Patents by Inventor Ryan M. Pakulski
Ryan M. Pakulski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230091035Abstract: Systems and methods for processing workpieces, such as semiconductor workpieces are provided. One example embodiment is directed to a processing system for processing a plurality of workpieces. The processing system can include a loadlock chamber, a transfer chamber, and at least two processing chamber having two or more processing stations. The processing system further includes a storage chamber for storing replaceable parts. The transfer chamber includes a workpiece handling robot. The workpiece handling robot can be configured to transfer a plurality of replaceable parts from the processing stations to the storage chamber.Type: ApplicationFiled: November 28, 2022Publication date: March 23, 2023Inventors: Martin L. Zucker, Peter J. Lembesis, Ted Tevis, Ryan M. Pakulski, Michael X. Yang
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Patent number: 11515127Abstract: An end effector for moving workpieces and replaceable parts within a system for processing workpieces. The end effector may include an arm portion extending between a first arm end and a second arm end along the axial direction. The end effector may further include a spatula portion extending between a first spatula end and a second spatula end, the first spatula end being adjacent the second arm end. Further, the end effector may include a first support member extending outwardly from the spatula portion, a second support member extending outwardly from the spatula portion, and a shared support member extending outwardly from the arm portion. The shared support member and the first support member together to support workpieces of a first diameter, and the shared support member and the second support member together support replaceable parts of a second diameter.Type: GrantFiled: May 13, 2020Date of Patent: November 29, 2022Assignees: BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD, MATTSON TECHNOLOGY, INC.Inventors: Martin L. Zucker, Peter J. Lembesis, Ryan M. Pakulski
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Patent number: 11508560Abstract: A focus ring adjustment assembly of a system for processing workpieces under vacuum, where the focus ring may include a lower side having a first surface portion and a second surface portion, the first surface portion being vertically above the second surface portion. The adjustment assembly may include a pin configured to selectively contact the first surface portion of the focus ring, and an actuator operable to move the pin along the vertical direction between an extended position and a retracted position. The extended position of the pin may be associated with the distal end of the pin contacting the first surface of the focus ring and the focus ring being accessible for removal by a workpiece handling robot from the vacuum process chamber.Type: GrantFiled: May 13, 2020Date of Patent: November 22, 2022Assignees: BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD, MATTSON TECHNOLOGY, INC.Inventors: Martin L. Zucker, Peter J. Lembesis, Ryan M. Pakulski, Shawming Ma
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Patent number: 11348767Abstract: A plasma processing apparatus is provided. The plasma processing apparatus includes a processing chamber defining a vertical direction and a lateral direction. The plasma processing apparatus includes a pedestal disposed within the processing chamber. The pedestal is configured to support the substrate. The plasma processing apparatus includes a radio frequency (RF) disposed within the processing chamber. The RF bias electrode defines a RF zone extending between a first end of the RF bias electrode and a second end of the RF bias electrode along the lateral direction. The plasma processing apparatus includes a focus ring disposed within the processing chamber. The plasma processing apparatus further includes a focus ring adjustment assembly. The focus ring adjustment assembly includes a lift pin positioned outside of the RF zone. The lift pin is movable along the vertical direction to adjust a distance between the pedestal and the focus ring along the vertical direction.Type: GrantFiled: May 13, 2020Date of Patent: May 31, 2022Assignees: BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD, MATTSON TECHNOLOGY, INC.Inventors: Martin L. Zucker, Peter J. Lembesis, Ryan M. Pakulski, Shawming Ma
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Publication number: 20210398775Abstract: Plasma processing apparatus for processing a workpiece are provided. In one example embodiments, a plasma processing apparatus for processing workpiece includes a processing chamber, a plasma chamber separated from the processing chamber by a separation grid, an inductively coupled plasma source configured to generate a plasma in the plasma chamber, and a gas injection insert arranged in the plasma chamber having a peripheral portion and a center portion, the center portion extends a vertical distance past the peripheral portion. The apparatus includes a pedestal disposed within the processing chamber configured to support a workpiece, a first gas injection zone configured to inject a process gas into the process chamber at a first flat surface, and a second gas injection zone configured to inject a process gas into the process chamber at a second flat surface. The separation grid has a plurality of holes configured to allow the passage of neutral particles generated in the plasma to the processing chamber.Type: ApplicationFiled: July 28, 2021Publication date: December 23, 2021Inventors: Shawming Ma, Vladimir Nagorny, Dixit V. Desai, Ryan M. Pakulski
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Publication number: 20210343506Abstract: Apparatus and methods for processing a workpiece using a plasma are provided. In one example implementation, an apparatus can include a processing chamber. The apparatus can include a plasma chamber comprising a dielectric tube defining a sidewall. The apparatus can include an inductively coupled plasma source. The inductively coupled plasma source can include an RF generator configured to energize an induction coil disposed about the dielectric tube. The apparatus can include a separation grid separating the processing chamber from the plasma chamber. The apparatus can include a controller configured to operate the inductively coupled plasma source in a pulsed mode. During the pulsed mode the RF generator is configured to apply a plurality of pulses of RF power to the induction coil. A frequency of pulses can be in a range of about 1 kHz to about 100 kHz.Type: ApplicationFiled: April 30, 2021Publication date: November 4, 2021Inventors: Ting Xie, Haochen Li, Shuang Meng, Qiqun Zhang, Dave Kohl, Shawming Ma, Haichun Yang, Hua Chung, Ryan M. Pakulski, Michael X. Yang
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Publication number: 20210257196Abstract: Plasma processing apparatus and methods are provided. In one example implementation, the plasma processing apparatus includes a processing chamber. The plasma processing apparatus includes a pedestal disposed in the processing chamber. The pedestal is operable to support a workpiece. The plasma processing apparatus includes a plasma chamber disposed above the processing chamber in a vertical direction. The plasma chamber includes a dielectric sidewall. The plasma processing apparatus includes a separation grid separating the processing chamber from the plasma chamber. The plasma processing apparatus includes a first plasma source proximate the dielectric sidewall. The first plasma source is operable to generate a remote plasma in the plasma chamber above the separation grid. The plasma processing apparatus includes a second plasma source. The second plasma source is operable to generate a direct plasma in the processing chamber below the separation grid.Type: ApplicationFiled: April 8, 2021Publication date: August 19, 2021Inventors: Shawming Ma, Hua Chung, Michael X. Yang, Dixit V. Desai, Ryan M. Pakulski
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Publication number: 20200365405Abstract: A focus ring adjustment assembly of a system for processing workpieces under vacuum, where the focus ring may include a lower side having a first surface portion and a second surface portion, the first surface portion being vertically above the second surface portion. The adjustment assembly may include a pin configured to selectively contact the first surface portion of the focus ring, and an actuator operable to move the pin along the vertical direction between an extended position and a retracted position. The extended position of the pin may be associated with the distal end of the pin contacting the first surface of the focus ring and the focus ring being accessible for removal by a workpiece handling robot from the vacuum process chamber.Type: ApplicationFiled: May 13, 2020Publication date: November 19, 2020Inventors: Martin L. Zucker, Peter J. Lembesis, Ryan M. Pakulski, Shawming Ma
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Publication number: 20200365377Abstract: A plasma processing apparatus is provided. The plasma processing apparatus includes a processing chamber defining a vertical direction and a lateral direction. The plasma processing apparatus includes a pedestal disposed within the processing chamber. The pedestal is configured to support the substrate. The plasma processing apparatus includes a radio frequency (RF) disposed within the processing chamber. The RF bias electrode defines a RF zone extending between a first end of the RF bias electrode and a second end of the RF bias electrode along the lateral direction. The plasma processing apparatus includes a focus ring disposed within the processing chamber. The plasma processing apparatus further includes a focus ring adjustment assembly. The focus ring adjustment assembly includes a lift pin positioned outside of the RF zone. The lift pin is movable along the vertical direction to adjust a distance between the pedestal and the focus ring along the vertical direction.Type: ApplicationFiled: May 13, 2020Publication date: November 19, 2020Inventors: Martin L. Zucker, Peter J. Lembesis, Ryan M. Pakulski, Shawming Ma
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Publication number: 20200361094Abstract: An end effector for moving workpieces and replaceable parts within a system for processing workpieces. The end effector may include an arm portion extending between a first arm end and a second arm end along the axial direction. The end effector may further include a spatula portion extending between a first spatula end and a second spatula end, the first spatula end being adjacent the second arm end. Further, the end effector may include a first support member extending outwardly from the spatula portion, a second support member extending outwardly from the spatula portion, and a shared support member extending outwardly from the arm portion. The shared support member and the first support member together to support workpieces of a first diameter, and the shared support member and the second support member together support replaceable parts of a second diameter.Type: ApplicationFiled: May 13, 2020Publication date: November 19, 2020Inventors: Martin L. Zucker, Peter J. Lembesis, Ryan M. Pakulski
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Publication number: 20200365381Abstract: Systems and methods for processing workpieces, such as semiconductor workpieces are provided. One example embodiment is directed to a processing system for processing a plurality of workpieces. The processing system can include a loadlock chamber, a transfer chamber, and at least two processing chamber having two or more processing stations. The processing system further includes a storage chamber for storing replaceable parts. The transfer chamber includes a workpiece handling robot. The workpiece handling robot can be configured to transfer a plurality of replaceable parts from the processing stations to the storage chamber.Type: ApplicationFiled: May 13, 2020Publication date: November 19, 2020Inventors: Martin L. Zucker, Peter J. Lembesis, Ted Tevis, Ryan M. Pakulski, Michael X. Yang
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Publication number: 20200258718Abstract: Plasma processing apparatus and associated methods are provided. In one example implementation, the plasma processing apparatus can include a gas supply in a processing chamber of a plasma processing apparatus, such as an inductively coupled plasma processing apparatus. The gas supply can include one or more injectors. Each of the one or more injectors can be angled relative to a direction parallel to a radius of the workpiece to produce a rotational gas flow relative to a direction perpendicular to a center of the workpiece. Such gas supply can improve process uniformity, workpiece edge critical dimension tuning, gas ionization efficiency, and/or symmetric flow inside the processing chamber to reduce particle deposition on a workpiece and can also reduce heat localization from a stagnate flow.Type: ApplicationFiled: February 7, 2019Publication date: August 13, 2020Inventors: Tinghao F. Wang, Yorkman Ma, Yun Yang, Shawming Ma, Moo-Hyun Kim, Peter J. Lembesis, Ryan M. Pakulski
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Publication number: 20200243305Abstract: A plasma process apparatus is provided. The plasma processing apparatus includes a plasma chamber and a processing chamber. The processing chamber includes a substrate holder operable to support a substrate. The plasma processing apparatus further includes a separation grid separating the plasma chamber from the processing chamber. The separation grid includes a gas delivery system. The gas delivery system defines a channel, an inlet and a plurality of outlets in fluid communication with the inlet via the channel. The gas delivery system is configured to reduce non-uniformities associated with a treatment process performed on the substrate.Type: ApplicationFiled: January 16, 2020Publication date: July 30, 2020Inventors: Weimin Zeng, Chun Yan, Dixit V. Desai, Hua Chung, Michael X. Yang, Peter Lembesis, Ryan M. Pakulski, Martin Zucker
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Publication number: 20200161162Abstract: Systems and methods for processing workpieces, such as semiconductor workpieces are provided. In one example implementation, an apparatus includes a first processing chamber comprising a first processing station and a second processing station. The first processing station and the second processing station are separated by a first distance. The apparatus includes one or more second processing chambers. The one or more second processing chambers collectively comprising a third processing station and a fourth processing station. The third processing station and the fourth processing station are separated by a second distance. The second distance is different from the first distance. A workpiece handling robot is configured to pick up the at least one first workpiece and the at least one second workpiece from the first and second processing stations and to drop off the at least one first workpiece and the second workpiece at the third and fourth processing stations.Type: ApplicationFiled: October 30, 2019Publication date: May 21, 2020Inventors: Michael X. Yang, Ryan M. Pakulski, Pete Lembesis
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Publication number: 20190198301Abstract: Plasma processing apparatus and methods are provided. In one example implementation, the plasma processing apparatus includes a processing chamber. The plasma processing apparatus includes a pedestal disposed in the processing chamber. The pedestal is operable to support a workpiece. The plasma processing apparatus includes a plasma chamber disposed above the processing chamber in a vertical direction. The plasma chamber includes a dielectric sidewall. The plasma processing apparatus includes a separation grid separating the processing chamber from the plasma chamber. The plasma processing apparatus includes a first plasma source proximate the dielectric sidewall. The first plasma source is operable to generate a remote plasma in the plasma chamber above the separation grid. The plasma processing apparatus includes a second plasma source. The second plasma source is operable to generate a direct plasma in the processing chamber below the separation grid.Type: ApplicationFiled: December 13, 2018Publication date: June 27, 2019Inventors: Shawming Ma, Hua Chung, Michael X. Yang, Dixit V. Desai, Ryan M. Pakulski
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Publication number: 20190131112Abstract: Plasma processing apparatus for processing a bevel portion of a substrate, such as a semiconductor wafer are provided. In one example implementation, a plasma processing apparatus includes a processing chamber and a plasma chamber separated from the processing chamber by a separation grid. The apparatus includes an inductively coupled plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a pedestal disposed within the processing chamber. The pedestal can be configured to support a semiconductor wafer. The separation grid can have an edge portion and a blocking portion. The edge portion can be disposed above an edge portion of the semiconductor wafer when supported on the pedestal. The edge portion of the separation grid can have a plurality of holes configured to allow the passage of active radicals generating in the plasma to the processing chamber.Type: ApplicationFiled: October 17, 2018Publication date: May 2, 2019Inventors: Shawming Ma, Dixit V. Desai, Ryan M. Pakulski
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Publication number: 20180358204Abstract: Plasma processing apparatus for processing a workpiece are provided. In one example embodiment, a plasma processing apparatus for processing workpiece includes a processing chamber, a plasma chamber separated from the processing chamber by a separation grid, an inductively coupled plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a pedestal disposed within the processing chamber configured to support a workpiece. The apparatus a first gas injection zone configured to inject a process gas into the plasma chamber at a first flat surface, and a second gas injection zone configured to inject a process gas into the plasma chamber at a second flat surface. The separation grid has a plurality of holes configured to allow the passage of neutral particles generated in the plasma to the processing chamber.Type: ApplicationFiled: February 9, 2018Publication date: December 13, 2018Inventors: Shawming Ma, Vladimir Nagorny, Dixit V. Desai, Ryan M. Pakulski
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Publication number: 20180053628Abstract: Separation grids for plasma processing apparatus are provided. In some embodiments, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a processing chamber. The processing chamber can be separated from the plasma chamber. The apparatus can include a separation grid. The separation grid can separate the plasma chamber and the processing chamber. The apparatus can include a temperature control system. The temperature control system can be configured to regulate the temperature of the separation grid to affect a uniformity of a plasma process on a substrate. In some embodiments, a separation grid can have a varying thickness profile across a cross-section of the separation grid to affect a flow of neutral species through the separation grid.Type: ApplicationFiled: May 10, 2017Publication date: February 22, 2018Inventors: Vijay M. Vaniapura, Shawming Ma, Vladimir Nagorny, Ryan M. Pakulski
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Publication number: 20170207077Abstract: Systems, methods, and apparatus for processing a substrate in a plasma processing apparatus using a variable pattern separation grid are provided. In one example implementation, a plasma processing apparatus can have a plasma chamber and a processing chamber separated from the plasma chamber. The apparatus can further include a variable pattern separation grid separating the plasma chamber and the processing chamber. The variable pattern separation grid can include a plurality grid plates. Each grid plate can have a grid pattern with one or more holes. At least one of the plurality of grid plates is movable relative to the other grid plates in the plurality of grid plates such that the variable pattern separation grid can provide a plurality of different composite grid patterns.Type: ApplicationFiled: January 11, 2017Publication date: July 20, 2017Inventors: Vladimir Nagorny, Shawming Ma, Vijay M. Vaniapura, Ryan M. Pakulski
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Patent number: 9184072Abstract: An apparatus and method are described for processing workpieces in a treatment process. A multi-wafer chamber defines a chamber interior including at least two processing stations within the chamber interior such that the processing stations share the chamber interior. Each processing station includes a plasma source and a workpiece pedestal for exposing one of the workpieces to the treatment process using a respective plasma source. The chamber includes an arrangement of one or more electrically conductive surfaces that are asymmetrically disposed about the workpiece at each processing station in a way which produces a given level of uniformity of the treatment process on a major surface of each workpiece. A shield arrangement provides an enhanced uniformity of exposure of the workpiece to the respective one of the plasma sources that is greater than the given level of uniformity that would be provided in an absence of the shield arrangement.Type: GrantFiled: July 27, 2007Date of Patent: November 10, 2015Assignee: Mattson Technology, Inc.Inventors: Daniel J. Devine, Charles Crapuchettes, Dixit Desai, Rene George, Vincent C. Lee, Yuya Matsuda, Jonathan Mohn, Ryan M. Pakulski, Stephen E. Savas, Martin Zucker