Patents by Inventor Ryan Wayne Wuthrich

Ryan Wayne Wuthrich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
    Patent number: 7713829
    Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
    Type: Grant
    Filed: November 22, 2006
    Date of Patent: May 11, 2010
    Assignee: International Business Machines Corporation
    Inventors: Jack Oon Chu, Douglas Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich
  • INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYER TO ENHANCE YIELD FOR Si-Ge BIPOLAR TECHNOLOGY
    Publication number: 20080124881
    Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
    Type: Application
    Filed: November 22, 2006
    Publication date: May 29, 2008
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jack Ooh Chu, Douglas Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich
  • Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
    Patent number: 7173274
    Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
    Type: Grant
    Filed: September 29, 2004
    Date of Patent: February 6, 2007
    Assignee: International Business Machines Corporation
    Inventors: Jack Oon Chu, Douglas Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich
  • Single reactor, multi-pressure chemical vapor deposition for semiconductor devices
    Patent number: 6875279
    Abstract: An apparatus and method for forming at least a portion of an electronic device include a High Vacuum-Chemical Vapor Deposition (UHV-CVD) system and a Low Pressure-Chemical Vapor Deposition (LPCVD) system using a common reactor. The invention overcomes the problem of silicon containing wafers being dipped in HF acid prior to CVD processing, and the problem of surface passivation between processes in multiple CVD reactors.
    Type: Grant
    Filed: November 16, 2001
    Date of Patent: April 5, 2005
    Assignee: International Business Machines Corporation
    Inventors: Jack O. Chu, Basanth Jagannathan, Ryan Wayne Wuthrich
  • Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
    Patent number: 6815802
    Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
    Type: Grant
    Filed: April 15, 2002
    Date of Patent: November 9, 2004
    Assignee: International Business Machines Corporation
    Inventors: Jack Oon Chu, Douglass Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich
  • Single reactor, multi-pressure chemical vapor deposition for semiconductor devices
    Publication number: 20030094130
    Abstract: An apparatus and method for forming at least a portion of an electronic device include a High Vacuum-Chemical Vapor Deposition (UHV-CVD) system and a Low Pressure-Chemical Vapor Deposition (LPCVD) system using a common reactor. The invention overcomes the problem of silicon containing wafers being dipped in HF acid prior to CVD processing, and the problem of surface passivation between processes in multiple CVD reactors.
    Type: Application
    Filed: November 16, 2001
    Publication date: May 22, 2003
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jack O. Chu, Basanth Jagannathan, Ryan Wayne Wuthrich
  • Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
    Publication number: 20020121676
    Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
    Type: Application
    Filed: April 15, 2002
    Publication date: September 5, 2002
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jack Oon Chu, Douglas Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich
  • INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYER TO ENHANCE YIELD FOR SI-GE BIPOLAR TECHNOLOGY
    Publication number: 20020100917
    Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
    Type: Application
    Filed: January 30, 2001
    Publication date: August 1, 2002
    Applicant: International Business Machines Corporation
    Inventors: Jack Oon Chu, Douglas Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich
  • Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
    Patent number: 6426265
    Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
    Type: Grant
    Filed: January 30, 2001
    Date of Patent: July 30, 2002
    Assignee: International Business Machines Corporation
    Inventors: Jack Oon Chu, Douglas Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich
  • Process for treating a semiconductor substrate
    Patent number: 6354309
    Abstract: Semiconductor substrates are contacted with a deionized water solution containing an acidic material.
    Type: Grant
    Filed: September 29, 2000
    Date of Patent: March 12, 2002
    Assignee: International Business Machines Corporation
    Inventors: Russell H. Arndt, Glenn Walton Gale, Frederick William Kern, Jr., Karen P. Madden, Harald F. Okorn-Schmidt, George Francis Ouimet, Jr., Dario Salgado, Ryan Wayne Wuthrich
  • Process for treating a semiconductor substrate
    Patent number: 6173720
    Abstract: Semiconductor substrates are contacted with a deionized water solution containing an acidic material.
    Type: Grant
    Filed: December 2, 1998
    Date of Patent: January 16, 2001
    Assignee: International Business Machines Corporation
    Inventors: Russell H. Arndt, Glenn Walton Gale, Frederick William Kern, Jr., Karen P. Madden, Harald F. Okorn-Schmidt, George Francis Ouimet, Jr., Dario Salgado, Ryan Wayne Wuthrich
  • Stacking system for substrates
    Patent number: 5741131
    Abstract: A stacking system includes a frame having recesses therein used to partially define openings that permit gas generated during firing of a substrate within the space defined by the frame to escape without adversely affecting the substrate. A relatively thin tile placed on the frame provides the system with an additional level for substrates.
    Type: Grant
    Filed: January 31, 1996
    Date of Patent: April 21, 1998
    Assignee: International Business Machines Corporation
    Inventors: Joseph Paul DeGeorge, Kurt Elmer Bastian, Michael Alan Cohn, Christopher Neal Collins, Italo DiNunzio, Ryan Wayne Wuthrich