Abstract: A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm; plural red fluorescent layers that are formed above the light emitting element to include a red fluorescent material, the red fluorescent layers being disposed at predetermined intervals; and plural green fluorescent layers that are formed above the light emitting element to include a green fluorescent material, a distance between the light emitting element and the green fluorescent layers being larger than a distance between the light emitting element and the red fluorescent layers.

Abstract: According to one embodiment, a luminescent material includes luminescent material particles having a composition represented by formula A. (Mg1-w,AEw)a(Ge1-x,Snx)bOc,Cld:zMn??A where AE is at least one selected from Ca and Sr, and 3.5?a?4.4, 0.8?b?1.1, 5.5?c?7.0, 0<d?0.41, 0<w?0.05, 0<x?0.10, and 0<z?0.03.

Abstract: A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm; plural red fluorescent layers that are formed above the light emitting element to include a red fluorescent material, the red fluorescent layers being disposed at predetermined intervals; and plural green fluorescent layers that are formed above the light emitting element to include a green fluorescent material, a distance between the light emitting element and the green fluorescent layers being larger than a distance between the light emitting element and the red fluorescent layers.

Abstract: A light emitting device according to one embodiment includes a board; plural first light emitting elements mounted on the board to emit light having a wavelength of 250 nm to 500 nm; plural second light emitting elements mounted on the board to emit light having a wavelength of 250 nm to 500 nm; a first fluorescent layer formed on each of the first light emitting elements, the first fluorescent layer including a first phosphor; and a second fluorescent layer formed on each of the second light emitting elements, the second fluorescent layer including a second phosphor. The second phosphor is higher than the first phosphor in luminous efficiency at 50° C., and is lower than the first phosphor in the luminous efficiency at 150° C.

Abstract: A light emitting device according to one embodiment includes a board; plural first light emitting elements mounted on the board to emit light having a wavelength of 250 nm to 500 nm; plural second light emitting elements mounted on the board to emit light having a wavelength of 250 nm to 500 nm; a first fluorescent layer formed on each of the first light emitting elements, the first fluorescent layer including a first phosphor; and a second fluorescent layer formed on each of the second light emitting elements, the second fluorescent layer including a second phosphor. The second phosphor is higher than the first phosphor in luminous efficiency at 50° C., and is lower than the first phosphor in the luminous efficiency at 150° C.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting element emitting light in a region ranging from ultraviolet to visible, and a visible-light luminescent element absorbing light emitted from the semiconductor light-emitting element and outputting visible light. The visible-light luminescent element includes a substrate, a light-reflecting layer formed on the substrate and containing light scattering particles, and a luminescent layer containing phosphor particles. The luminescent layer absorbs light emitted from the semiconductor light-emitting element and output visible light. The luminescent layer further absorbs light that is emitted from the semiconductor light-emitting element, arrives at and is reflected from the light scattering particles, and output the visible light.

Abstract: There is provided a light emitting device which includes a light emitting element having a main emission peak in the wavelength region of greater than 420 nm and equal to or less than 500 nm, and a phosphor layer formed on the light emitting element. The light emitting element of this light emitting device has a junction temperature of from 100° C. to 200° C. at the time of continuous driving. Furthermore, the phosphor layer contains a phosphor represented by the following general formula (A), which absorbs the light emitted from the light emitting element and thereby emits light having a main emission peak in the wavelength region of equal to or greater than 650 nm and equal to or less than 665 nm: (Mg1?x, AEx)a(Ge1?y, Sny)bOcHAd:zMn ??(A) wherein AE represents at least one or more elements selected from the group consisting of Ca or Sr; HA represents at least one or more elements selected from the group consisting of F or Cl; 2.54?a?4.40, 0.80?b?1.10, 3.85?c?7.00, 0?d?2.00, 0?x?0.05, 0?y?0.

Abstract: The present invention provides a fluorescent substance excellent both in quantum efficiency and in temperature characteristics, and also provides a process for producing the fluorescent substance. This fluorescent substance is an oxynitride phosphor having a low paramagnetic defect density and comprising aluminum, silicon, either or both of oxygen and nitrogen, and a metal element M, provided that the metal element M is partly replaced with an emission center element R. That phosphor can be produced by the steps of: subjecting a mixture of starting materials to heat treatment under a nitrogen atmosphere so as to obtain an intermediate fired product, and then further subjecting the intermediate fired product to heat treatment under an atmosphere of nitrogen-hydrogen mixed gas.

Abstract: A luminescent material is provided, which includes a compound having a composition represented by the following general formula (A): (Sra1,Bab1,Cac1,Rev1,Euw1)2SiO4??(A) wherein, Re is at least one selected from a group consisting of Pr and Dy, and a1, b1, c1, v1 and w1 satisfy following relationships: a1+b1+c1+v1+w1=1??(1), 0?a1/(1?v1?w1)?1??(2), 0?b1/(1?v1?w1)?1??(3), 0?c1/(1?v1?w1)?1??(4), 0<v1?0.15??(5), 0<w1?0.02??(6).

Abstract: A luminescent material is provided, which comprises a crystalline phase including Y, Si, O and N, and an activator comprising Tb and Ce.

Abstract: The embodiment provides a process for production of an oxynitride fluorescent substance. An compound containing In or Ga is adopted in the process as a material thereof. The red fluorescent substance produced by the process can be combined with a semiconductor light-emitting element, so as to be used in a light-emitting device or a light-emitting module.

Abstract: According to one embodiment, a luminescent material includes luminescent material particles having a composition represented by formula A. (Mg1-w,AEw)a(Ge1-x,Snx)bOc,Cld:zMn ??A where AE is at least one selected from Ca and Sr, and 3.5?a?4.4, 0.8?b?1.1, 5.5?c?7.0, 0<d?0.41, 0<w?0.05, 0<x?0.10, and 0<z?0.03.

Abstract: According to one embodiment, an electronic apparatus includes a receiving module, a receiving module and a sound output module. The receiving module is configured to receive data of a motion picture and data of sound associated with a given timing in the motion picture, the data of the sound generated separately from the motion picture. The receiving module is configured to play back the motion picture. The sound output module is configured to output the sound at the given timing when the motion picture playing back module plays back the motion picture.

Abstract: A luminescent material which is featured in that it exhibits an emission peak at a wavelength ranging from 490 to 580 nm as it is excited by light having a wavelength ranging from 250 to 500 nm and that it has a composition represented by the following general formula (2): (M1-xRx)a2AlSib2Oc2Nd2??(2) (In the general formula (2), M is at least one metallic element excluding Si and Al, R is a luminescence center element, and x, a2, b2, c2 and d2 satisfy the following relationships: 0<x?1, 0.93<a2<1.3, 4.0<b2<5.8 0.6<c2<1, 6<d2<11).

Abstract: A luminescent material which is featured in that it exhibits an emission peak at a wavelength ranging from 490 to 580 nm as it is excited by light having a wavelength ranging from 250 to 500 nm and that it has a composition represented by the following general formula (2): (M1-xRx)a2AlSib2Oc2Nd2 ??(2) (In the general formula (2), M is at least one metallic element excluding Si and Al, R is a luminescence center element, and x, a2, b2, c2 and d2 satisfy the following relationships: 0<x?1, 0.93<a2<1.3, 4.0<b2<5.8 0.6<c2<1, 6<d2<11).

Abstract: A luminescent material which is featured in that it exhibits an emission peak at a wavelength ranging from 490 to 580 nm as it is excited by light having a wavelength ranging from 250 to 500 nm and that it has a composition represented by the following general formula (2): (M1-xRx)a2AlSib2Oc2Nd2??(2) (In the general formula (2), M is at least one metallic element excluding Si and Al, R is a luminescence center element, and x, a2, b2, c2 and d2 satisfy the following relationships: 0<x?1, 0.93<a2<1.3, 4.0<b2<5.8 0.6<c2<1, 6<d2<11).

Abstract: A luminescent material is provided, which includes a compound having a composition represented by the following general formula (A): (Sra1,Bab1,Cac1,Rev1,Euw1)2SiO4??(A) wherein, Re is at least one selected from a group consisting of Pr and Dy, and a1, b1, c1, v1 and w1 satisfy following relationships: a1+b1+c1+v1+w1=1??(1), 0?a1/(1?v1?w1)?1??(2), 0?b1/(1?v1?w1)?1??(3), 0?c1/(1?v1?w1)?1??(4), 0<v1?0.15??(5), 0<w1?0.02??(6).

Abstract: A luminescent material is provided, which includes a compound having a composition represented by the following general formula (A): (Sra1,Bab1,Cac1,Rev1,Euw1)2SiO4??(A) wherein, Re is at least one selected from a group consisting of Pr and Dy, and a1, b1, c1, v1 and w1 satisfy following relationships: a1+b1+c1+v1+w1=1??(1), 0?a1/(1?v1?w1)?1??(2), 0?b1/(1?v1?w1)?1??(3), 0?c1/(1?v1?w1)?1??(4), 0<v1?0.15??(5), 0<w1?0.02??(6).

Abstract: A method for manufacturing a fluorescent substance is provided, which includes mixing a raw material for Eu, a raw material for Si, at least one raw material powder of alkaline earth, and at least one selected from the group consisting of raw materials for La , Gd, Cs, and K to obtain a mixture of raw materials; pre-firing the mixture to obtain a baked material; mixing the baked material and firing in a reducing atmosphere consisting of a mixed gas of N2/H2 to obtain a first fired product; pulverizing the first fired product to obtain a pulverized first fired product; firing the pulverized first fired product in a reducing atmosphere consisting of N2/H2 to obtain a fluorescent substance consisting of an alkaline earth ortho-silicate; pulverizing the fluorescent substance to obtain a fluorescent particle; sieving the fluorescent particle; and providing a surface-covering material on a surface of the fluorescent particle.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting element emitting light in a region ranging from ultraviolet to visible, and a visible-light luminescent element absorbing light emitted from the semiconductor light-emitting element and outputting visible light. The visible-light luminescent element includes a substrate, a light-reflecting layer formed on the substrate and containing light scattering particles, and a luminescent layer containing phosphor particles. The luminescent layer absorbs light emitted from the semiconductor light-emitting element and output visible light. The luminescent layer further absorbs light that is emitted from the semiconductor light-emitting element, arrives at and is reflected from the light scattering particles, and output the visible light.