Abstract: An acquisition unit acquires specification information about a robot that is a component of a robot cell system, member information including shape information about a member, other than the robot, which is also a component of the robot cell system, and work information relating to work to be performed by the robot. A layout planning unit calculates, based on the specification information, the member information, and the work information, one or more layout candidates for the robot and the member in the robot cell system. A pose planning unit calculates, for each layout candidate, a set of combinations of a start pose at a start point and an end pose at an end point of each operation of the robot. A route planning unit calculates, for each layout candidate, a set of routes from the start pose to the end pose of each combination of the start pose and the end pose.

Abstract: An acquisition unit (32) acquires work information related to work to be performed by a robot having a hand part, grasping information indicating a plurality of candidates for the relative positional relationship between the hand part and a workpiece, workpiece posture information indicating a plurality of candidates for a posture adoptable by the workpiece, and kinematics information regarding the robot. A generation unit (34) generates, for a plurality of target points on a path of the robot for performing the work, a graph (38) which includes a node corresponding to each combination of the workpiece posture information, the posture of the hand part grasping the workpiece, and the posture of the robot, and an edge connecting nodes corresponding to combinations that are transitionable between target points, and in which an estimated operation time corresponding to the transition between the nodes connected by the edge is given to the edge as a weight.

Abstract: The present disclosure provides an acquisition unit acquiring an installation position, which serves as a point of origin within a range in which each of a plurality of robots can move, a start position, which is a prescribed location of each of the plurality of robots when in a starting posture, and an end position, which is a prescribed location when in a final posture, and an evaluation unit evaluates, for each of the plurality of robots, the risk of interference between the plurality of robots on the basis of overlap between polyhedra defined on the basis of polygons that include the installation position, the start position and the end position.

Abstract: A process for producing aromatic hydrocarbons and hydrogen, in which a lower hydrocarbons-containing feedstock gas is reformed by being supplied to and being brought into contact with a catalyst under high temperature conditions thereby forming aromatic hydrocarbons and hydrogen. The method includes the steps of (a) supplying a hydrogen gas together with the feedstock gas during a supply of the feedstock gas; and (b) suspending the supply of the feedstock gas for a certain period of time while keeping a condition of a supply of the hydrogen gas. The catalyst is exemplified by a metallo-silicate carrying molybdenum and a metallo-silicate carrying molybdenum and rhodium. An amount of the hydrogen gas supplied together with the feedstock gas is set to be preferably larger than 2% and smaller than 10%, more preferably within a range of from 4 to 8%, much more preferably 8%.

Abstract: An aromatic compound, particularly benzene, is stably produced in the presence of a catalyst from a lower hydrocarbon having 2 or more carbon atoms, particularly from an ethane-containing gas composition such as ethane gas and natural gas. Disclosed is a process for producing an aromatic compound by reacting ethane or an ethane-containing raw gas in the presence of a catalyst. The catalyst may comprise molybdenum carried on metallosilicate such as H-type ZSM-5H or H-type MCM-22. In the reaction, the temperature is from 550 to 750° C., preferably not lower than 600° C. and not higher than 680° C. Additionally, the raw gas further contains methane and hydrogen is added thereto, thereby improving the production efficiency and stability.

Abstract: A semiconductor chip that has a photodiode formed on it, a semiconductor device including the semiconductor chip, and manufacturing methods thereof. A second semiconductor region 11 is formed in light-receiving region R of first semiconductor region 10. First bumps 12 are formed outside light-receiving region R. Second bump 13 is formed in a ring-shape around light-receiving region R between region R and first bumps 12. Semiconductor chip T is assembled on assembly substrate S, and resin layer 30 is formed between chip T and substrate S in the region outside of said light-receiving region R.

Abstract: A semiconductor chip that has a photodiode formed on it, a semiconductor device including the semiconductor chip, and manufacturing methods thereof. A second semiconductor region 11 is formed in light-receiving region R of first semiconductor region 10. First bumps 12 are formed outside light-receiving region R. Second bump 13 is formed in a ring-shape around light-receiving region R between region R and first bumps 12. Semiconductor chip T is assembled on assembly substrate S, and resin layer 30 is formed between chip T and substrate S in the region outside of said light-receiving region R.

Abstract: An aromatic compound, particularly benzene, is stably produced in the presence of a catalyst from a lower hydrocarbon having 2 or more carbon atoms, particularly from an ethane-containing gas composition such as ethane gas and natural gas. Disclosed is a process for producing an aromatic compound by reacting ethane or an ethane-containing raw gas in the presence of a catalyst. The catalyst may comprise molybdenum carried on metallosilicate such as H-type ZSM-5H or H-type MCM-22. In the reaction, the temperature is from 550 to 750° C., preferably not lower than 600° C. and not higher than 680° C. Additionally, the raw gas further contains methane and hydrogen is added thereto, thereby improving the production efficiency and stability.

Abstract: A process for producing an aromatic hydrocarbon, comprises heating the hydrocarbon in the presence of a catalyst carrying a molybdenum compound or a rhenium compound on a metallosilicate carrier modified with a silicon compound, a sodium compound or a calcium compound. The silicon compound is a silane compound having a basic group selected from amino, alkylamino and pyridyl groups and an organic group of a size equal to or greater than the pore size of the metallosilicate and selected from trialkoxy and triphenyl groups and the sodium compound or the calcium compound is a compound having an organic group of a size equal to or greater than the pore size of the metallosilicate and selected from crown ether, hexafluoropentanedione and acetylacetonate. The silane compound, the sodium compound or the calcium compound is modified so as to make an oxide thereof by impregnating the metallosilicate carrier with it and subsequently heat-treating it in an oxygen-containing atmosphere.

Abstract: A process for producing aromatic hydrocarbons and hydrogen, in which a lower hydrocarbons-containing feedstock gas is reformed by being supplied to and being brought into contact with a catalyst under high temperature conditions thereby forming aromatic hydrocarbons and hydrogen. The method includes the steps of (a) supplying a hydrogen gas together with the feedstock gas during a supply of the feedstock gas; and (b) suspending the supply of the feedstock gas for a certain period of time while keeping a condition of a supply of the hydrogen gas. The catalyst is exemplified by a metallo-silicate carrying molybdenum and a metallo-silicate carrying molybdenum and rhodium. An amount of the hydrogen gas supplied together with the feedstock gas is set to be preferably larger than 2% and smaller than 10%, more preferably within a range of from 4 to 8%, much more preferably 8%.

Abstract: A semiconductor chip that has a photodiode formed on it, a semiconductor device including the semiconductor chip, and manufacturing methods thereof. A second semiconductor region 11 is formed in light-receiving region R of first semiconductor region 10. First bumps 12 are formed outside light-receiving region R. Second bump 13 is formed in a ring-shape around light-receiving region R between region R and first bumps 12. Semiconductor chip T is assembled on assembly substrate S, and resin layer 30 is formed between chip T and substrate S in the region outside of said light-receiving region R.