon. A third material is formed over the second material. A pattern is transferred through the first material, second material, third material, and oxide to form openings. Capacitors may be formed within the openings. Some embodiments include semiconductor constructions in which an oxide is over a substrate, a first material is over the oxide, and a second material containing one or both of polycrystalline and amorphous silicon is over the first material. Third, fourth and fifth materials are over the second material. An opening may extend through the oxide; and through the first, second, third, fourth and fifth materials.

Abstract: Methods and an etch gas composition for etching a contact opening in a dielectric layer are provided. Embodiments of the method use a plasma generated from an etch gas composed of C4F8 and/or C4F6, an oxygen source, and a carrier gas in combination with tetrafluoroethane (C2F4) or a halofluorocarbon analogue of C2F4.

Abstract: Methods of etching into silicon oxide-containing material with an etching ambient having at least 75 volume percent helium. The etching ambient may also include carbon monoxide, O2 and one or more fluorocarbons. The openings formed in the silicon oxide-containing material may be utilized for fabrication of container capacitors, and such capacitors may be incorporated into DRAM.