Abstract: Obtain a first data set, a second data set, and a machine learning model. Construct a sensitive subspace of the first data set that defines a fair metric for distance among elements of the first data set. Fairly train the machine learning model on the first data set using a distributionally robust optimization approach based on the fair metric. Produce an individually fair set of labels by applying the fairly trained machine learning model to the second data set. Allocate a resource according to the individually fair set of labels.

Abstract: The invention relates to a mechanical lock (37) for a plurality of keys (26) that can be authorized with a different code (39), with discriminated opening using a selection device (1) that can be activated manually from outside, a signaling element for displaying the selected code (2) (3), a manual closure (4) and locking (19) (15) mechanism, integrated with a modular set of lockers (FIG. 15) for delivery home and collection of parcels. The invention allows the use of a limited number of modular lockers for a larger set of users without requiring computer applications, electricity or an internet connection during the delivery, which is especially for common areas of communities of residents, building lobbies, housing estates, shared spaces or offices.

Abstract: The invention relates to a mechanical lock (37) for a plurality of keys (26) that can be authorized with a different code (39), with discriminated opening using a selection device (1) that can be activated manually from outside, a signaling element for displaying the selected code (2) (3), a manual closure (4) and locking (19) (15) mechanism, integrated with a modular set of lockers (FIG. 15) for delivery home and collection of parcels. The invention allows the use of a limited number of modular lockers for a larger set of users without requiring computer applications, electricity or an internet connection during the delivery, which is especially for common areas of communities of residents, building lobbies, housing estates, shared spaces or offices.

Abstract: The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously doping the silicon substrate and forming a low-resistance ohmic contact to it. A self-doping negative contact may be formed from unalloyed silver which may be applied to the silicon substrate by either sputtering, screen printing a paste or evaporation. The silver is coated with a layer of dopant. Once applied, the silver, substrate and dopant are heated to a temperature above the Ag—Si eutectic temperature (but below the melting point of silicon). The silver liquefies more than a eutectic proportion of the silicon substrate. The temperature is then decreased towards the eutectic temperature.

Abstract: The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously doping the silicon substrate and forming a low-resistance ohmic contact to it. A self-doping negative contact may be formed from unalloyed silver which may be applied to the silicon substrate by either sputtering, screen printing a paste or evaporation. The silver is coated with a layer of dopant. Once applied, the silver, substrate and dopant are heated to a temperature above the Ag—Si eutectic temperature (but below the melting point of silicon). The silver liquefies more than a eutectic proportion of the silicon substrate. The temperature is then decreased towards the eutectic temperature.

Abstract: The present invention provides a system for self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously doping the silicon substrate and forming a low-resistance ohmic contact to it. The silver is coated with a layer of dopant. Once applied, the silver, substrate and dopant are heated to a temperature above the Ag—Si eutectic temperature (but below the melting point of silicon). The silver liquefies more than a eutectic proportion of the silicon substrate. This alloy of silver and silicon is the final contact material, and is composed of eutectic proportions of silicon and silver. Under eutectic proportions there is significantly more silver than silicon in the final contact material, thereby insuring good electrical conductivity of the final contact material.

Abstract: The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously doping the silicon substrate and forming a low-resistance ohmic contact to it. A self-doping negative contact may be formed from unalloyed silver which may be applied to the silicon substrate by either sputtering, screen printing a paste or evaporation. The silver is coated with a layer of dopant. Once applied, the silver, substrate and dopant are heated to a temperature above the Ag—Si eutectic temperature (but below the melting point of silicon). The silver liquefies more than a eutectic proportion of the silicon substrate. The temperature is then decreased towards the eutectic temperature.

Abstract: The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously doping the silicon substrate and forming a low-resistance ohmic contact to it. A self-doping negative contact may be formed from unalloyed silver which may be applied to the silicon substrate by either sputtering, screen printing a paste or evaporation. The silver is coated with a layer of dopant. Once applied, the silver, substrate and dopant are heated to a temperature above the Ag—Si eutectic temperature (but below the melting point of silicon). The silver liquefies more than a eutectic proportion of the silicon substrate. The temperature is then decreased towards the eutectic temperature.

Abstract: The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously doping the silicon substrate and forming a low-resistance ohmic contact to it. A self-doping negative contact may be formed from unalloyed silver which may be applied to the silicon substrate by either sputtering, screen printing a paste or evaporation. The silver is coated with a layer of dopant. Once applied, the silver, substrate and dopant are heated to a temperature above the Ag-Si eutectic temperature (but below the melting point of silicon). The silver liquefies more than a eutectic proportion of the silicon substrate. The temperature is then decreased towards the eutectic temperature.

Abstract: The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously doping the silicon substrate and forming a low-resistance ohmic contact to it. A self-doping negative contact may be formed from unalloyed silver which may be applied to the silicon substrate by either sputtering, screen printing a paste or evaporation. The silver is coated with a layer of dopant. Once applied, the silver, substrate and dopant are heated to a temperature above the Ag—Si eutectic temperature (but below the melting point of silicon). The silver liquefies more than a eutectic proportion of the silicon substrate. The temperature is then decreased towards the eutectic temperature.

Abstract: A process for fabricating a solar cell is described. The process includes: (1) providing a base layer, (2) fabricating an emitter layer of p-type conductivity on a same side as the non-illuminated surface of the base layer to provide a strongly doped p-type emitter layer and a p-n junction between the n-type base layer and the p-type emitter layer. The base layer of the present invention has n-type conductivity and is defined by an illuminated surface and a non-illuminated surface. The illuminated surface has light energy impinging thereon when the solar cell is exposed to the light energy and the non-illuminated surface is opposite the illuminated surface.