Abstract: A mesa etch may form the geometry of microLED structures. However, the mesa etch may induce defects in the microLED structures that decreases the efficiency of the microLEDs. To correct these defects, a dry etch process may be performed that incrementally removes the surface layers of the microLED structures with the defects. The dry etch may be configured to incrementally remove a small outer layer, and thus may preserve the overall shape of the microLED structures while leaving a smooth surface for the application of a dielectric layer. The dry etch process may include two steps that are repeatedly performed. A first gas may react with the surface to form a gallium compound layer, and a second gas may then selectively remove that layer. The dry etch may include plasma-based etches or reactive thermal etches.