Abstract: The present disclosure discloses a prepackaging structure of a semiconductor light emitting device, comprising: a semiconductor luminescent appliance, and a pressure sensitive phosphor film directly bonded to a luminous surface of the semiconductor luminescent appliance, wherein the pressure sensitive phosphor film comprises a base body formed by precuring an organosilicone composition, and phosphor particles are uniformly dispersed in the base body. The present disclosure further discloses a semiconductor light emitting device, comprising: a semiconductor luminescent appliance, and a fully cured body of a pressure sensitive phosphor film directly bonded to a luminous surface of the semiconductor luminescent appliance.

Abstract: This invention relates generally to silicon based photoresist compositions that can be used in forming low k dielectric constant materials suitable for use in electronic devices, methods of their use and the electronic devices made therefrom.

Abstract: A polymer comprising a siloxane polymer having at least one Si—OH group and at least one Si—OR group, where R is condensation stabilizing group optionally having a reactive functional group, wherein the siloxane polymer, when placed into a solvent, has a weight average molecular weight increase of less than or equal to 50% after aging for one week at 40° C. as measured by GPC is provided.

Abstract: This invention relates generally to silicon based photoresist compositions that can be used in forming low k dielectric constant materials suitable for use in electronic devices, methods of their use and the electronic devices made therefrom.

Abstract: The invention relates to compositions and methods of removing silicon-based anti-reflective coatings/hardmask layers.

Abstract: The present invention relates to a composition comprising: (a) a polymer having at least one repeating unit of formula where R1 is a non-hydrolysable group and n is an integer ranging from 1 to 3; and (b) a crosslinking catalyst. The composition is useful in forming low k dielectric constant materials and as well as hard mask and underlayer materials with anti-reflective properties for the photolithography industry.

Abstract: The present invention relates to an organic spin coatable antireflective coating composition comprising a polymer comprising at least one unit with 3 or more fused aromatic rings in the backbone of the polymer and at least one unit with an aliphatic moeity in the backbone of the polymer. The invention further relates to a process for imaging the present composition.

Abstract: The present invention relates to an organic spin on hard mask antireflective coating composition comprising a polymer comprising at least one unit of fused aromatic rings in the backbone of the polymer and at least one unit with a cycloaliphatic moiety in the backbone of the polymer. The invention further relates to a process for making the polymer and a process for imaging the present composition.

Abstract: The present invention relates to an antireflecting coating composition which is capable of forming a crosslinked coating underneath a layer of photoresist comprising a silicon polymer, where the silicon polymer comprises at least one unit with the structure 1, where, R1 is selected from C1-C4 alkyl. The invention also relates to a process for imaging this composition.

Abstract: High silicon-content resin composition that can be used to form thin film thermosets, useful in forming low k dielectric constant materials and as well as hard mask materials with anti-reflective properties for the photolithography industry are disclosed.

Abstract: A polymer comprising a siloxane polymer having at least one Si—OH group and at least one Si—OR group, where R is condensation stabilizing group optionally having a reactive functional group, wherein the siloxane polymer, when placed into a solvent, has a weight average molecular weight increase of less than or equal to 50% after aging for one week at 40° C. as measured by GPC is provided.

Abstract: The present invention relates to process for making a siloxane polymer which comprises at least one Si—OH group and at least one Si—OR group, where R is a moiety other than hydrogen, comprising reacting one or more silane reactants together in the presence of a hydrolysis catalyst in either a water/alcohol mixture or in one or more alcohols to form the siloxane polymer; and separating the siloxane polymer from the water/alcohol mixture or the alcohol(s).

Abstract: The present invention relates to an antireflective coating composition comprising, (i) a thermal acid generator; (ii) a crosslinkable polymer comprising at least one aromatic group; and, (iii) a polymeric crosslinker comprising at least one unit of structure (6), where R11 to R13 is independently selected from H, (C1-C6) alkyl and aromatic group, R14 and R15 are independently (C1-C10) alkyl. The invention also relates to a process for imaging the antireflective coating composition of the present invention.

Abstract: The process of the present invention relates to imaging a photoresist film coated over an antireflective coating film comprising a) forming an antireflective coating film from an antireflective coating composition, where the composition comprises a siloxane polymer, b) treating the antireflective film with an aqueous alkaline treating solution, c) rinsing the antireflective film treated with an aqueous rinsing solution, d) forming a coating of a photoresist over the film of the antireflective coating composition, e) imagewise exposing the photoresist film, and, f) developing the photoresist with an aqueous alkaline developing solution.

Abstract: An assembly of a semiconductor die attached to a substrate is made with a composition comprising compounds that contain an oxazoline functionality and an electron acceptor or an electron donor functionality. Electron donor functionalities include styrenic, cinnamyl, and vinyl ether groups. Electron acceptor functionalities include maleimide, acrylate, fumarate, and maleate groups. An exemplary compound has the structure: formula (I).

Abstract: The present invention relates to an organic spin coatable antireflective coating composition comprising a polymer comprising at least one unit with 3 or more fused aromatic rings in the backbone of the polymer and at least one unit with an aliphatic moeity in the backbone of the polymer. The invention further relates to a process for imaging the present composition.

Abstract: The present invention relates to an organic spin coatable antireflective coating composition comprising a polymer comprising at least one unit with 3 or more fused aromatic rings in the backbone of the polymer and at least one unit with an aliphatic moeity in the backbone of the polymer. The invention further relates to a process for imaging the present composition.

Abstract: The present invention relates to an antireflecting coating composition which is capable of forming a crosslinked coating underneath a layer of photoresist comprising a silicon polymer, where the silicon polymer comprises at least one unit with the structure 1, where, R1 is selected from C1-C4 alkyl. The invention also relates to a process for imaging this composition.

Abstract: The present invention relates to a composition comprising: (a) a polymer having at least one repeating unit of formula where R1 is a non-hydrolysable group and n is an integer ranging from 1 to 3; and (b) a crosslinking catalyst. The composition is useful in forming low k dielectric constant materials and as well as hard mask and underlayer materials with anti-reflective properties for the photolithography industry.

Abstract: The invention relates to compositions and methods of removing silicon-based anti-reflective coatings/hardmask layers.