Abstract: Disclosed is a laser device including: a laser light source configured to emit laser light; a phase control unit configured to receive the laser light emitted from the laser light source, to control a spatial phase of a portion of the laser light, to emit the portion of the light as control light, and to emit another portion of the laser light as non-control light; a first optical system configured to irradiate an object with the control light emitted from the phase control unit; a detector configured to detect the non-control light emitted from the phase control unit; a second optical system configured to cause the non-control light emitted from the phase control unit to converge toward a detection surface of the detector.

Abstract: An image sensor includes a plurality of pixels. Each pixel includes a photoelectric conversion portion, a reset gate for controlling removal of a charge accumulated in the photoelectric conversion portion, a charge accumulation portion, an accumulation gate for controlling a transfer of the charge from the photoelectric conversion portion to the charge accumulation portion, and a readout gate for controlling readout of the charge from the charge accumulation portion. The reset gate removes the charge generated in the photoelectric conversion portion by excitation light. The accumulation gate transfers the charge generated in the photoelectric conversion portion by fluorescence to the charge accumulation portion. The readout gate performs control for reading out the charge after the charge transfer is performed n times. The number n of the charge transfers is set for each pixel.

Abstract: Provided is an optical sensor including: a charge generation region that generates charges in response to incident light; a charge collection region to which charges generated in the charge generation region are transferred; and at least one transfer gate electrode disposed on a transfer region between the charge generation region and the charge collection region. The charge generation region includes an avalanche multiplication region that causes avalanche multiplication, and a gradient potential energy formation region that forms gradient potential energy that is gradient so that potential energy becomes lower as approaching the transfer region in the charge generation region.

Abstract: A solid-state imaging device includes a semiconductor substrate having a main surface provided with a plurality of light sensitive regions and an insulating film provided on the main surface of the semiconductor substrate. A plurality of uneven portions are formed on a surface (main surface) on the side opposite to the main surface of the semiconductor substrate in the insulating film and a plurality of height differences of the uneven portions exist in the light sensitive region.

Abstract: An image sensor includes a plurality of pixels. Each pixel includes a photoelectric conversion portion, a reset gate for controlling removal of a charge accumulated in the photoelectric conversion portion, a charge accumulation portion, an accumulation gate for controlling a transfer of the charge from the photoelectric conversion portion to the charge accumulation portion, and a readout gate for controlling readout of the charge from the charge accumulation portion. The reset gate removes the charge generated in the photoelectric conversion portion by excitation light. The accumulation gate transfers the charge generated in the photoelectric conversion portion by fluorescence to the charge accumulation portion. The readout gate performs control for reading out the charge after the charge transfer is performed n times. The number n of the charge transfers is set for each pixel.

Abstract: A solid-state imaging device according to the disclosure includes a semiconductor substrate which has a main surface having a plurality of photosensitive regions, and an insulating film which is provided on the main surface of the semiconductor substrate. When the main surface of the semiconductor substrate is taken as a reference surface, a thickness of the insulating film from the reference surface is 0.5 ?m or more, a surface (a main surface) of the insulating film on the side opposite to the main surface is a surface having flatness, and a plurality of types of bottom surfaces of which depths from the reference surface are different from each other are provided on the main surface of the semiconductor substrate in the photosensitive regions.

Abstract: A solid-state imaging device is provided. The imaging device includes an imaging portion which includes light receiving portions and vertical transfer registers, a horizontal transfer portion, an output part for outputting an electrical signal converted from electric charges transferred from the horizontal transfer portion, a first reference potential applying means, and a second reference potential applying means. The imaging portion, the horizontal transfer portion and the output part are formed in a first conductivity type semiconductor substrate having a second conductivity type region, and a reference potential is applied to the second conductivity type semiconductor region. The first reference potential applying means applies a reference potential to the second conductivity type semiconductor region corresponding to an area where the output part is formed.

Abstract: A solid-state imaging device is provided. The imaging device includes an imaging portion which includes light receiving portions and vertical transfer registers, a horizontal transfer portion, an output part for outputting an electrical signal converted from electric charges transferred from the horizontal transfer portion, a first reference potential applying means, and a second reference potential applying means. The imaging portion, the horizontal transfer portion and the output part are formed in a first conductivity type semiconductor substrate having a second conductivity type region, and a reference potential is applied to the second conductivity type semiconductor region. The first reference potential applying means applies a reference potential to the second conductivity type semiconductor region corresponding to an area where the output part is formed.