Abstract: A method for drying a wet semiconductor substrate includes immersing the wet substrate in a rinsing liquid in a sealed drying chamber, producing a volume of vaporized drying fluid in a vapor generator, establishing fluid communication between the vapor generator and the drying chamber, transferring the vaporized drying fluid to the drying chamber by removing the rinsing liquid from the drying chamber, and allowing the vaporized drying fluid to condense on the wet substrate. The method further includes providing vacuum pressure within the drying chamber and backfilling the drying chamber with an inert gas to substantially achieve atmospheric pressure.

Abstract: A method for drying a wet semiconductor substrate includes the steps of immersing the substrate in a drying liquid in a drying chamber; removing the substrate from the drying liquid within the drying chamber; purging the drying chamber with inert gas; exposing the substrate to vacuum pressure within the drying chamber; and backfilling the drying chamber with the inert gas to substantially achieve atmospheric pressure. A system for drying a semiconductor substrate includes a drying chamber, a drying liquid reservoir in fluid communication with the drying chamber, a liquid pump, an inert gas supply in fluid communication with the drying chamber, and a vacuum pressure source in fluid communication with the drying chamber.