Abstract: Convenience of an ink bottle and a bottle set is improved. An ink bottle includes: a container portion that contains ink; a guiding portion that is formed in one end portion of the container portion, and includes an outflow port from which the ink in the container portion flow out; and a cover that covers at least an end portion of the container portion on the opposite side of the guiding portion.

Abstract: A foreign matter detecting apparatus includes an oscillating unit, an optical system, a receiving unit, a scanning mechanism, and an operator. The oscillating unit generates a terahertz pulse wave and emits the terahertz pulse wave as irradiation light. The optical system guides the irradiation light to the first part of the container and condenses reflected light from the container. The receiving unit outputs a signal corresponding to the condensed reflected light and also measures an echo. The scanning mechanism scans a position of the irradiation light guided on the first part in a two-dimensional manner. The operator detects foreign matter in powder in a container based on at least one of a time waveform signal, a reflection image, a power spectrum, a tomographic image, and a frequency image. The time waveform signal is output from the receiving unit in chronological order.

Abstract: A foreign matter detecting apparatus includes an oscillating unit, an optical system, a receiving unit, a scanning mechanism, and an operator. The oscillating unit generates a terahertz pulse wave and emits the terahertz pulse wave as irradiation light. The optical system guides the irradiation light to the first part of the container and condenses reflected light from the container. The receiving unit outputs a signal corresponding to the condensed reflected light and also measures an echo. The scanning mechanism scans a position of the irradiation light guided on the first part in a two-dimensional manner. The operator detects foreign matter in powder in a container based on at least one of a time waveform signal, a reflection image, a power spectrum, a tomographic image, and a frequency image. The time waveform signal is output from the receiving unit in chronological order.

Abstract: A measuring method for measuring characteristics of an object to be measured, the measuring method including holding the object on a void-arranged structure having at least two void portions that pass therethrough in a direction perpendicular to a principal surface thereof, and applying electromagnetic waves to the void-arranged structure on which the object is held to detect frequency characteristics of the electromagnetic waves transmitted through the void-arranged structure. The void-arranged structure has a grid structure in which the void portions are periodically arranged in at least one direction on the principal surface of the void-arranged structure. The characteristics of the object are measured on the basis of a relationship between a first frequency characteristic and a second frequency characteristic.

Abstract: A semiconductor impurity concentration testing apparatus includes a terahertz pulse light source that irradiates terahertz pulse light on a semiconductor material, a light detector that detects transmitted pulse light having been transmitted through the semiconductor material, a measurement device that ascertains a spectral transmittance based upon a time-series waveform of the electric field intensity of the transmitted pulse light and an arithmetic operation unit that calculates an impurity concentration in the semiconductor material based upon the spectral transmittance. By adopting such a structure, it becomes possible to measure and test the impurity concentration over the entire semiconductor material in a simple manner and to reproduce an image of the impurity distribution.

Abstract: A semiconductor impurity concentration testing apparatus comprises a terahertz pulse light source that irradiates terahertz pulse light on a semiconductor material, a light detector that detects transmitted pulse light having been transmitted through the semiconductor material, a measurement device that ascertains a spectral transmittance based upon a time-series waveform of the electric field intensity of the transmitted pulse light and an arithmetic operation unit that calculates an impurity concentration in the semiconductor material based upon the spectral transmittance. By adopting such a structure, it becomes possible to measure and test the impurity concentration over the entire semiconductor material in a simple manner and to reproduce an image of the impurity distribution.

Abstract: An electrical characteristics evaluation apparatus comprises a terahertz pulse light source that irradiates terahertz pulse light onto a semiconductor material, a light detector that detects pulse light having been transmitted through or having been reflected by the semiconductor material, a measurement device that obtains a spectral transmittance or a spectral reflectance by using a time-series waveform of the electric field intensity of the transmitted pulse light or the reflected pulse light and an arithmetic operation unit that calculates an electrical characteristics parameter of the semiconductor material based upon the spectral transmittance or the spectral reflectance. By adopting this electrical characteristics evaluation apparatus and the corresponding electrical characteristics evaluation method, the electrical material quantities (such as the carrier density, the mobility, the resistivity and the electrical conductivity) of the measurement target, i.e.

Abstract: A functional film at least one surface of which has at least one of characteristics that (1) the surface has an unevenness that its surface roughness is from 10 A to 500 A as RMS value; (2) the surface has an unevenness whose pitch has an average value not larger than the RMS value of surface roughness; and (3) the surface comprises an oxide of an inorganic element (represented by M), and the value of [number of carbon atoms]/[number of M atoms] at the surface is 0.1 or less; an article having such a film; and processes for producing these are provided in the present invention.

Abstract: An apparatus for measuring the thickness of a semiconductor layer includes a light source emitting light; an interferometer producing modulated interference light by modulating the light from the light source; an optical system including a light transmission member for introducing the modulated interference light into a measurement sample including at least one film on a substrate; a light detecting element for detecting the modulated interference light reflected from the film and producing an output signal in response; an extracting element for extracting a film interference component having a waveform from the output signal; and an element for calculating the thickness of the film from the waveform of the output signal component. The light detecting element includes a plurality of photodetectors having respective photometric wavenumber ranges that overlap.