Abstract: A gas ejected from a sonic nozzle toward the rear surface of a wafer. The flow speed of the gas flowing to the outer circumference side along the rear surface of the wafer is increased between the rear surface of the wafer and a second cup and is kept by Bernoulli's effects. Thus, flapping of wafer is suppressed. Furthermore, a resist solution is prevented from flowing around to the rear surface.

Abstract: By adding a perfluoromonomer to PVDF being a fluororesin to soften it, the oxygen permeability can be significantly reduced and a flexible fluororesin tube can be obtained. The oxygen permeability can also be reduced by providing a nylon tube as an outer layer. The tube is used between a chemical solution or ultrapure water feeder and a chemical solution or ultrapure water utilizing apparatus such as a cleaning apparatus or a wet etching apparatus.

Abstract: In the drying step of the single wafer type substrate cleaning system for cleaning wafers not stored in a cassette, in a sealed cleaning housing, a spin drying treatment is applied to the wafer when the wafer is supported and rotated at high speed while an inert gas for preventing oxidation is supplied to the face of the wafer, and the amount of the inert gas to be supplied to the face of the wafer is larger at the outer peripheral portion of the wafer than that supplied at the center thereof, thereby preventing oxidation on the face of the wafer effectively while optimizing the benefits of the single wafer type cleaning system.

Abstract: In the drying step of the single wafer type substrate cleaning system for cleaning wafers not stored in a cassette, in a sealed cleaning housing, a spin drying treatment is applied to the wafer when the wafer is supported and rotated at high speed while an inert gas for preventing oxidation is supplied to the face of the wafer, and the amount of the inert gas to be supplied to the face of the wafer is larger at the outer peripheral portion of the wafer than that supplied at the center thereof, thereby preventing oxidation on the face of the wafer effectively while optimizing the benefits of the single wafer type cleaning system.

Abstract: A single wafer type wet-cleaning technique for wet-cleaning wafers, individually, which are not stored in a cassette, at the front and back faces thereof simultaneously, in a sealed cleaning housing, whereby a plurality of chemical fluids are vertically and sequentially supplied from a number of upper side supply nozzles 25 and lower side supply nozzles 26 to the front and back faces of each wafer W to clean the same, and purified water is always caused to flow out of the lower side supply nozzles 26, 26, . . . , which do not supply chemical fluids, of the lower side supply nozzles, thereby preventing the occurrence of cross contamination of various chemical fluids between cleaning treatments.

Abstract: A substrate cleaning system for cleaning wafers using a sheet-type wet cleaning treatment. The system has a sealable system body, a loading/unloading booth having a substrate carry-in section in which a plurality of substances are stocked to be carried in before a cleaning treatment is applied to them and a substrate carry-out section in which a plurality of substrates are stocked to be carried out after the cleaning treatment is applied, a processing booth provided with at least one sheet-type substrate cleaning chamber in which the cleaning treatment can be applied to a plurality of substrates by a plurality of cleaning solutions, and a robot booth provided with a transport robot for transporting the substrates one by one between the processing booth and the loading/unloading booth, the respective booths having partition walls.

Abstract: A single wafer type wet-cleaning technique for wet-cleaning wafers, individually, which are not stored in a cassette, at the front and back faces thereof simultaneously, in a sealed cleaning housing, whereby a plurality of chemical fluids are vertically and sequentially supplied from a number of upper side supply nozzles 25 and lower side supply nozzles 26 to the front and back faces of each wafer W to clean the same, and purified water is always caused to flow out of the lower side supply nozzles 26, 26, . . . , which do not supply chemical fluids, of the lower side supply nozzles, thereby preventing the occurrence of cross contamination of various chemical fluids between cleaning treatments.

Abstract: A single wafer type wet-cleaning technique for wet-cleaning wafers, individually, which are not stored in a cassette, at the front and back faces thereof simultaneously, in a sealed cleaning housing, whereby a plurality of chemical fluids are vertically and sequentially supplied from a number of upper side supply nozzles 25 and lower side supply nozzles 26 to the front and back faces of each wafer W to clean the same, and purified water is always caused to flow out of the lower side supply nozzles 26, 26, . . . , which do not supply chemical fluids, of the lower side supply nozzles, thereby preventing the occurrence of cross contamination of various chemical fluids between cleaning treatments.

Abstract: In the drying step of the single wafer type substrate cleaning system for cleaning wafers not stored in a cassette, in a sealed cleaning housing, a spin drying treatment is applied to the wafer when the wafer is supported and rotated at high speed while an inert gas for preventing oxidation is supplied to the face of the wafer, and the amount of the inert gas to be supplied to the face of the wafer is larger at the outer peripheral portion of the wafer than that supplied at the center thereof, thereby preventing oxidation on the face of the wafer effectively while optimizing the benefits of the single wafer type cleaning system.

Abstract: There is provided a substrate cleaning system which is capable of cleaning wafers W in a high cleanliness atmosphere with high accuracy taking an advantage of a sheet-type wet cleaning treatment, and which is simple and compact in construction, and is excellent in cost performance.

Abstract: A single wafer type wet-cleaning technique for wet-cleaning wafers, individually, which are not stored in a cassette, at the front and back faces thereof simultaneously, in a sealed cleaning housing, whereby a plurality of chemical fluids are vertically and sequentially supplied from a number of upper side supply nozzles 25 and lower side supply nozzles 26 to the front and back faces of each wafer W to clean the same, and purified water is always caused to flow out of the lower side supply nozzles 26, 26, . . . ,, which do not supply chemical fluids, of the lower side supply nozzles, thereby preventing the occurrence of cross contamination of various chemical fluids between cleaning treatments.

Abstract: In the drying step of the single wafer type substrate cleaning system for cleaning wafers not stored in a cassette, in a sealed cleaning housing, a spin drying treatment is applied to the wafer when the wafer is supported and rotated at high speed while an inert gas for preventing oxidation is supplied to the face of the wafer, and the amount of the inert gas to be supplied to the face of the wafer is larger at the outer peripheral portion of the wafer than that supplied at the center thereof, thereby preventing oxidation on the face of the wafer effectively while optimizing the benefits of the single wafer type cleaning system.

Abstract: In the operation of a main steam condenser of a steam turbine driven by a boiler and having a gland steam condenser, the gland steam condensate is normally fed from the gland steam condenser into the main condenser condensate. To avoid contamination of the main condenser condensate by oxygen-rich water, for at least part of the start-up period of the turbine, the gland steam condensate and other drain accumulating in the condenser is prevented from entering the main condenser condensate which is to be fed to the boiler. The gland steam condensate is fed to said main condenser and stored in a reservoir separate from the hot well thereof, to undergo de-aeration before being fed into the main condenser condensate.