Abstract: A packaging material film according to the present disclosure includes a first resin layer that contains a polyolefin resin and a porous filler. A ratio Y/X of an average particle size Y ?m of the porous filler to a thickness X ?m of the first resin layer is 0.02 to 3.5, and a content percentage of the porous filler in the first resin layer is 0.5 to 30 mass %. A packaging material according to the present disclosure includes a substrate and a packaging material film disposed on the substrate. In the packaging material, the packaging material film is formed of the above packaging material film, and a surface of the first resin layer of the packaging material film on a side opposite from the substrate is exposed.

Abstract: A talker prediction method obtains a voice from a plurality of talkers, records a conversation history of the plurality of talkers, identifies a talker of the obtained voice, and predicts a next talker among the plurality of talkers based on the identified talker and the conversation history.

Abstract: A nitride semiconductor device is provided, comprising: a first nitride semiconductor layer of a first conductivity-type; a second nitride semiconductor layer of a second conductivity-type provided above the first nitride semiconductor layer; a junction region of a first conductivity-type which is provided to extend in a direction from a front surface of the second nitride semiconductor layer to the first nitride semiconductor layer and has a doping concentration NJFET equal to or higher than that of the first nitride semiconductor layer; and a source region of a first conductivity-type which is provided more shallowly than the junction region and has a doping concentration equal to or higher than the doping concentration NJFET, wherein a dopant of the source region is an element with an atomic weight larger than that of a dopant in the junction region.

Abstract: A method for manufacturing a nitride semiconductor device includes: selectively ion-implanting an element that is other than p-type impurities and n-type impurities into a first region in a first primary surface of a gallium nitride layer so as to generate crystal defects in the first region; selectively ion-implanting a p-type impurity into a second region in the gallium nitride layer, the second region being shallower than the first region in a depth direction and being within the first region in a plan view; and thermally treating said gallium nitride layer that has been ion-implanted with said element and said p-type impurity so as to thermally diffuse said p-type impurity in the second region into a third region that is within the first region and that surrounds a bottom and sides of the second region.

Abstract: A resin composition, including a cellulose acylate (A), a polyester resin (B), and a cardanol composition (C) containing a cardanol-based compound having an epoxy group.

Abstract: A seat frame includes: a plate member; and a bar member joined to the plate member, the bar member including a planar portion on at least part of a side surface of the bar member, wherein the plate member and the bar member are joined to each other by a welded portion including a base portion configured to: extend in a longitudinal direction of the bar member; and have a central line positioned closer to a position at which a load from a user is applied upon use of the seat frame than a central portion of the bar member, the central portion being at a center of a length of the bar member, the length being orthogonal to the longitudinal direction of the bar member, the position being in an area of contact between the plate member and the planar portion.

Abstract: Provided is a carbon fiber composite material having an electromagnetic wave shielding property and an excellent impact resistance. The carbon fiber composite material has one or more carbon fiber layers and one or more carbon nanotube unwoven cloth layers, wherein at least one of the carbon fiber and carbon nanotube unwoven cloth layers in the carbon fiber composite material is impregnated with a heat-curable resin or has a heat-curable resin film laminated thereon.

Abstract: A resin composition, including a cellulose acylate (A), a polyester resin (B), and a cardanol composition (C) containing a cardanol-based compound having a hydroxyl group.

Abstract: A nitride semiconductor device including: a gallium nitride substrate; and a vertical MOSFET provided on the gallium nitride substrate, the vertical MOSFET including: an N-type drift region provided in the gallium nitride substrate; a P-type well region provided in the drift region; an N-type source region provided in the well region; a gate insulating film provided on a surface of the well region; and a gate electrode provided on the surface of the well region via the gate insulating film, wherein the well region includes a first well region and a second well region higher in acceptor element concentration than the first well region, the second well region being located between the first well region and the gate insulating film and being in contact with the source region.

Abstract: An impurity region of P-type that the field effect transistor of the nitride semiconductor device includes has a peak position at which concentration of P-type impurities reaches a maximum at a position located away from an interface with a gate insulating film. The impurity region has an inflection point at which concentration of the P-type impurities changes from increase to decrease toward the interface or a rate of decrease in the concentration of the P-type impurities increases toward the interface at a position located between the interface and the peak position.

Abstract: According to the present invention, there is provided a mobile-object-mounted display device (1, 1A) that is mounted on a mobile object (20) and performs display toward an outside of the mobile object (20), including one or a plurality of light emitting elements (3d) and a light emitting element support body (3e) that supports the one or plurality of light emitting elements (3d) along a surface having a three-dimensional shape.

Abstract: An audio signal processing method includes receiving an audio signal corresponding to a voice of a talker, obtaining an image of the talker, estimating position information of the talker using the image of the talker, generating, according to the estimated position information, a correction filter configured to compensate for an attenuation of the voice of the talker, performing filter processing on the audio signal using the generated correction filter, and outputting the audio signal on which the filter processing has been performed.

Abstract: A medicine administration tool configured for use in a transocular iontophoresis device for forming an electric circuit between a first electrode and a second electrode and supplying medicine to an eyeball, includes: a tubular member having a first lower end configured to face the eyeball; an inner member having a second lower end configured to face the eyeball, the inner member being accommodated in a space of the tubular member and forming a medicine accommodating chamber for accommodating the medicine between the inner member and the tubular member; and a support member movably supporting the inner member with respect to the tubular member.

Abstract: According to one embodiment, a semiconductor device includes a first chip, and a second chip bonded to the first chip. The first chip includes: a substrate; a transistor provided on the substrate; a plurality of first wirings provided above the transistor; and a plurality of first pads provided above the first wirings. The second chip includes: a plurality of second pads coupled to the plurality of first pads, respectively; a plurality of second wirings provided above the second pads; and a memory cell array provided above the second wirings. The first wiring, the first pad, the second pad, and the second wiring are coupled to one another in series to form a first pattern.

Abstract: A control apparatus includes a control unit configured to control an imaging range of an imaging unit to track a tracking target, and a setting unit configured to set a search area based on a range set by a user, a user operation for controlling the imaging range, or a past position of the tracking target, wherein the control unit controls the imaging range to search for the tracking target in the search area in a case where tracking of the tracking target has failed.

Abstract: In a relay device, a transmitting/receiving unit of an ECU relay receives data. A first counter value is incremented if an amount of data received by the transmitting/receiving unit per unit time exceeds a first threshold. A second counter value is incremented if the amount of data received by the transmitting/receiving unit per unit time exceeds a second threshold. The second threshold is greater than the first threshold. A control unit of a bus relay repeatedly monitors the first counter value. If the first counter value is incremented, the control unit shortens a cycle with which the second counter value is monitored.

Abstract: A method for manufacturing a packaging body according to the present disclosure includes the steps of: (A) preparing a packaging material that includes an innermost layer containing a resin composition containing a polypropylene resin and a filler dispersed in the resin composition, a ratio Y/X of an average particle diameter Y ?m of the filler to a thickness X ?m of the innermost layer being 0.02 to 3.5; (B) producing a packaging body that has the packaging material and an oil-in-water dispersion-type content hermetically housed by the packaging material; and (C) subjecting the packaging body to a heating treatment so as to absorb oil contained in the content into the innermost layer.

Abstract: An image capturing control apparatus includes a processor and a memory storing executable instructions which, when executed by the processor, cause the image capturing apparatus to perform operations including detecting coordinates indicating each of a plurality of parts of an object from an image captured by an image capturing unit, correcting the detected coordinates to corrected coordinates for each of the plurality of parts calculated based on a preset magnification and relative position, generating a tracking coordinate based on a plurality of the corrected coordinates each indicating different parts of the object and a distance of the plurality of the corrected coordinates, the distance being within a threshold, and controlling an image capturing range of the image capturing unit based on the generated tracking coordinates.

Abstract: An imaging control apparatus detects a gesture of a person in an image and motion information of the gesture. The imaging control apparatus firstly determines whether the detected gesture is a gesture requiring an angle-of-view change. In a case where the detected gesture is the gesture requiring an angle-of-view change, the imaging control apparatus secondly determines whether a time elapsed since the last time a gesture requiring an angle-of-view change is made is within a predetermined time. The imaging control apparatus generates a pan operation command to change an angle of view based on the second determination result.

Abstract: A method for manufacturing a nitride semiconductor device including: forming an N-type region in a nitride semiconductor layer; implanting ions of an acceptor element into a region under the N-type region in the nitride semiconductor layer; and forming a first P-type region under the N-type region by subjecting the nitride semiconductor layer to heat treatment and activating the acceptor element. The forming the N-type region includes implanting ions of a donor element into the nitride semiconductor layer such that concentration of the donor element in the N-type region is equal to or greater than concentration of the acceptor element in the first P-type region. The implanting ions of the acceptor element into a region under the N-type region includes implanting ions of the acceptor element such that concentration of the acceptor element in the first P-type region is 1×1019 cm?3 or more and 1×1021 cm?3 or less.