Abstract: An acquisition unit acquires specification information about a robot that is a component of a robot cell system, member information including shape information about a member, other than the robot, which is also a component of the robot cell system, and work information relating to work to be performed by the robot. A layout planning unit calculates, based on the specification information, the member information, and the work information, one or more layout candidates for the robot and the member in the robot cell system. A pose planning unit calculates, for each layout candidate, a set of combinations of a start pose at a start point and an end pose at an end point of each operation of the robot. A route planning unit calculates, for each layout candidate, a set of routes from the start pose to the end pose of each combination of the start pose and the end pose.

Abstract: An acquisition unit (32) acquires work information related to work to be performed by a robot having a hand part, grasping information indicating a plurality of candidates for the relative positional relationship between the hand part and a workpiece, workpiece posture information indicating a plurality of candidates for a posture adoptable by the workpiece, and kinematics information regarding the robot. A generation unit (34) generates, for a plurality of target points on a path of the robot for performing the work, a graph (38) which includes a node corresponding to each combination of the workpiece posture information, the posture of the hand part grasping the workpiece, and the posture of the robot, and an edge connecting nodes corresponding to combinations that are transitionable between target points, and in which an estimated operation time corresponding to the transition between the nodes connected by the edge is given to the edge as a weight.

Abstract: A semiconductor device using one or more guard rings includes a p-type guard ring region surrounding a pn junction region, an insulating film covering the p-type guard ring region, one or more conductive films electrically connected with the p-type guard ring region through one or more contact holes made in the insulating film, and a semi-insulating film covering the insulating film and the conductive films. Thus, a desired breakdown voltage characteristic can be ensured even if a foreign matter or the like adheres to a surface of the conductive films.

Abstract: A method of manufacturing a power semiconductor device according to the present invention includes the steps of: (a) forming a silicon nitride film on a semiconductor substrate; (b) after the step (a), forming a ring-shaped trench along a peripheral portion of the semiconductor substrate 6; (c) forming a first silicon oxide film on an inner surface of the trench; (d) after the step (c), forming a second silicon oxide film on an entire surface of the semiconductor substrate to bury the trench; (e) planarizing the second silicon oxide film by using the silicon nitride film as a stopper; and (f) forming a third silicon oxide film in a region in which the silicon nitride film is removed.

Abstract: A passivation film having a predetermined width from an outer peripheral end portion toward an inner side and extending along the outer peripheral end portion is formed on a front surface of a semiconductor substrate. An outer peripheral end surface orthogonal to the front surface and a rear surface is formed by grinding the outer peripheral end portion of the semiconductor substrate. A thickness of the semiconductor substrate is reduced to a predetermined thickness by grinding the rear surface. The ground rear surface is etched by discharging a mixed acid onto the rear surface while rotating the semiconductor substrate with the rear surface facing upward, to remove a fracture layer. Thereby, chipping or cracking of the semiconductor substrate is suppressed.

Abstract: A method of manufacturing a power semiconductor device according to the present invention includes the steps of: (a) forming a silicon nitride film on a semiconductor substrate; (b) after the step (a), forming a ring-shaped trench along a peripheral portion of the semiconductor substrate 6; (c) forming a first silicon oxide film on an inner surface of the trench; (d) after the step (c), forming a second silicon oxide film on an entire surface of the semiconductor substrate to bury the trench; (e) planarizing the second silicon oxide film by using the silicon nitride film as a stopper; and (f) forming a third silicon oxide film in a region in which the silicon nitride film is removed.

Abstract: A passivation film having a predetermined width from an outer peripheral end portion toward an inner side and extending along the outer peripheral end portion is formed on a front surface of a semiconductor substrate. An outer peripheral end surface orthogonal to the front surface and a rear surface is formed by grinding the outer peripheral end portion of the semiconductor substrate. A thickness of the semiconductor substrate is reduced to a predetermined thickness by grinding the rear surface. The ground rear surface is etched by discharging a mixed acid onto the rear surface while rotating the semiconductor substrate with the rear surface facing upward, to remove a fracture layer. Thereby, chipping or cracking of the semiconductor substrate is suppressed.

Abstract: A semiconductor device using one or more guard rings includes a p-type guard ring region surrounding a pn junction region, an insulating film covering the p-type guard ring region, one or more conductive films electrically connected with the p-type guard ring region through one or more contact holes made in the insulating film, and a semi-insulating film covering the insulating film and the conductive films. Thus, a desired breakdown voltage characteristic can be ensured even if a foreign matter or the like adheres to a surface of the conductive films.

Abstract: A portable electrocardiograph capable of providing a low electricity consumption rate by controlling an electric power supply from a power supply device, the portable electrocardiograph includes a unit for detecting electrocardiographic signals and for converting the electrocardiographic signals into electrocardiographic complex data, a unit connected with the detecting unit for displaying the electrocardiographic complex data, and a unit for controlling an electric power supply for either the detecting unit or the displaying unit in accordance with a predetermined mode so that the electric power supply from the power supply device is continued during a predetermined time period.

Abstract: A segment arrangement suitable for a Celsius and Fahrenheit clinical thermometer comprises two upper digit displays and two lower digit displays. The upper digit displays can merely display four figures "3", "4", "9", and "10". The lower digit displays can display "00" through "99" figures, so as to display 35.0-42.0 degrees Centigrade and 96.8-105.8 degrees Fahrenheit. The two upper digit displays have such a specific configuration that a first digit display is provided which comprises a vertical major segment and a second digit display is provided which comprises two vertical minor segments, three horizontal segments, and one vertical major segment. The vertical major segment of the first digit display is electrically coupled to one of the two vertical minor segments.

Abstract: A display electrode arrangement for an electronic clinical thermometer includes two groups of segment electrodes and two groups of common electrodes, and a driving circuit for selectively driving segment signals and common signals. Each of the two groups of segment electrodes and common electrodes is operated to display only a "3" or a "4" in the Centigrade degrees, and a "9" or a "10" for the Fahrenheit degrees. Those numerals may be displayed by combining the displayed portions.

Abstract: A process for recovery of iodine from waste containing iodine or iodine compound, comprising the steps of burning the waste in a cumbustion chamber, and scrubbing out the iodine or iodine compound in the resulting combustion gas with a basic aqueous solution of sodium thiosulfate.