Abstract: Superconducting wire material, superconducting wire material connection structure, superconducting wire material connection method, and treatment method of superconducting wire material end are shown. According to one implementation, a superconducting wire material connection structure includes, a first superconducting wire material, a second superconducting wire material, and a third superconducting wire material. The first superconducting wire material and the second superconducting wire material each include an end provided with a concave section in which at least a superconducting layer is removed and a filling section in which filling material is filled in the concave section. The first superconducting wire material and the second superconducting wire material are positioned so that the ends oppose to each other. A third superconducting wire material is connected to both the first superconducting wire material and the second superconducting wire material.

Abstract: A method for generating a pattern includes defining a footprint of a main pattern in each cell, arranging a first cell and a second cell which has an auxiliary pattern outside the footprint of the main pattern, side by side in such a manner that the auxiliary pattern outside the footprint of the second cell is present in the footprint of the main pattern of the first cell, and generating the pattern of the mask by removing a pattern element of the auxiliary pattern outside the footprint of the second cell in a portion where the pattern element of the auxiliary pattern outside the footprint of the second cell is close to or overlaps with the main pattern in the first cell of the first cell and the second cell arranged side by side.

Abstract: The present invention provides a pattern correction method of, when a plurality of pattern elements on a mask used to process a line pattern formed on a substrate are transferred to the substrate, performing proximity effect correction of each pattern element such that a transferred image obtains a dimension equal to a target dimension, comprising setting, based on a density of a pattern element in a peripheral region surrounding a pattern element of interest, a dimension of the pattern element whose transferred image formed under the density of the pattern element has a dimension equal to the target dimension as a reference value for the pattern element of interest, and calculating a dimension of transferred image of the pattern element of interest while changing around the reference value and determining the dimension of the pattern element of interest based on the calculation result.

Abstract: An endless belt-shaped transfer member of an electrophotographic image forming apparatus includes an elastic body layer and a surface layer formed on the elastic body layer. The transfer member has (i) an indentation depth of 400 nm or more and 1,500 nm or less with a load of 100 ?N applied to a surface of the transfer member with a Berkovich indenter and (ii) a hardness of 40° or more and 85° or less on the surface of the transfer member measured with a micro-rubber hardness tester.

Abstract: Superconducting wire material, superconducting wire material connection structure, superconducting wire material connection method, and treatment method of superconducting wire material end are shown. According to one implementation, a superconducting wire material connection structure includes, a first superconducting wire material, a second superconducting wire material, and a third superconducting wire material. The first superconducting wire material and the second superconducting wire material each include an end provided with a concave section in which at least a superconducting layer is removed and a filling section in which filling material is filled in the concave section. The first superconducting wire material and the second superconducting wire material are positioned so that the ends oppose to each other. A third superconducting wire material is connected to both the first superconducting wire material and the second superconducting wire material.

Abstract: A method for generating a pattern including patterns of cells having assist patterns arranged therein. The present invention provides a method for generating a pattern of a cell used when a mask pattern is generated by arranging cells selected from among a plurality of types of cells. The method includes generating a pattern including isolated rectangular pattern elements and an assist pattern as a cell pattern by obtaining data on a cell including the rectangular pattern elements and generating the assist pattern which assist resolution of the rectangular pattern elements in accordance with the data.

Abstract: In a method for generating, with a computer, a pattern of a mask, a pattern on an object plane of a projection optical system is set, shifted plural pupil functions are generated, a matrix containing the generated plural pupil functions is defined, an image of the pattern on the object plane is calculated by generating a vector obtained by transposing and complex-conjugating a vector containing, as components, values of the pupil functions at origin coordinates on a pupil plane from among components of the matrix, and performing convolution integral between the pattern on the object plane and a Fourier transform of a product of the vector and the matrix, an assist pattern for the pattern on the object plane is generated using the calculated image, and a pattern of the mask including the pattern on the object plane and the assist pattern is generated.

Abstract: Data regarding a first corrected patterns on a single cell corrected such that an evaluation value of a pattern formed on a substrate after an image of a pattern of the single cell is projected onto a resist on the substrate and the resist is developed is obtained for each of a plurality of cells, a first evaluation value obtained by evaluating a projected image of the first corrected pattern on the single cell generated by the projection system is obtained for each of the cells, a second evaluation value obtained by, when the cells are arranged adjacent to one another, evaluating the projected images of the first corrected patterns on the cells is calculated, and creating a second corrected pattern by correcting the first corrected patterns on the cells arranged adjacent to one another such that the second evaluation value becomes close to the first evaluation value.

Abstract: A transfer member having high durability while having an excellent transfer function is provided. An image formation apparatus in which high quality images can be obtained for an extended period of time is also provided. A transfer member having an endless belt shape and constituting an image formation apparatus of an electrophotographic system includes an elastic body layer and a surface layer formed thereon. The surface layer contains metal oxide fine particles subjected to a surface treatment, in a cured resin obtained by curing an active energy ray-curable composition that contains three ingredients of a multifunctional (meth)acrylate, a polyurethane acrylate and a polymerizable component having a low surface energy group.

Abstract: A method which determines patterns for a plurality of masks to be executed by a processor includes acquiring data on a pattern containing a plurality of pattern elements, and assigning the acquired plurality of pattern elements into masks, decomposing the acquired plurality of pattern elements into patterns of the masks, and calculating an evaluation value for an evaluation index, based on a number of masks, the distances between a plurality of pattern elements in each mask, and an angle of a line connecting a plurality of pattern elements in each mask. In the method, a pattern of each mask is determined based on the calculated evaluation value.

Abstract: Data regarding a first corrected patterns on a single cell corrected such that an evaluation value of a pattern formed on a substrate after an image of a pattern of the single cell is projected onto a resist on the substrate and the resist is developed is obtained for each of a plurality of cells, a first evaluation value obtained by evaluating a projected image of the first corrected pattern on the single cell generated by the projection system is obtained for each of the cells, a second evaluation value obtained by, when the cells are arranged adjacent to one another, evaluating the projected images of the first corrected patterns on the cells is calculated, and creating a second corrected pattern by correcting the first corrected patterns on the cells arranged adjacent to one another such that the second evaluation value becomes close to the first evaluation value.

Abstract: The present invention provides a pattern correction method of, when a plurality of pattern elements on a mask used to process a line pattern formed on a substrate are transferred to the substrate, performing proximity effect correction of each pattern element such that a transferred image obtains a dimension equal to a target dimension, comprising setting, based on a density of a pattern element in a peripheral region surrounding a pattern element of interest, a dimension of the pattern element whose transferred image formed under the density of the pattern element has a dimension equal to the target dimension as a reference value for the pattern element of interest, and calculating a dimension of transferred image of the pattern element of interest while changing around the reference value and determining the dimension of the pattern element of interest based on the calculation result.

Abstract: A voltage level generator circuit comprised of a fixed voltage generator unit for generating a first electrical current in a fixed quantity from a first supply voltage; a first current mirror circuit unit including a first thin-film NMOSFET and a second thin-film NMOSFET and that outputs a second electrical current proportional to the first electrical current; a protective circuit including: a third thin-film NMOSFET and a first thick-film PMOSFET utilized as a grounded gate for protecting the second thin-film NMOSFET, a first diode for preventing inverse current flow to the first supply, and a second diode for preventing the gate-source voltage of the third thin-film NMOSFET from reaching a negative electrical potential; and a second current mirror circuit for outputting a third electrical current proportional to the second electrical current; and a first Zener diode unit for generating a first fixed voltage from a third electrical current.

Abstract: A recording medium stores a program for causing a computer to execute a method of calculating a resist pattern.

Abstract: A recording medium in which a purchased image protected by a copyright or the like has been stored and a recording medium in which a user image has been stored is set, the purchased image as encrypted is decrypted and the images stored in both mediums are processed. The ID of a created image, user image data, link information representing encrypted purchased image data or the storage location of the purchased image data, and data specifying an image processing mode and the number of prints, are stored in a recording medium. In a DPE shop or the like, the purchased image data stored in the recording medium is decrypted, and the image processed by the user is reconstructed and printed in accordance with the data stored in the recording medium. A management center may give the allowance of use of the purchased image to the DPE shop, and the management center draws royalties from the accounts of individual DPE shops, sums the royalties and pays them into the accounts of individual proprietors of rights.