Abstract: A multi-electron beam inspection apparatus includes a multi-detector that includes a plurality of detection sensors each of which detects a secondary electron beam emitted due to that a target object is irradiated with a primary electron beam individually preset in multiple secondary electron beams emitted because the target object is irradiated with multiple primary electron beams, a reference image data generation circuit that generates reference image data of a position irradiated with each primary electron beam, based on design data serving as a basis of the pattern formed on the target object, a synthesis circuit that synthesizes, for each primary electron beam, the reference image data of the position irradiated with a primary electron beam concerned and portions of reference image data of positions irradiated with other primary electron beams different from the primary electron beam concerned, and a comparison circuit that compares synthetic reference image data having been synthesized, and secondary e

Abstract: A pattern inspection apparatus includes an illumination optical system to illuminate an inspection substrate on which a pattern is formed, an offset calculation circuit to calculate an offset amount which depends on an image accumulation time of each of a plurality of photo sensor elements arrayed two-dimensionally, a time delay integration (TDI) sensor to include the plurality of photo sensor elements, to acquire an image of the inspection substrate by receiving a transmitted light or a reflected light from the inspection substrate by the plurality of photo sensor elements, to correct, using the offset amount, a pixel value of optical image data of an acquired image, and to output the optical image data having been corrected, and a comparison circuit to compare an optical image formed by the optical image data output from the TDI sensor with a reference image.

Abstract: According to an embodiment, a defect inspection method is performed with a defect inspection apparatus. The defect inspection apparatus is adapted to irradiate a first sample with illumination light to acquire a first sample image, and compare the first sample image to a reference image to inspect a defect. The defect inspection method includes generating the reference image, acquiring the first sample image, setting a defect detection condition using an index based on a result of defect inspection of a second sample different from the first sample, and discriminating a nuisance from a result of comparison between the reference image and the first sample image based on the defect detection condition.

Abstract: There is provided an inspection method including acquiring an inspection image by irradiating a sample with a plurality of electron beams and by simultaneously scanning the sample by the electron beams, performing first correction of a reference image corresponding to the inspection image or second correction of the inspection image based on a plurality of distortions of each of the electron beams and on a position scanned by each of the electron beams in the inspection image, and performing first comparison of the reference image subjected to the first correction with the inspection image or second comparison of the reference image with the inspection image subjected to the second correction.

Abstract: According to one embodiment, an inspection device includes: an image generation device configured to generate a second image corresponding to a first image; and a defect detection device configured to estimate a nonlinear shift based on a plurality of partial region sets, each of the partial region sets including a first partial region in the first image and a second partial region in the second image corresponding to the first partial region, and detect a defect in the second image from the first image.

Abstract: Provided is a pattern inspection method including: irradiating a substrate with an electron beam, a pattern being formed on the substrate; acquiring an inspection image as a secondary electron image of the pattern; setting a pixel value equal to or less than a first threshold value minus a half of a predetermined detection width of the inspection image and a pixel value equal to or more than the first threshold value plus a half of the predetermined detection width of the inspection image to unprocessed; acquiring a difference image between the inspection image having the pixel value having less than the first threshold value minus the half of the predetermined detection width and the pixel value having more of the first threshold value plus the half of the predetermined detection width being set to unprocessed and a reference image of the inspection image; and performing inspection on the basis of the difference image.

Abstract: According to one aspect of the present invention, a multiple electron beam inspection apparatus includes a reference image generation circuit generating reference images corresponding to the secondary electron images, in accordance with an image generation characteristic of a secondary electron image by irradiation of one beam; and a correction circuit generating corrected reference images in which, on the basis of deviation information between a figure pattern of the secondary electron image by irradiation of the one beam of the multiple primary electron beams and a figure pattern of a secondary electron image by irradiation of another beam different from the one beam of the multiple primary electron beams, a shape of a figure pattern of a reference image corresponding to the figure pattern of the secondary electron image by the irradiation of the another beam in the reference images is corrected.

Abstract: According to one aspect of the present invention, a pattern inspection apparatus includes: a first sub-pixel interpolation processing circuitry configured to calculate a pixel value of a reference image corresponding to a position of each pixel of the inspection target image by performing an interpolation process using at least one pixel value of the reference image for each shift amount while variably and relatively shifting the inspection target image and the reference image by the unit of a sub-pixel using the reference image corresponding to the inspection target image; and an SSD calculation processing circuitry configured to calculate a sum of squared difference between each pixel value of the inspection target image and a corresponding pixel value of the reference image subjected to a filter process for the each shift amount.

Abstract: An electron beam inspection apparatus includes an acquisition processing circuitry to acquire surface material information presenting a surface material of the substrate and a value of an acceleration voltage of an electron beam; a sequence determination processing circuitry to determine a scan sequence of a plurality of stripe regions on the basis of the surface material of the substrate and the value of the acceleration voltage, the plurality of stripe regions obtained by virtually dividing an inspection region of the substrate in a stripe shape; a secondary electron image acquisition mechanism including a detector for detecting a secondary electron and configured to scan the plurality of stripe regions of the substrate according to a determined scan sequence and to acquire a secondary electron image of the substrate; and a comparison processing circuitry to compare the secondary electron image with a corresponding reference image.

Abstract: An electron beam inspection apparatus according to an embodiment includes a stage holding a substrate with a pattern; an electron beam column irradiating the substrate with multiple beams including a plurality of electron beams such that adjacent regions irradiated with the electron beams have an overlap portion therebetween; a first image storage unit storing a first inspection image acquired by irradiating a first inspection region of the substrate with the multiple beams; a second image storage unit storing a second inspection image acquired by irradiating a second inspection region of the substrate with the multiple beams; a correction coefficient storage unit storing a correction coefficient for correcting an image of the overlap portion; an image correction unit correcting an image of the overlap portion using the correction coefficient; and a comparison unit comparing the first inspection image with the second inspection image.

Abstract: According to one aspect of the present invention, a multiple electron beam inspection apparatus includes a reference image generation circuit generating reference images corresponding to the secondary electron images, in accordance with an image generation characteristic of a secondary electron image by irradiation of one beam; and a correction circuit generating corrected reference images in which, on the basis of deviation information between a figure pattern of the secondary electron image by irradiation of the one beam of the multiple primary electron beams and a figure pattern of a secondary electron image by irradiation of another beam different from the one beam of the multiple primary electron beams, a shape of a figure pattern of a reference image corresponding to the figure pattern of the secondary electron image by the irradiation of the another beam in the reference images is corrected.

Abstract: An electron beam inspection apparatus according to an embodiment includes a stage holding a substrate with a pattern; an electron beam column irradiating the substrate with multiple beams including a plurality of electron beams such that adjacent regions irradiated with the electron beams have an overlap portion therebetween; a first image storage unit storing a first inspection image acquired by irradiating a first inspection region of the substrate with the multiple beams; a second image storage unit storing a second inspection image acquired by irradiating a second inspection region of the substrate with the multiple beams; a correction coefficient storage unit storing a correction coefficient for correcting an image of the overlap portion; an image correction unit correcting an image of the overlap portion using the correction coefficient; and a comparison unit comparing the first inspection image with the second inspection image.

Abstract: According to one aspect of the present invention, a pattern inspection apparatus includes an inspected image acquisition mechanism configured to acquire an inspected image of a figure pattern formed on an inspection target object, using an electron beam; a reference image generation processing circuit configured to generate a reference image corresponding to the inspected image; a contour data generation processing circuit configured to generate contour data defining a contour line of the figure pattern; a comparison processing circuit configured to compare the inspected image and the reference image and determine whether there is a defect based on a result of a comparison; and a defect selection processing circuit configured to select a defect within a range preset based on the contour line as a valid defect, from at least one defect determined to be a defect by the comparison, using the contour data.

Abstract: An electron beam inspection apparatus includes an acquisition processing circuitry to acquire surface material information presenting a surface material of the substrate and a value of an acceleration voltage of an electron beam; a sequence determination processing circuitry to determine a scan sequence of a plurality of stripe regions on the basis of the surface material of the substrate and the value of the acceleration voltage, the plurality of stripe regions obtained by virtually dividing an inspection region of the substrate in a stripe shape; a secondary electron image acquisition mechanism including a detector for detecting a secondary electron and configured to scan the plurality of stripe regions of the substrate according to a determined scan sequence and to acquire a secondary electron image of the substrate; and a comparison processing circuitry to compare the secondary electron image with a corresponding reference image.

Abstract: According to one embodiment, an inspection device includes: an image generation device configured to generate a second image corresponding to a first image; and a defect detection device configured to estimate a nonlinear shift based on a plurality of partial region sets, each of the partial region sets including a first partial region in the first image and a second partial region in the second image corresponding to the first partial region, and detect a defect in the second image from the first image.

Abstract: Provided is a pattern inspection method including: irradiating a substrate with an electron beam, a pattern being formed on the substrate; acquiring an inspection image as a secondary electron image of the pattern; setting a pixel value equal to or less than a first threshold value minus a half of a predetermined detection width of the inspection image and a pixel value equal to or more than the first threshold value plus a half of the predetermined detection width of the inspection image to unprocessed; acquiring a difference image between the inspection image having the pixel value having less than the first threshold value minus the half of the predetermined detection width and the pixel value having more of the first threshold value plus the half of the predetermined detection width being set to unprocessed and a reference image of the inspection image; and performing inspection on the basis of the difference image.

Abstract: There is provided an inspection method including acquiring an inspection image by irradiating a sample with a plurality of electron beams and by simultaneously scanning the sample by the electron beams, performing first correction of a reference image corresponding to the inspection image or second correction of the inspection image based on a plurality of distortions of each of the electron beams and on a position scanned by each of the electron beams in the inspection image, and performing first comparison of the reference image subjected to the first correction with the inspection image or second comparison of the reference image with the inspection image subjected to the second correction.

Abstract: According to one aspect of the present invention, a pattern inspection apparatus includes: a first sub-pixel interpolation processing circuitry configured to calculate a pixel value of a reference image corresponding to a position of each pixel of the inspection target image by performing an interpolation process using at least one pixel value of the reference image for each shift amount while variably and relatively shifting the inspection target image and the reference image by the unit of a sub-pixel using the reference image corresponding to the inspection target image; and an SSD calculation processing circuitry configured to calculate a sum of squared difference between each pixel value of the inspection target image and a corresponding pixel value of the reference image subjected to a filter process for the each shift amount.

Abstract: According to one embodiment, a management method of a defect inspection apparatus, includes generating, with respect to a plurality of measurement points of a measurement target, difference values between signals obtained from an image of the measurement target and signals obtained from a reference image, generating a frequency distribution of the difference values, and determining whether the frequency distribution satisfies a predetermined condition.

Abstract: According to one embodiment, an image acquisition apparatus includes an electron beam source configured to generate an electron beam to be radiated onto an object to be measured, an image detecting unit configured to detect an electronic image of the object based on the electron beam radiated from the electron beam source onto the object, and a voltage modulating unit configured to modulate at least one of a voltage to be applied to the electron beam source and a voltage to be applied to the object.