Abstract: A process is disclosed for cooling a material that includes semiconductor nanoparticles in matrix material by anti-Stokes up-conversion. The semiconductor nanoparticle matrix is irradiated by a laser with a photonic wavelength matched to the anti-Stokes photoluminescence of the semiconductor nanoparticle bandgap. The semiconductor nanoparticles absorb the laser photon and phonons (heat) from lattice vibrations to photoluminescence photons with higher energy than the photon that were absorbed. A net cooling effect is generated from the lower energy and lower temperature in the material after anti-Stoke up-conversion.

Abstract: A process is disclosed for cooling a material that includes semiconductor nanoparticles in matrix material by anti-Stokes up-conversion. The semiconductor nanoparticle matrix is irradiated by a laser with a photonic wavelength matched to the anti-Stokes photoluminescence of the semiconductor nanoparticle bandgap. The semiconductor nanoparticles absorb the laser photon and phonons (heat) from lattice vibrations to photoluminescence photons with higher energy than the photon that were absorbed. A net cooling effect is generated from the lower energy and lower temperature in the material after anti-Stoke up-conversion.

Abstract: A process is disclosed for cooling a material that includes semiconductor nanoparticles in matrix material by anti-Stokes up-conversion. The semiconductor nanoparticle matrix is irradiated by a laser with a photonic wavelength matched to the anti-Stokes photoluminescence of the semiconductor nanoparticle bandgap. The semiconductor nanoparticles absorb the laser photon and phonons (heat) from lattice vibrations to photoluminescence photons with higher energy than the photon that were absorbed. A net cooling effect is generated from the lower energy and lower temperature in the material after anti-Stoke up-conversion.

Abstract: A process is disclosed for restructuring crystalline grain structure and grain size of a material to produce an ultrafine-grain structure. An electron beam source is configured in relation to specific properties of a material forming a solid body to selectively irradiate a surface and a subsurface of that body with electrons at desired locations on the body and to create at least one selectively localized molten pool of defined size in the body. Heat is generated sufficiently rapidly by the beam source to create thermal gradients of sufficient magnitude to permit the body outside of the pool to act as a heat sink and rapidly cool the at least one molten pool, whereby an ultrafine-grain structure and grain size is produced by freezing grain growth upon occurrence of crystal nucleation.

Abstract: An article composed of sintered particles is produced by depositing ligand-containing particles on a substrate, then scanning the substrate with an electron beam that generates sufficient surface and subsurface heating to substantially eliminate the ligands and melt or sinter the particles into a cohesive film with superior charge carrier properties. The particles are sintered or melted together to form a polycrystalline layer that is substantially ligand-free to form, for example, a film such as a continuous polycrystalline film. The scanning operation is conducted so as to heat treat a controllably localized region at and below a surface of the particles by selecting a rate of deposited energy at the region to exceed a rate of conduction away from the substrate.

Abstract: An article composed of sintered particles is produced by depositing ligand-containing particles on a substrate, then scanning the substrate with an electron beam that generates sufficient surface and subsurface heating to substantially eliminate the ligands and melt or sinter the particles into a cohesive film with superior charge carrier properties. The particles are sintered or melted together to form a polycrystalline layer that is substantially ligand-free to form, for example, a film such as a continuous polycrystalline film. The scanning operation is conducted so as to heat treat a controllably localized region at and below a surface of the particles by selecting a rate of deposited energy at the region to exceed a rate of conduction away from the substrate.