Abstract: A method for forming a semiconductor device and selectively forming a salicide layer is described. In one embodiment, the method includes depositing a metal layer over a semiconductor substrate having a first area and a second area, wherein the first area and the second area include silicon, removing the metal layer over the second gate electrode, and reacting the metal layer with the first area to form a salicide layer over the first area. In one embodiment, the first area and the second area include a first gate electrode and a second gate electrode, respectively.

Abstract: A buffer memory may be configured to temporarily store data in a number of queues. A processor may be configured to measure a fullness of the buffer memory. The processor may also be configured to assign sizes to the number of queues based on the fullness of the buffer memory. The processor may also adjust thresholds of drop profiles associated with the number of queues based on the sizes assigned to the number of queues.

Abstract: A paint mask for shielding windows while painting mullions of a window, made of a flexible sheet material having an attractiveness for holding to glass. The paint mask is sized for covering a pane of glass held by mullions. The sheet is engaged flatly to the glass pane to receive paint while the mullion is painted. A method of shielding a glass pane while painting mullions is disclosed.