Patents by Inventor Ryoji Nomura

Ryoji Nomura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9129866
    Abstract: A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
    Type: Grant
    Filed: August 7, 2014
    Date of Patent: September 8, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshinobu Asami, Tamae Takano, Masayuki Sakakura, Ryoji Nomura, Shunpei Yamazaki
  • Patent number: 9048436
    Abstract: An oxadiazole derivative represented by the following general formula (G1) is synthesized and applied to the light emitting element, Am; wherein Am is a substituent represented by a general formula (Am1), (Am2), or (Am3); each of ?, ?1, and ?2 represents an arylene group having 6 to 25 carbon atoms; each of Ar1 to Ar6 represents an aryl group having 6 to 25 carbon atoms; each of R1 to R3 represents hydrogen, an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 25 carbon atoms; and R4 represents an alkyl group having 1 to 4 carbon atoms or an aryl group having 6 to 25 carbon atoms.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: June 2, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroko Murata, Harue Nakashima, Sachiko Kawakami, Nobuharu Ohsawa, Ryoji Nomura, Satoshi Seo
  • Publication number: 20150144858
    Abstract: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.
    Type: Application
    Filed: February 5, 2015
    Publication date: May 28, 2015
    Inventors: Shunpei YAMAZAKI, Hiroko ABE, Yukie NEMOTO, Ryoji NOMURA, Mikio YUKAWA
  • Patent number: 9041282
    Abstract: The light-emitting element of the present invention includes a light-emitting layer and a layer for controlling movement of carriers between a pair of electrodes. The layer for controlling movement of carriers includes a first organic compound having a carrier transporting property and a second organic compound for reducing the carrier transporting property of the first organic compound, and the second organic compound is dispersed in the first organic compound. The layer for controlling movement of carriers is provided in such a manner, whereby change in carrier balance with time can be suppressed. Therefore, a light-emitting element having a long lifetime can be obtained.
    Type: Grant
    Filed: July 21, 2014
    Date of Patent: May 26, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tsunenori Suzuki, Satoshi Seo, Ryoji Nomura
  • Patent number: 8994086
    Abstract: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.
    Type: Grant
    Filed: October 14, 2010
    Date of Patent: March 31, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hiroko Abe, Yukie Nemoto, Ryoji Nomura, Mikio Yukawa
  • Patent number: 8927114
    Abstract: A layer included in an electroluminescent element is required to be thickened to optimize light extraction efficiency of the electroluminescent element and to prevent short-circuit between electrodes. However, in a conventional element material, desired light extraction efficiency cannot be accomplished since drive voltage rises or power consumption is increased as the element material is thickened. A composite is formed by mixing a conjugated molecule having low ionization potential and a substance having an electron-accepting property to the conjugated molecule. A composite layer included in an element is formed using the composite as an element material. The composite layer is arranged between a first electrode and a light emitting layer or between a second electrode and a light emitting layer. The composite layer has high conductivity; therefore, drive voltage does not rise even if a film thickness is increased.
    Type: Grant
    Filed: November 24, 2005
    Date of Patent: January 6, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Ryoji Nomura, Satoshi Seo, Hiroko Abe, Takako Takasu, Hideko Inoue, Hisao Ikeda, Daisuke Kumaki, Junichiro Sakata
  • Patent number: 8916857
    Abstract: A light-emitting element disclosed in the present invention includes a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode. The present invention is characterized by the device structure in which the first layer comprising a hole-transporting material is doped with a hole-blocking material or an organic compound having a large dipole moment. This structure allows the formation of a high performance light-emitting element with high luminous efficiency and long lifetime. The device structure of the present invention facilitates the control of the rate of the carrier transport, and thus, leads to the formation of a light-emitting element with a well-controlled carrier balance, which contributes to the excellent characteristics of the light-emitting element of the present invention.
    Type: Grant
    Filed: November 24, 2012
    Date of Patent: December 23, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Satoshi Seo, Ryoji Nomura
  • Patent number: 8912718
    Abstract: It is an object of the present invention to provide a light emitting device which is less affected by a malfunction caused in a light emitting element. It is another object of the invention to provide a light emitting device in which light emitting elements are connected in series. As to a light emitting device of the invention, groups of circuits each having a light emitting element and a limiter are connected in parallel. Here, a light emitting element and a limiter are connected in series. The number of the circuits may be at least two or more. Further, each circuit group includes at least one light emitting element.
    Type: Grant
    Filed: July 11, 2013
    Date of Patent: December 16, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Ryoji Nomura
  • Patent number: 8912712
    Abstract: To provide an aspect of a novel display device using a light emitting element which is composed of a cathode, an EL layer and an anode, and a manufacturing device of the display device. According to the present invention, dual-sided emission display can be performed in one sheet white color light emitting panel 1001 in which, for example, different images can be displayed on a topside screen and backside screen (full color display, monochrome display or area color display). Two polarizing plates 1002, 1003 are formed by shifting the position thereof with an angular deviation of 90 degrees each other so as to prevent outside light from passing through the pane, thereby realizing a black display when not displayed.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: December 16, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hiroko Abe, Masakazu Murakami, Ryoji Nomura
  • Publication number: 20140364626
    Abstract: It is an object of the present invention to provide a light emitting element, which is resistant to repetition of an oxidation reaction. It is another object of the invention to provide a light emitting element, which is resistant to repetition of a reduction reaction. An anthracene derivative is represented by a general formula (1). In the general formula (1), R1 represents hydrogen or an alkyl group having 1 to 4 carbon atoms, R2 represents any one of hydrogen, an alkyl group having 1 to 4 carbon atoms and an aryl group having 6 to 12 carbon atoms, R3 represents any one of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 12 carbon atoms, Ph1 represents a phenyl group, and X1 represents an arylene group having 6 to 15 carbon atoms.
    Type: Application
    Filed: August 22, 2014
    Publication date: December 11, 2014
    Inventors: Harue Nakashima, Sachiko KAWAKAMI, Kumi KOJIMA, Ryoji NOMURA, Nobuharu OHSAWA
  • Patent number: 8901542
    Abstract: The present invention provides a novel substance having an excellent color purity of blue, a light-emitting element and a light-emitting device using the novel substance. A stilbene derivative has a structure shown by the general formula (1). In the general formula (1), R1 is hydrogen, an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 25 carbon atoms. R2 is an alkyl group having 1 to 4 carbon atoms or an aryl group having 6 to 25 carbon atoms. Each of R3 to R5 is hydrogen or an alkyl group having 1 to 4 carbon atoms. Ar1 is an aryl group having 6 to 25 carbon atoms.
    Type: Grant
    Filed: June 4, 2012
    Date of Patent: December 2, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masakazu Egawa, Harue Nakashima, Sachiko Kawakami, Nobuharu Ohsawa, Satoshi Seo, Ryoji Nomura
  • Publication number: 20140346505
    Abstract: A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
    Type: Application
    Filed: August 7, 2014
    Publication date: November 27, 2014
    Inventors: Yoshinobu ASAMI, Tamae TAKANO, Masayuki SAKAKURA, Ryoji NOMURA, Shunpei YAMAZAKI
  • Publication number: 20140326978
    Abstract: The light-emitting element of the present invention includes a light-emitting layer and a layer for controlling movement of carriers between a pair of electrodes. The layer for controlling movement of carriers includes a first organic compound having a carrier transporting property and a second organic compound for reducing the carrier transporting property of the first organic compound, and the second organic compound is dispersed in the first organic compound. The layer for controlling movement of carriers is provided in such a manner, whereby change in carrier balance with time can be suppressed. Therefore, a light-emitting element having a long lifetime can be obtained.
    Type: Application
    Filed: July 21, 2014
    Publication date: November 6, 2014
    Inventors: Tsunenori Suzuki, Satoshi Seo, Ryoji Nomura
  • Patent number: 8867585
    Abstract: The present invention provides a laser oscillator using an electroluminescent material that can enhance directivity of emitted laser light and resistance to a physical impact. The laser oscillator has a first layer including a concave portion, a second layer formed over the first layer to cover the concave portion, and a light emitting element formed over the second layer to overlap the concave portion, wherein the second layer is planarized, an axis of laser light obtained from the light emitting element intersects with a planarized surface of the second layer, the first layer has a curved surface in the concave portion, and a refractive index of the first layer is lower than that of the second layer.
    Type: Grant
    Filed: November 9, 2011
    Date of Patent: October 21, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Ryoji Nomura, Akihisa Shimomura
  • Patent number: 8865511
    Abstract: It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semiconductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator.
    Type: Grant
    Filed: November 14, 2011
    Date of Patent: October 21, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mikio Yukawa, Nobuharu Ohsawa, Ryoji Nomura, Yoshinobu Asami
  • Publication number: 20140299822
    Abstract: An oxadiazole derivative represented by the following general formula (G1) is synthesized and applied to the light emitting element, Am; wherein Am is a substituent represented by a general formula (Am1), (Am2), or (Am3); each of ?, ?1, and ?2 represents an arylene group having 6 to 25 carbon atoms; each of Ar1 to Ar6 represents an aryl group having 6 to 25 carbon atoms; each of R1 to R3 represents hydrogen, an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 25 carbon atoms; and R4 represents an alkyl group having 1 to 4 carbon atoms or an aryl group having 6 to 25 carbon atoms.
    Type: Application
    Filed: March 31, 2014
    Publication date: October 9, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroko Murata, Harue Nakashima, Sachiko Kawakami, Nobuharu Ohsawa, Ryoji Nomura, Satoshi Seo
  • Patent number: 8815410
    Abstract: It is an object of the present invention to provide a light emitting element, which is resistant to repetition of an oxidation reaction. It is another object of the invention to provide a light emitting element, which is resistant to repetition of a reduction reaction. An anthracene derivative is represented by a general formula (1). In the general formula (1), R1 represents hydrogen or an alkyl group having 1 to 4 carbon atoms, R2 represents any one of hydrogen, an alkyl group having 1 to 4 carbon atoms and an aryl group having 6 to 12 carbon atoms, R3 represents any one of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 12 carbon atoms, Ph1 represents a phenyl group, and X1 represents an arylene group having 6 to 15 carbon atoms.
    Type: Grant
    Filed: December 26, 2005
    Date of Patent: August 26, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Harue Nakashima, Sachiko Kawakami, Kumi Kojima, Ryoji Nomura, Nobuharu Ohsawa
  • Publication number: 20140225097
    Abstract: A novel stilbene derivative is provided with motivation of providing a blue emissive material showing excellent color purity. The use of the stilbene derivative of the present invention allows the fabrication of a blue-emissive light-emitting element with excellent color purity. The invention also includes an electronic device equipped with a display portion in which the stilbene derivative is employed. The stilbene derivative of the present invention is represented by formula (1), in which Ar1 and Ar2 may form a 5-membered ring by being directly bonded to each other. In formula (1), A11 represents any one of substituents represented by general formulas (1-1) to (1-3). The variables shown in formula (1) and (1-1) to (1-3) are as defined in the specification.
    Type: Application
    Filed: April 16, 2014
    Publication date: August 14, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masakazu Egawa, Harue OSAKA, Sachiko KAWAKAMI, Nobuharu OHSAWA, Satoshi SEO, Ryoji NOMURA
  • Patent number: 8804404
    Abstract: A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
    Type: Grant
    Filed: August 29, 2013
    Date of Patent: August 12, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshinobu Asami, Tamae Takano, Masayuki Sakakura, Ryoji Nomura, Shunpei Yamazaki
  • Publication number: 20140203266
    Abstract: Color purity of a light emitting element is improved without an adverse effect such as reduction in voltage and luminance efficiency. The light emitting element has a light emitting laminated body including a light emitting layer between a pair of electrodes. A buffer layer is provided to be in contact with at least one of the electrodes. One of the electrodes is an electrode having high reflectance and the other is a translucent electrode. By employing a translucent electrode, light can be transmitted and reflected. An optical distance between the electrodes is adjusted in accordance with a thickness of the buffer layer, and accordingly, light can be resonated between the electrodes. The buffer layer is made of a composite material including an organic compound and a metal compound; therefore, voltage and luminance efficiency of the light emitting element is not affected even if a distance between the electrodes becomes long.
    Type: Application
    Filed: March 25, 2014
    Publication date: July 24, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Ryoji NOMURA, Satoshi SEO, Yuji IWAKI, Nozomu SUGISAWA