Abstract: A pressure detector including a case connectable to a flow route and attachable to a predetermined attaching surface; and a membrane member attached inside the case and with which a liquid-phase portion to be supplied with the liquid in the flow route and a gas-phase portion to be supplied with gas are separated from each other, the membrane member being displaceable in accordance with a pressure of the liquid supplied to the liquid-phase portion, the pressure detector detecting the pressure of the liquid in the flow route by detecting a pressure in the gas-phase portion. The pressure detector includes an inlet port including a connecting portion connectable to the flow route, and a flow-route portion through which the liquid flows into an inlet opening of the liquid-phase portion; and an outlet port including a connecting portion connectable to the flow route, and a flow-route portion through which the liquid having flowed into the liquid-phase portion is discharged from an outlet opening.

Abstract: A pressure detector that includes a case connectable to a flow route for liquid, and a membrane member provided in the case and with which a liquid-phase portion to be supplied with the liquid in the flow route and a gas-phase portion to be supplied with gas are separated from each other, the membrane member being displaceable in accordance with a pressure of the liquid supplied to the liquid-phase portion, the pressure detector detecting the pressure of the liquid in the flow route by detecting a pressure in the gas-phase portion. The gas-phase portion has an opening through which the gas is allowed to be introduced or discharged in accordance with the displacement of the membrane member, and a secured portion secured for the introduction or discharge of the gas through the opening during the displacement of the membrane member toward a side of the gas-phase portion.

Abstract: A pattern forming method includes applying a photoresist composition onto a substrate to form a resist film. The resist film is exposed to an ArF excimer laser. The exposed resist film is developed with a developer. the photoresist composition includes a polymer and a radiation-sensitive acid generator. The polymer has a structural unit having an acid-dissociable group, does not have a phenolic hydroxyl group and exhibits decreased solubility in the developer by dissociation of the acid-dissociable group. The developer includes a nitrogen-containing compound, and the nitrogen-containing compound is at least one of: a condensed ring compound or bridged cyclic compound including at least two nitrogen atoms as ring-forming atoms, a compound having a nitrogen-containing aromatic heterocyclic structure and an acyclic tertiary amine structure in a molecule thereof, an onium salt compound represented by Formula (A-1), or a compound represented by Formula (A-2).

Abstract: A pattern forming method included applying a photoresist composition on a substrate to form a resist film on the substrate. The resist film is exposed. The exposed resist film is developed with a developer to form a pattern. The pattern is contacted with a processing liquid to process the pattern. The photoresist composition includes a polymer [A] and a radiation-sensitive acid generator [B]. The polymer includes a structural unit (I) including an acid-dissociable group that dissociates due to action of an acid. The polymer has solubility to the developer that reduces due to dissociation of the acid-dissociable group. The processing liquid exhibits acidity.

Abstract: The present invention is directed to a method for forming a crystalline cobalt silicide film, comprising the steps of: applying to a surface made of silicon a composition obtained by mixing a compound represented by the following formula (1A) or (1B): SinX2n+2??(1A) SimX2m??(1B) wherein each X in the formulas (1A) and (1B) is a hydrogen atom or a halogen atom, n is an integer of 1 to 10, and m is an integer of 3 to 10, or a polymer thereof with a zero-valent cobalt complex to form a coating film; heating the coated film at 550 to 900° C. so as to form a two-layer film which is composed of a first layer made of a crystalline cobalt silicide on the surface made of silicon and a second layer containing silicon atoms, oxygen atoms, carbon atoms and cobalt atoms on the first layer; and removing the second layer of the two-layer film.

Abstract: A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.

Abstract: A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.

Abstract: The present invention is directed to a method for forming a crystalline cobalt silicide film, comprising the steps of: applying to a surface made of silicon a composition obtained by mixing a compound represented by the following formula (1A) or (1B): SinX2n+2??(1A) SimX2m??(1B) wherein each X in the formulas (1A) and (1B) is a hydrogen atom or a halogen atom, n is an integer of 1 to 10, and m is an integer of 3 to 10, or a polymer thereof with a zero-valent cobalt complex to form a coating film; heating the coated film at 550 to 900° C. so as to form a two-layer film which is composed of a first layer made of a crystalline cobalt silicide on the surface made of silicon and a second layer containing silicon atoms, oxygen atoms, carbon atoms and cobalt atoms on the first layer; and removing the second layer of the two-layer film.

Abstract: A patterning method comprising the steps of: the first step of disposing at least one silane compound selected from the group consisting of a silicon hydride compound and a silicon halide compound in the space between a substrate and a patterned mold; and the second step of subjecting the silane compound to at least one treatment selected from a heat treatment and an ultraviolet exposure treatment. A pattern composed of silicon can be formed by carrying out the second step in an inert atmosphere or a reducing atmosphere and a pattern composed of silicon oxide can be formed by carrying out at least part of the second step in an oxygen-containing atmosphere.

Abstract: A polymer production process comprising reacting a compound represented by the following formula (1) in the presence of a binuclear metal complex represented by the following formula (2). R4-nMHn??(1) (in the formula (1), R is a monovalent organic group, M is a silicon atom or a germanium atom, and n is 2 or 3.) [CpM(?-CH2)]2??(2) (in the formula (2), Cp is a cyclopentadienyl-based ligand, M is a metal atom selected from Rh and Ir, and the bond between M's is a double bond.

Abstract: A polysilane production process comprising reacting a specific silane compound typified by a cyclic silane compound represented by the following formula (2) in the presence of a binuclear metal complex represented by the following formula (4). SijH2j??(2) (in the formula (2), j is an integer of 3 to 10.) [CpM(?-CH2)]2??(4) (in the formula (4), Cp is a cyclopentadienyl-based ligand, M is a metal atom selected from Rh and Ir, and the bond between M's is a double bond.