Abstract: A magnetic resonance imaging apparatus includes sequence controlling circuitry configured: to obtain, during a time period after excitation of a first nuclide in a hyperpolarized state but no later than before obtainment of a first magnetic resonance signal from the first nuclide, a second magnetic resonance signal from a second nuclide that is different from the first nuclide and is in a non-hyperpolarized state, by exciting the second nuclide; and to control each of gradient magnetic field waveforms so as to cause both a first sum indicating a sum of application amounts of a gradient magnetic field related to the excitation of the second nuclide and a second sum indicating a sum of application amounts of a gradient magnetic field related to the obtainment of the second magnetic resonance signal to be close to zero, no later than before the obtainment of the first magnetic resonance signal.

Abstract: A semiconductor device and an imaging apparatus capable of suppressing short-channel effects are provided. The semiconductor device includes a semiconductor substrate and a transistor provided on the semiconductor substrate. The transistor includes a semiconductor region having a main surface and a first side surface intersecting the main surface, a gate insulating film provided on the semiconductor region, a gate electrode provided on the gate insulating film, a channel region covered with the gate insulating film and the gate electrode in the semiconductor region, and first-conductivity-type source and drain regions adjacent to the channel region. In a planar view from the normal direction of the main surface, the semiconductor region includes a first portion extended in a first direction, and a second portion extended from the first portion in a second direction intersecting the first direction.

Abstract: A magnetic resonance imaging apparatus according to an embodiment includes processing circuitry configured, on a basis of one or both of (A) a parameter related to applying one of inversion and flip pulses and (B) an intensity of a slice selecting gradient magnetic field applied together with the one of the pulses in relation to selecting a slice to which the one of the pulses is applied, to determine one or both of (A) a parameter related to applying the other of the inversion and (B) flip pulses; and an intensity of the slice selecting gradient magnetic field applied together with the other of the pulses in relation to selecting a slice to which the other of the pulses is applied.

Abstract: A magnetic resonance imaging apparatus according to an embodiment includes processing circuitry configured, on a basis of one or both of (A) a parameter related to applying one of inversion and flip pulses and (B) an intensity of a slice selecting gradient magnetic field applied together with the one of the pulses in relation to selecting a slice to which the one of the pulses is applied, to determine one or both of (A) a parameter related to applying the other of the inversion and (B) flip pulses; and an intensity of the slice selecting gradient magnetic field applied together with the other of the pulses in relation to selecting a slice to which the other of the pulses is applied.

Abstract: An embodiment of a silicon carbide semiconductor device includes one or more inner cells each having a MOSFET and one or more outer peripheral cells that does not have a MOSFET structure, and the area (surface area) of the p+ contact region of each of the outermost peripheral cells is less than the surface area of an p+ contact region of each of the inner cells, for example, so that a unit total resistance of p+ contact regions of the outermost peripheral cells, as measured in a depth direction of the semiconductor substrate with respect to a unit area in a surface of the semiconductor substrate, is greater than a unit total resistance of the p+ contact regions of the inner cells, as measured in the depth direction of the semiconductor substrate with respect to the unit area in the surface of the semiconductor substrate.

Abstract: An embodiment of a silicon carbide semiconductor device includes one or more inner cells each having a MOSFET and one or more outer peripheral cells that does not have a MOSFET structure, and the area (surface area) of the p+ contact region of each of the outermost peripheral cells is less than the surface area of an p+ contact region of each of the inner cells, for example, so that a unit total resistance of p+ contact regions of the outermost peripheral cells, as measured in a depth direction of the semiconductor substrate with respect to a unit area in a surface of the semiconductor substrate, is greater than a unit total resistance of the p+ contact regions of the inner cells, as measured in the depth direction of the semiconductor substrate with respect to the unit area in the surface of the semiconductor substrate.

Abstract: The semiconductor device includes a switching arm unit in which first and second wide bandgap semiconductor elements, each having a body diode, are connected in series between a positive line and a negative line; a current detecting unit that detects a current in at least a wide bandgap semiconductor element in which a flyback current flows; and a semiconductor element driving unit that drives the first and second wide bandgap semiconductor elements. When driving one of the wide bandgap semiconductor elements, the semiconductor element driving unit determines, by referring to a fault inhibiting characteristic curve, whether a flyback current detection value of the other wide bandgap semiconductor elements falls within a fault growth region or a fault inhibiting region, and when a result of the determination indicates that the flyback current detection value is within the fault growth region, inhibits a current flowing in the one wide bandgap semiconductor element.

Abstract: The semiconductor device includes a switching arm unit in which first and second wide bandgap semiconductor elements, each having a body diode, are connected in series between a positive line and a negative line; a current detecting unit that detects a current in at least a wide bandgap semiconductor element in which a flyback current flows; and a semiconductor element driving unit that drives the first and second wide bandgap semiconductor elements. When driving one of the wide bandgap semiconductor elements, the semiconductor element driving unit determines, by referring to a fault inhibiting characteristic curve, whether a flyback current detection value of the other wide bandgap semiconductor elements falls within a fault growth region or a fault inhibiting region, and when a result of the determination indicates that the flyback current detection value is within the fault growth region, inhibits a current flowing in the one wide bandgap semiconductor element.