Abstract: The present disclosure provides a game device and/or the like that can adequately display a stereoscopic image that is easy to view. An acquirer specifies, for example, the object to collide with first on a line which extends from the current viewpoint in the line-of-sight direction, and acquires the depth position of that object. A setter sets the left and right virtual cameras arranged based on the current viewpoint. An image generator generates images photographed respectively from the left and right virtual cameras set. A synthesizer synthesizes a marker image in each game image based on the depth position of the object acquired by the acquirer. Then, a display controller controls the display of a stereoscopic image based on each game image in which the marker image is synthesized.

Abstract: A texture generator generates an image, for which mosaic processing has been performed on an acquired image, as a texture candidate. A color acquirer acquires a candidate symbol color. A performance parameter acquirer finds a performance parameter from the similarity between a candidate symbol color and a point symbol color. A performance parameter presenter presents the performance parameter that was found to a user. A confirmation instruction receiver receives a confirmation instruction from the user. A texture confirmer that, when a confirmation instruction is received, confirms the texture candidate as the texture to be applied to a character.

Abstract: Provided are a photoelectric conversion device (10) having a first conductivity type semiconductor (1), a first main surface (1a) of the first conductivity type semiconductor (1) being provided with a concave portion (26, 27) formed therein, the photoelectric conversion device (10) including: a second conductivity type semiconductor (3) formed in the first main surface (1a) of the first conductivity type semiconductor (1), an inner wall surface of a through-hole (19), and a second main surface (1a) of the first conductivity type semiconductor (1); a light-receiving surface electrode (5a, 5c) formed to fill the concave portion (26, 27) in the first main surface (1a) of the first conductivity type semiconductor (1); a first electrode (2) formed on the second main surface (1c) of the first conductivity type semiconductor (1); a through-hole electrode portion (9) formed inside the through-hole (19) to be in contact with the second conductivity type semiconductor (3) in the inner wall surface of the through-hole (