Abstract: Provided is a GPF capable of exhibiting better than conventional three-way purification function. A gasoline particulate filter (GPF) that is provided in an exhaust pipe of an engine and that performs purification by capturing particulate matter (PM) in exhaust gas is provided with a filter substrate in which a plurality of cells extending from an exhaust gas inflow-side end face to an outflow-side end face are defined by porous partition walls and in which openings at the inflow-side end face and openings at the outflow-side end face of the cells are alternately sealed; and a three-way catalyst (TWC) supported by the partition wall. The three-way catalyst is the GPF comprising a catalytic metal containing at least Rh, and a composite oxide having an oxygen storage capacity and containing Nd and Pr in a crystal structure.

Abstract: A shower plate adapted to be installed in a plasma deposition apparatus including a gas inlet port, a shower head, a reaction chamber and an exhaust duct, the shower plate being adapted to be attached to the showerhead and having: a front surface adapted to face the gas inlet port; and a rear surface opposite to the front surface, wherein the shower plate has multiple apertures each extending from the front surface to the rear surface, and wherein the shower plate further has at least one aperture extending from the front surface side of the shower plate to the exhaust duct.

Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

Abstract: A scintillator array including a plurality of scintillators, an optical detector array corresponding to the scintillators, an AD conversion unit configured to convert an analog signal output from each optical detector into digital data, and a position detection processing unit configured to specify a position of the scintillator on which the radiation is incident are provided. If there are two different pieces of digital data at the same time, the position detection processing unit determines that radiation is incident on two scintillators when energy value data of the two pieces of digital data is greater than an energy value of a Compton edge and specifies the address of the scintillator on which the radiation is incident by comparing the energy values of the two pieces of digital data when at least one of the two energy values is less than the energy value of the Compton edge.

Abstract: A scintillator array including a plurality of scintillators, an optical detector array corresponding to the scintillators, an AD conversion unit configured to convert an analog signal output from each optical detector into digital data, and a position detection processing unit configured to specify a position of the scintillator on which the radiation is incident are provided. If there are two different pieces of digital data at the same time, the position detection processing unit determines that radiation is incident on two scintillators when energy value data of the two pieces of digital data is greater than an energy value of a Compton edge and specifies the address of the scintillator on which the radiation is incident by comparing the energy values of the two pieces of digital data when at least one of the two energy values is less than the energy value of the Compton edge.

Abstract: Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyly halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

Abstract: An exhaust emission control system for an internal combustion engine is provided. The exhaust emission control system (4) includes a monolith catalyst (MC) that includes an oxygen storage agent and a noble metal-based three-way catalyst including Pd, Rh, and Pt disposed at an upstream location in the exhaust gas flow in the internal combustion engine (2), and a perovskite-type double oxide having a three-way catalytic function disposed at a downstream location in the exhaust gas flow. The amount C1 of Pd carried is 0.97 g/L?C1?1.68 g/L, the amount C2 of Rh carried is 0.11 g/L?C2?0.2 g/L, the amount C3 of Pt carried is 0.06 g/L?C3?0.11 g/L, the amount C4 of the oxygen storage agent carried is 25 g/L?C4?75 g/L, and the amount C5 of the perovskite-type double oxide carried is 5 g/L?C5?15 g/L.

Abstract: An exhaust emission control system for an internal combustion engine is provided. The exhaust emission control system (4) includes a monolith catalyst (MC) that includes an oxygen storage agent and a noble metal-based three-way catalyst including Pd, Rh, and Pt disposed at an upstream location in the exhaust gas flow in the internal combustion engine (2), and a perovskite-type double oxide having a three-way catalytic function disposed at a downstream location in the exhaust gas flow. The amount C1 of Pd carried is 0.97 g/L≦C1≦1.68 g/L, the amount C2 of Rh carried is 0.11 g/L≦C2≦0.2 g/L, the amount C3 of Pt carried is 0.06 g/L≦C3≦0.11 g/L, the amount C4 of the oxygen storage agent carried is 25 g/L≦C4≦75 g/L, and the amount C5 of the perovskite-type double oxide carried is 5 g/L≦C5≦15 g/L.