Patents by Inventor Russell C. Ellwanger
Russell C. Ellwanger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7223323Abstract: Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.Type: GrantFiled: July 8, 2003Date of Patent: May 29, 2007Assignee: Applied Materials, Inc.Inventors: Michael X. Yang, Ming Xi, Russell C. Ellwanger, Eric B. Britcher, Bernardo Donoso, Lily L. Pang, Svetlana Sherman, Henry Ho, Anh N. Nguyen, Alexander N. Lerner, Allen L. D'Ambra, Arulkumar Shanmugasundram, Tetsuya Ishikawa, Yevgeniy Rabinovich, Dmitry Lubomirsky, Yeuk-Fai Edwin Mok, Son T. Nguyen
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Publication number: 20040118694Abstract: Embodiments of the invention generally provide an electrochemical processing system configured to provide multiple chemistries for a single plating process. The multiple chemistries are generally delivered to individual plating cells positioned on the processing system. The individual chemistries may generally be used to conduct direct plating on a barrier layer, alloy plating, plating on a thin seed layer, optimized feature fill and bulk fill plating, plating with minimized defects, and/or any other plating process wherein multiple chemistries may be utilized to take advantage of the desirable characteristics of each chemistry.Type: ApplicationFiled: May 14, 2003Publication date: June 24, 2004Applicant: Applied Materials, Inc.Inventors: Michael X. Yang, Ming Xi, Russell C. Ellwanger, Eric B. Britcher
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Publication number: 20040016637Abstract: Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.Type: ApplicationFiled: July 8, 2003Publication date: January 29, 2004Applicant: APPLIED MATERIALS, INC.Inventors: Michael X. Yang, Ming Xi, Russell C. Ellwanger, Eric B. Britcher, Bernardo Donoso, Lily L. Pang, Svetlana Sherman, Henry Ho, Anh N. Nguyen, Alexander N. Lerner, Allen L. D'Ambra, Arulkumar Shanmugasundram, Tetsuya Ishikawa, Yevgeniy Rabinovich, Dmitry Lubomirsky, Yeuk-Fai Edwin Mok, Son T. Nguyen
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Patent number: 6548402Abstract: A method of forming a titanium nitride (TiN) layer using a reaction between ammonia (NH3) and titanium tetrachloride (TiCl4). In one embodiment, an NH3:TiCl4 ratio of about 8.5 is used to deposit a TiN layer at a temperature of about 500° C. at a pressure of about 20 torr. In another embodiment, a composite TiN layer is formed by alternately depositing TiN layers of different thicknesses, using process conditions having different NH3:TiCl4 ratios. In one preferred embodiment, a TiN layer of less than about 20 Å is formed at an NH3:TiCl4 ratio of about 85, followed by a deposition of a thicker TiN layer at an NH3:TiCl4 ratio of about 8.5. By repeating the alternate film deposition using the two different process conditions, a composite TiN layer is formed. This composite TiN layer has an improved overall step coverage and reduced stress, compared to a standard TiN process, and is suitable for small geometry plug fill applications.Type: GrantFiled: June 11, 1999Date of Patent: April 15, 2003Assignee: Applied Materials, Inc.Inventors: Shulin Wang, Ming Xi, Frederick Wu, Ramanujapuram A. Srinivas, Yehuda Demayo, Zvi Lando, Mei Chang, Russell C. Ellwanger
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Patent number: 6517592Abstract: A temperature-controlled exhaust assembly with cold trap capability. One embodiment of the exhaust assembly comprises a multi-heater design which allows for independent multi-zone closed-loop temperature control. Another embodiment comprises a compact multi-valve uni-body design incorporating a single heater for simplified closed-loop temperature control. The cold trap incorporates a heater for temperature control at the inlet of the trap to minimize undesirable deposits. One embodiment also comprises a multi-stage cold trap and a particle trap. As a removable unit, this cold trap provides additional safety in the handling and disposal of the adsorbed condensables.Type: GrantFiled: December 19, 2000Date of Patent: February 11, 2003Assignee: Applied Materials, Inc.Inventors: Salvador P. Umotoy, Lawrence Chung-Lai Lei, Russell C. Ellwanger, Ronald L. Rose, Joel Huston, James Jin-Long Chen
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Publication number: 20020064598Abstract: A method of forming a titanium nitride (TiN) layer using a reaction between ammonia (NH3) and titanium tetrachloride (TiCl4). In one embodiment, an NH3:TiCl4 ratio of about 8.5 is used to deposit a TiN layer at a temperature of about 500° C. at a pressure of about 20 torr. In another embodiment, a composite TiN layer is formed by alternately depositing TiN layers of different thicknesses, using process conditions having different NH3:TiCl4 ratios. In one preferred embodiment, a TiN layer of less than about 20 Å is formed at an NH3:TiCl4 ratio of about 85, followed by a deposition of a thicker TiN layer at an NH3:TiCl4 ratio of about 8.5. By repeating the alternate film deposition using the two different process conditions, a composite TiN layer is formed. This composite TiN layer has an improved overall step coverage and reduced stress, compared to a standard TiN process, and is suitable for small geometry plug fill applications.Type: ApplicationFiled: June 11, 1999Publication date: May 30, 2002Inventors: SHULIN WANG, MING XI, FREDERICK WU, RAMANUJAPURAM A. SRINIVAS, YEHUDA DEMAYO, ZVI LANDO, MEI CHANG, RUSSELL C. ELLWANGER
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Patent number: 6365495Abstract: A process for chemical vapor deposition of titanium nitride film using thermal decomposition of a metal-organic compound is disclosed. In particular, the deposition of titanium nitride film from tetrakis dimethylamino-titanium (TDMAT) is performed at a temperature preferably below 350° C. in the presence of helium and nitrogen. The process is performed at a total pressure of about 5 torr, a nitrogen dilutant gas flow of at least 500 sccm, preferably about 1000 sccm, and an edge purge gas flow of at least 500 sccm. These process parameters, coupled with an improved thermal conduction between the wafer and the heated pedestal, lead to a conformal deposition of titanium nitride film at a rate of at least 6 Å/sec.Type: GrantFiled: February 9, 1999Date of Patent: April 2, 2002Assignee: Applied Materials, Inc.Inventors: Shulin Wang, Huan Luo, Keith K. Koai, Ming Xi, Mei Chang, Russell C. Ellwanger
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Publication number: 20020001928Abstract: A process for chemical vapor deposition of titanium nitride film using thermal decomposition of a metal-organic compound is disclosed. In particular, the deposition of titanium nitride film from tetrakis dimethylamino-titanium (TDMAT) is performed at a temperature preferably below 350° C. in the presence of helium and nitrogen. The process is performed at a total pressure of about 5 torr, a nitrogen dilutant gas flow of at least 500 sccm, preferably about 1000 sccm, and an edge purge gas flow of at least 500 sccm. These process parameters, coupled with an improved thermal conduction between the wafer and the heated pedestal, lead to a conformal deposition of titanium nitride film at a rate of at least 6 Å/sec.Type: ApplicationFiled: February 9, 1999Publication date: January 3, 2002Inventors: SHULIN WANG, HUAN LUO, KEITH K. KOAI, MING XI, MEI CHANG, RUSSELL C. ELLWANGER
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Publication number: 20010050053Abstract: A temperature-controlled exhaust assembly with cold trap capability. One embodiment of the exhaust assembly comprises a multi-heater design which allows for independent multi-zone closed-loop temperature control. Another embodiment comprises a compact multi-valve uni-body design incorporating a single heater for simplified closed-loop temperature control. The cold trap incorporates a heater for temperature control at the inlet of the trap to minimize undesirable deposits. One embodiment also comprises a multi-stage cold trap and a particle trap. As a removable unit, this cold trap provides additional safety in the handling and disposal of the adsorbed condensables.Type: ApplicationFiled: December 19, 2000Publication date: December 13, 2001Applicant: Applied Materials, Inc.Inventors: Salvador P. Umotoy, Lawrence Chung-Lai Lei, Russell C. Ellwanger, Ronald L. Rose, Joel Huston, James Jin-Long Chen
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Publication number: 20010004879Abstract: A temperature-controlled exhaust assembly with cold trap capability. One embodiment of the exhaust assembly comprises a multi-heater design which allows for independent multi-zone closed-loop temperature control. Another embodiment comprises a compact multi-valve uni-body design incorporating a single heater for simplified closed-loop temperature control. The cold trap incorporates a heater for temperature control at the inlet of the trap to minimize undesirable deposits. One embodiment also comprises a multi-stage cold trap and a particle trap. As a removable unit, this cold trap provides additional safety in the handling and disposal of the adsorbed condensables.Type: ApplicationFiled: December 19, 2000Publication date: June 28, 2001Applicant: Applied Materials, Inc.Inventors: Salvador P. Umotoy, Lawrence Chung-Lai Lei, Russell C. Ellwanger, Ronald L. Rose, Joel Huston, James Jin-Long Chen
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Patent number: 6206971Abstract: A temperature-controlled exhaust assembly with cold trap capability. One embodiment of the exhaust assembly comprises a multi-heater design which allows for independent multi-zone closed-loop temperature control. Another embodiment comprises a compact multi-valve uni-body design incorporating a single heater for simplified closed-loop temperature control. The cold trap incorporates a heater for temperature control at the inlet of the trap to minimize undesirable deposits. One embodiment also comprises a multi-stage cold trap and a particle trap. As a removable unit, this cold trap provides additional safety in the handling and disposal of the adsorbed condensables.Type: GrantFiled: March 29, 1999Date of Patent: March 27, 2001Assignee: Applied Materials, Inc.Inventors: Salvador P. Umotoy, Lawrence Chung-Lai Lei, Russell C. Ellwanger, Ronald L. Rose, Joel Huston, James Jin-Long Chen
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Patent number: 6159299Abstract: A wafer pedestal with a purge ring that circumscribes a peripheral edge of the wafer pedestal. The purge ring contains plurality of passages that are located proximate the peripheral edge of said wafer pedestal such that purge gas is directed towards the peripheral edge. Additionally, the purge ring cooperates with an edge ring assembly that circumscribes the purge ring. The purge ring and the edge ring assembly allow a dual-purge flow pattern to be established, which significantly reduces the accumulation of undesirable deposits upon the wafer pedestal.Type: GrantFiled: February 9, 1999Date of Patent: December 12, 2000Assignee: Applied Materials, Inc.Inventors: Keith K. Koai, Lawrence Chung-Lai Lei, Russell C. Ellwanger
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Patent number: 4946803Abstract: A Schottky-type diode is fabricated by a process that enables the diodes conductor-to-semiconductor barrier height .phi..sub.B to be controlled by adjusting the thickness of a metal silicide layer (22) which forms a rectifying junction (20) with an N-type semiconductor (24). In fabricating one version of the diode, a metallic layer (70) consisting of two or more metals such as platinum and nickel is deposited on an N-type silicon semiconductor (68) and heated to create a metal silicide layer (72) consisting of a lower layer (62) and an upper layer (74) of different average composition. A portion of the upper layer is then removed, allowing .phi..sub.B to be adjusted suitably.Type: GrantFiled: December 8, 1988Date of Patent: August 7, 1990Assignee: North American Philips Corp., Signetics DivisionInventor: Russell C. Ellwanger
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Patent number: 4892843Abstract: The invention relates to a method of manufacturing a semiconductor device, in which a tungsten layer is provided on a surface of a substrate by reduction of tungsten hexafluoride with hydrogen.According to the invention, the contact resistance of the tungsten with the substrate is considerably reduced by first providing a tungsten layer on the substrate by reduction of tungsten hexafluoride with silane.Type: GrantFiled: December 28, 1988Date of Patent: January 9, 1990Assignee: U.S. Philips CorporationInventors: Johannes E. J. Schmitz, Antonius J. M. Van Dijk, Russell C. Ellwanger
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Patent number: 4851369Abstract: After having formed contact islands (20) comprising at least one layer of silicide (20) of titanium or cobalt, these islands are covered by a complementary metallic layer (30) obtained by selective growth of tungsten or molybdenum, which is localized at the said islands. This complementary metallic layer especially serves as a stopping layer during etching of contact openings (33) into an isolating layer (32) supporting the remaining part of the structure of interconnections.Type: GrantFiled: November 7, 1988Date of Patent: July 25, 1989Assignee: U.S. Philips CorporationInventors: Russell C. Ellwanger, Johannes E. J. Schmitz
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Patent number: 4816879Abstract: A Schottky-type diode has a conductor-to-semiconductor barrier height .phi..sub.B that is controlled by adjusting the thickness of a metal silicide layer (22) which forms a rectifying junction (20) with an N-type semiconductor (24). The silicide layer is constituted with two or more metals such as platinum and nickel.Type: GrantFiled: December 8, 1982Date of Patent: March 28, 1989Assignee: North American Philips Corporation, Signetics DivisionInventor: Russell C. Ellwanger
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Patent number: 4594769Abstract: A structure having substantial surface evenness is created by a method in which an insulating layer (24) that has an upward protrusion (26) is formed on a patterned conductive layer (20) having a corresponding upward protrusion (22). A further layer (28) having a generally planar surface is formed on the insulating layer. Using an etchant that attacks the further layer much more than the insulating layer, the further layer is etched to expose at least part of the insulating protrusion. The further layer and the insulating layer (as it becomes exposed) are then etched with an etchant that attacks both of them at rates not substantially different from each other. This brings the upper surface down without exposing the conductive layer, particularly its upward protrusion.Type: GrantFiled: June 15, 1984Date of Patent: June 17, 1986Assignee: Signetics CorporationInventor: Russell C. Ellwanger