Abstract: An object of the present invention is to provide a method that can properly carry out the evaluation of a displacement and an overlapping area between first and second patterns formed through double patterning and a device therefor. To accomplish the above object, a method and a device are provided that execute a two-step matching between combined information having information concerning the first pattern combined with design information of the second pattern formed through a second exposure of double patterning and images displaying the first and second patterns, and on the basis of a moving amount of the design information of the second pattern, a displacement amount between the first and second patterns is determined.

Abstract: A method and system for evaluating a lithographic pattern obtained using multiple-patterning lithographic processing are presented. In one aspect, the method includes aligning a target design with a lithographic pattern. The target design may comprise a first design and a second design. The method further comprises identifying in the lithographic pattern a stitching region based on a region of overlap between the first design and the second design. The method further comprises determining for the identified stitching region whether a predetermined criterion is fulfilled. In some embodiments, determining whether a predetermined criterion is fulfilled may comprise determining a line or trench minimum width. Alternately or additionally, determining whether a predetermined criterion is fulfilled may comprise determining a stitching metric for the identified stitching region, and evaluating whether or not the stitching metric fulfills the predetermined criterion.

Abstract: One of principal objects of the present invention is to provide a sample dimension measuring method for detecting the position of an edge of a two-dimensional pattern constantly with the same accuracy irrespective of the direction of the edge and a sample dimension measuring apparatus. According to this invention, to accomplish the above object, it is proposed to correct the change of a signal waveform of secondary electrons which depends on the direction of scanning of an electron beam relative to the direction of a pattern edge of an inspection objective pattern. It is proposed that when changing the scanning direction of the electron beam in compliance with the direction of a pattern to be measured, errors in the scanning direction and the scanning position are corrected. In this configuration, a sufficient accuracy of edge detection can be obtained irrespective of the scanning direction of the electron beam.

Abstract: A composite picture forming method and picture forming apparatus forms pattern attribute information contained in an overlapping domain for the overlapping domain between a plurality of pictures to select the pictures to be targeted for a composition in accordance with the pattern attribute information and combine the selected pictures, and the composition of the pictures is also performed in plural stages by using the pattern attribute information in the overlapping domain.

Abstract: Easily and correctly measuring a dimension of a pattern of a photomask or of an OPC pattern of the photomask. A pattern measurement method of the present invention includes steps of obtaining both a standard pattern corresponding to a predetermined pattern and a measurement point specified in advance; setting a measurement area so that it includes two straight line segments on both sides of the measurement point among outlines of the standard pattern; and measuring a dimension between two contours of the scanned image of the predetermined pattern in the measurement area by superposing the measurement area on the scanned image of the predetermined pattern. The measurement area is set so as not to include portions near corner portions connected to two line segments.

Abstract: Mutual compatibility is established between the measurement with a high magnification and the measurement in a wide region. A pattern measurement apparatus is proposed which adds identification information to each of fragments that constitute a pattern within an image obtained by the SEM, and which stores the identification information in a predetermined storage format. Here, the identification information is added to each fragment for distinguishing between one fragment and another fragment. According to the above-described configuration, it turns out that the identification information is added to each fragment on the SEM image which has possessed no specific identification information originally. As a result, it becomes possible to implement the SEM-image management based on the identification information.

Abstract: An evaluation method and apparatus is provided for evaluating a displacement between patterns of a pattern image by using design data representative of a plurality of patterns superimposed ideally. A first distance is measured for an upper layer pattern between a line segment of the design data and an edge of the charged particle radiation image, a second distance is measured for a lower layer pattern between a line segment of the design data and an edge of the charged particle radiation image; and an superimposition displacement is detected between the upper layer pattern and lower layer pattern in accordance with the first distance and second distance.

Abstract: Mutual compatibility is established between the measurement with a high magnification and the measurement in a wide region. A pattern measurement apparatus is proposed which adds identification information to each of fragments that constitute a pattern within an image obtained by the SEM, and which stores the identification information in a predetermined storage format. Here, the identification information is added to each fragment for distinguishing between one fragment and another fragment. According to the above-described configuration, it turns out that the identification information is added to each fragment on the SEM image which has possessed no specific identification information originally. As a result, it becomes possible to implement the SEM-image management based on the identification information.

Abstract: A system and a method for detecting a defect, capable of extracting a defect occurring depending on finishing accuracy required for circuit operation are provided. The system includes a timing analyzer for extracting a critical path in which a high accuracy is required for a signal transmission operation as compared with other portions based on circuit design data, a critical path extractor for comparing the circuit design data with layout design data on a pattern and for extracting graphical data including the critical path extracted by the timing analyzer, an inspection recipe creator for deciding a portion to be inspected, based on coordinate information on the graphical data including the critical path extracted by the critical path extractor, and an SEM defect review apparatus for acquiring an image of the decided portion to be inspected on a wafer according to an inspection recipe created by the inspection recipe creator.

Abstract: A system and a method for detecting a defect, capable of extracting a defect occurring depending on finishing accuracy required for circuit operation are provided. The system includes a timing analyzer for extracting a critical path in which a high accuracy is required for a signal transmission operation as compared with other portions based on circuit design data, a critical path extractor for comparing the circuit design data with layout design data on a pattern and for extracting graphical data including the critical path extracted by the timing analyzer, an inspection recipe creator for deciding a portion to be inspected, based on coordinate information on the graphical data including the critical path extracted by the critical path extractor, and an SEM defect review apparatus for acquiring an image of the decided portion to be inspected on a wafer according to an inspection recipe created by the inspection recipe creator.

Abstract: An evaluation method and apparatus is provided for evaluating a displacement between patterns of a pattern image by using design data representative of a plurality of patterns superimposed ideally. A first distance is measured for an upper layer pattern between a line segment of the design data and an edge of the charged particle radiation image, a second distance is measured for a lower layer pattern between a line segment of the design data and an edge of the charged particle radiation image; and an superimposition displacement is detected between the upper layer pattern and lower layer pattern in accordance with the first distance and second distance.

Abstract: The present invention provides a semiconductor pattern shape evaluating apparatus using a critical dimension SEM, which eliminates the necessity of data conversion corresponding to each process of semiconductor manufacturing conventionally required; controls possessed data integratedly; can select data effective for use in each process from the possessed data easily; if the shape of formed pattern changes with time, can create a photographing recipe which enables stable measurement by correcting the photographing recipe based on time-series data. Specifically, the semiconductor pattern shape evaluating apparatus correlates coordinate systems among diversified data to control the diversified data stored in a database integratedly, selects part or all of the diversified data arbitrarily and creates a photographing recipe for observing a semiconductor pattern with a critical dimension SEM using selected data.

Abstract: An object of the present invention is to provide methods and equipment capable of providing highly accurate matching using a template including multiple patterns even when the shapes of some patterns of the template are different from corresponding ones of a SEM image, and when the template and the SEM image have a magnification error. Proposed, as a technique for achieving the object, is a method for performing matching by selectively using some of multiple patterns provided in a predetermined region of design data, and equipment for implementing the method. Moreover, proposed, as another technique for achieving the object, is a method for performing first matching by using multiple patterns provided in a predetermined region of design data and thereafter performing second matching by using some of the multiple patterns provided in the predetermined region, and equipment for implementing the method.

Abstract: An object of the present invention is to provide a sample measuring method and a sample measuring device suitable for evaluation of inclination of a pattern edge. To achieve the object, a method and a device for forming a plurality of contours of a pattern edge and evaluating the dimension between the contours are proposed below. Forming a plurality of contours allows evaluation of the degree of inclination of an edge portion of a pattern. Further, displaying evaluation values indicative of the degree of the inclination of the edge portion in an in-plane distribution form makes identifying the cause of taper formation easier.

Abstract: One of principal objects of the present invention is to provide a sample dimension measuring method for detecting the position of an edge of a two-dimensional pattern constantly with the same accuracy irrespective of the direction of the edge and a sample dimension measuring apparatus. According to this invention, to accomplish the above object, it is proposed to correct the change of a signal waveform of secondary electrons which depends on the direction of scanning of an electron beam relative to the direction of a pattern edge of an inspection objective pattern. It is proposed that when changing the scanning direction of the electron beam in compliance with the direction of a pattern to be measured, errors in the scanning direction and the scanning position are corrected. In this configuration, a sufficient accuracy of edge detection can be obtained irrespective of the scanning direction of the electron beam.

Abstract: Although there has been a method for evaluating pattern shapes of electronic devices by using, as a reference pattern, design data or a non-defective pattern, the conventional method has a problem that the pattern shape cannot be evaluated with high accuracy because of the difficulty in defining an exact shape suitable for the manufacturing conditions of the electronic devices. The present invention provides a shape evaluation method for circuit patterns of electronic devices, the method including a means for generating contour distribution data of at least two circuit patterns from contour data sets on the circuit patterns; a means for generating a reference pattern used for the pattern shape evaluation, from the contour distribution data; and a means for evaluating the pattern shape by comparing each evaluation target pattern with the reference pattern.

Abstract: The present invention provides a technique to generate an accurate connected image even in a monotonous pattern using design data as constrained conditions. A reference position is roughly determined through matching between the design data and image data, matching between neighboring images is performed using the amount of mismatch from the design data as a searching range and a connected image is generated at high speed and accurately.

Abstract: A pattern measuring method and device are provided which set a reference position for a measuring point to be measured by a scanning electron microscope and the like, based on position information of a reference pattern on an image acquired from the scanning electron microscope and based on a positional relation, detected by using design data, between the measuring point and the reference pattern formed at a position isolated from the measuring point.

Abstract: In an imaging recipe creating apparatus that uses a scanning electron microscope to create an imaging recipe for SEM observation of a semiconductor pattern, in order that the imaging recipe for measuring the wiring width and other various dimension values of the pattern from an observation image and thus evaluating the shape of the pattern is automatically generated within a minimum time by the analysis using the CAD image obtained by conversion from CAD data, an CAD image creation unit that creates the CAD image by converting the CAD data into an image format includes an image-quantizing width determining section, a brightness information providing section, and a pattern shape deformation processing section; the imaging recipe being created using the CAD image created by the CAD image creation unit.

Abstract: A pattern inspection apparatus can be provided, for example, in a scanning electron microscope system. When patterns of a plurality of layers are included in a SEM image, the apparatus separates the patterns according to each layer by using design data of the plurality of layers corresponding to the patterns. Consequently, the apparatus can realize inspection with use of only the pattern of a target layer to be inspected, pattern inspection differently for different layers, or detection of a positional offset between the layers.