Abstract: From a plurality of medical images in time phases, a target site is extracted t least one medical image, a reference point is set on each of a target-site side, and a periphery side of the target site which are on across from each other over an outline of the extracted target site, and movement information for the reference points is calculated.

Abstract: The present invention pertains to: an oxidation color developable compound that is represented by general formula (1), that has excellent solubility in water, and that is less affected by a substance coexisting in a sample; and an oxidation color development reagent using the oxidation color developable compound. In general formula (I), R1, R2, R3, and R4 each represent a straight-chain or branched alkyl group having 1-6 carbon atoms, X represents a hydrophilic functional group, and L represents —(CH2)j— (j represents an integer of 2-10), —(CH2CH2O)k— (k represents an integer of 1-10), or —(CH2)m—Z—(CH2)n— (m and n each independently represent an integer of 1-10, and Z represents —N+(CH3)2—, —CONH—, —NHCO—, —COO—, —OCO—, —NHCOO—, —OCONH—, —NHCONH—, and —(CH2NHCO)q—).

Abstract: Disclosed is a pH-responsive fluorescent compound, represented by the general formula, which is a novel pH-responsive fluorescent compound capable of being specifically localized in mitochondria within cells, which exhibits strong fluorescence under weakly acidic pH environments in lysosomes, and which is not readily subject to interference from autofluorescence and background fluorescence due to other fluorescent substances within cells. Also disclosed are a composition for detecting mitophagy using the pH-responsive fluorescent compound, and a method for detecting mitophagy within cells. In the general formula, L represents a linker, X represents a pharmaceutically acceptable anion, and Y represents a reactive group that may react with a functional group on a mitochondrial protein to form a covalent bond.

Abstract: A battery assembly has excellent performance for sensing temperature by a temperature sensing element. The battery assembly includes a bus bar for electrically connecting the battery or cell units to each other by connecting electrode members provided with the battery or cell unit. The battery assembly further includes a bus bar extension portion extended from the bus bar. The bus-bar extension portion is disposed out of the area between the adjacent electrode members and provided with a temperature sensing or detection element that detects the temperature of the battery or cell unit.

Abstract: An information processing apparatus includes an acquisition unit that acquires, in a medical image, a first region and a second region different from the first region, a limiting unit that limits extracting a third region, connecting the first region and the second region, within a range including an extraction direction determined based on the first region; and an extraction unit that extracts the third region within the range limited by the limiting unit.

Abstract: From a plurality of medical images in time phases, a target site is extracted t least one medical image, a reference point is set on each of a target-site side, and a periphery side of the target site which are on across from each other over an outline of the extracted target site, and movement information for the reference points is calculated.

Abstract: An assistance apparatus for assisting creation of an interpretation report obtains a set of regions of interest, which are determined as regions that were observed, of medical image data of a subject that is displayed as an interpretation target, and a set of described regions, which are regions that correspond to description of an interpretation report about the medical image data of a subject. The assistance apparatus determines consistency between the set of regions of interest and the set of described regions, and lets a display unit display a result of the determination.

Abstract: A battery assembly has excellent performance for sensing temperature by a temperature sensing element. The battery assembly includes a bus bar for electrically connecting the battery or cell units to each other by connecting electrode members provided with the battery or cell unit. The battery assembly further includes a bus bar extension portion extended from the bus bar. The bus-bar extension portion is disposed out of the area between the adjacent electrode members and provided with a temperature sensing or detection element that detects the temperature of the battery or cell unit.

Abstract: An epitaxial substrate for electronic devices, in which current flows in a lateral direction and of which warpage configuration is properly controlled, and a method of producing the same. The epitaxial substrate for electronic devices is produced by forming a bonded substrate by bonding a low-resistance Si single crystal substrate and a high-resistance Si single crystal substrate together; forming a buffer as an insulating layer on a surface of the bonded substrate on the high-resistance Si single crystal substrate side; and producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate. The resistivity of the low-resistance Si single crystal substrate is 100 ?·cm or less, and the resistivity of the high-resistance Si single crystal substrate is 1000 ?·cm or more.

Abstract: A blasting cartridge includes a generally cylindrical blasting container, a blasting substance filled in the blasting container, a pair of leadwires contained in the blasting container, and a single thin metal wire connected to tip portions of the pair of leadwires. The leadwires and the thin metal wire are positioned within the blasting substance within the blasting container. The blasting substance is nitromethane, and the thin metal wire is formed of tungsten. With an electric discharge impact blasting apparatus, since the thin metal wire has a higher heating value than a copper wire because of its higher resistance and vaporizes at higher temperatures, it is possible to obtain a greater blasting force at lower voltages than with a blasting apparatus using a copper wire.

Abstract: To provide an epitaxial substrate for electronic devices, in which current flows in a lateral direction, which enables accurate measurement of the sheet resistance of HEMTs without contact, and to provide a method of efficiently producing the epitaxial substrate for electronic devices, the method characteristically includes the steps of forming a barrier layer against impurity diffusion on one surface of a high-resistance Si-single crystal substrate, forming a buffer as an insulating layer on the other surface of the high-resistance Si-single crystal substrate, producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate, and measuring resistance of the main laminate of the epitaxial substrate without contact.

Abstract: A blasting cartridge includes a generally cylindrical blasting container, a blasting substance filled in the blasting container, a pair of leadwires contained in the blasting container, and a single thin metal wire connected to tip portions of the pair of leadwires. The leadwires and the thin metal wire are positioned within the blasting substance within the blasting container. The blasting substance is nitromethane, and the thin metal wire is formed of tungsten. With an electric discharge impact blasting apparatus, since the thin metal wire has a higher heating value than a copper wire because of its higher resistance and vaporizes at higher temperatures, it is possible to obtain a greater blasting force at lower voltages than with a blasting apparatus using a copper wire.

Abstract: An epitaxial substrate for electronic devices is provided, which can improve vertical breakdown voltage and provides a method of producing the same. The epitaxial substrate includes a conductive SiC single crystal substrate, a buffer as an insulating layer on the SiC single crystal substrate, and a main laminate formed by epitaxially growing a plurality of Group III nitride layers on the buffer. Further, the buffer includes at least an initial growth layer in contact with the SiC single crystal substrate and a superlattice laminate having a superlattice multi-layer structure on the initial growth layer. The initial growth layer is made of a Ba1Alb1Gac1Ind1N material. Furthermore, the superlattice laminate is configured by alternately stacking a first layer made of a Ba2Alb2Gac2Ind2N material and a second layer made of a Ba3Alb3Gac3Ind3N material having a different band gap from the first layer.

Abstract: A semiconductor material is provided comprising: a composition graded layer, formed on a Si substrate or an interlayer formed thereon, comprising a composition of AlXGa1-XN graded such that a content ratio of Al in the composition decreases continuously or discontinuously in a crystal growing direction; a superlattice composite layer, formed on the composition graded layer, comprising a high Al-containing layer comprising a composition of AlYGa1-YN and a low Al-containing layer comprising a composition of AlZGa1-ZN that are laminated alternately; and a nitride semiconductor layer formed on the superlattice composite layer.

Abstract: A blasting cartridge includes a generally cylindrical blasting container, a blasting substance filled in the blasting container, a pair of leadwires contained in the blasting container, and a single thin metal wire connected to tip portions of the pair of leadwires. The leadwires and the thin metal wire are positioned within the blasting substance within the blasting container. The blasting substance is nitromethane, and the thin metal wire is formed of tungsten. With an electric discharge impact blasting apparatus, since the thin metal wire has a higher heating value than a copper wire because of its higher resistance and vaporizes at higher temperatures, it is possible to obtain a greater blasting force at lower voltages than with a blasting apparatus using a copper wire.

Abstract: To provide an epitaxial substrate for electronic devices, in which current flows in a lateral direction, which enables accurate measurement of the sheet resistance of HEMTs without contact, and to provide a method of efficiently producing the epitaxial substrate for electronic devices, the method characteristically includes the steps of forming a barrier layer against impurity diffusion on one surface of a high-resistance Si-single crystal substrate, forming a buffer as an insulating layer on the other surface of the high-resistance Si-single crystal substrate, producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate, and measuring resistance of the main laminate of the epitaxial substrate without contact.

Abstract: An epitaxial substrate for electronic devices, in which current flows in a lateral direction and of which warpage configuration is properly controlled, and a method of producing the same. The epitaxial substrate for electronic devices is produced by forming a bonded substrate by bonding a low-resistance Si single crystal substrate and a high-resistance Si single crystal substrate together; forming a buffer as an insulating layer on a surface of the bonded substrate on the high-resistance Si single crystal substrate side; and producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate. The resistivity of the low-resistance Si single crystal substrate is 100 ?·cm or less, and the resistivity of the high-resistance Si single crystal substrate is 1000 ?·cm or more.

Abstract: An epitaxial substrate for electronic devices is provided, which can improve vertical breakdown voltage and provides a method of producing the same. The epitaxial substrate includes a conductive SiC single crystal substrate, a buffer as an insulating layer on the SiC single crystal substrate, and a main laminate formed by epitaxially growing a plurality of Group III nitride layers on the buffer. Further, the buffer includes at least an initial growth layer in contact with the SiC single crystal substrate and a superlattice laminate having a superlattice multi-layer structure on the initial growth layer. The initial growth layer is made of a Ba1Alb1Gac1Ind1N material. Furthermore, the superlattice laminate is configured by alternately stacking a first layer made of a Ba2Alb2Gac2Ind2N material and a second layer made of a Ba3Alb3Gac3Ind3N material having a different band gap from the first layer.

Abstract: A novel vertical resonator type light emitting diode of which has a simplified structure of the reflector layer of its light emitting side an which is resistant to declination of its emission output power towards a high temperature range, has an active layer 5, and a first reflector layer 3 at its light reflecting side and a second reflector layer 9 at its light emitting side which are formed to sandwich the active later 5 between them, wherein each of the first reflector layer 3 and the second reflector layer 9 is structured to comprise a plurality of pairs of two alternate semiconductor layers formed which are different from each other in refractive index, and the second reflector layer 9 has a number of such pairs which is not less than 1/10 and not more than ? of that which said first reflector layer 3 has. The emission output power can be enhanced when the first reflector layer has a number of such pairs which is not less than 11 and not more than 41.