Abstract: A wiring-buried glass substrate includes a glass substrate and a first wiring. The glass substrate includes a first surface, a second surface perpendicular to the first surface, and a third surface facing the first surface. The first wiring includes a first pillar portion and a first beam portion. The first pillar portion extends in a first direction perpendicular to the first surface of the glass substrate. The first beam portion is connected to a first surface of the first pillar portion and extends to a second direction perpendicular to a second surface of the glass substrate. The first wiring is buried in the glass substrate. The first surface of the first beam portion is exposed from a third surface of the glass substrate.

Abstract: An object of the present disclosure is to provide a device that can be manufactured in a simple process while ensuring a reduction in influence of noise on an electronic component. A device according to the present disclosure, accomplished to fulfill the object, includes light emitting element, light receiving element, electronic component to process signals sent from light receiving element, and optical component cover light emitting element and light receiving element. The device further includes reflector cover a lower surface of optical component and substrate. Reflector has first opening directly above light emitting element and second opening directly above light receiving element. Light emitting element, light receiving element, reflector, electronic component, and optical component are mounted over substrate. Reflector is electrically connected to substrate by a member disposed between reflector and substrate.

Abstract: A wiring-buried glass substrate includes a glass substrate and a first wiring. The glass substrate includes a first surface, a second surface perpendicular to the first surface, and a third surface facing the first surface. The first wiring includes a first pillar portion and a first beam portion. The first pillar portion extends in a first direction perpendicular to the first surface of the glass substrate. The first beam portion is connected to a first surface of the first pillar portion and extends to a second direction perpendicular to a second surface of the glass substrate. The first wiring is buried in the glass substrate. The first surface of the first beam portion is exposed from a third surface of the glass substrate.

Abstract: An infrared ray detecting element includes: a substrate having a cavity; an infrared ray detecting portion including, sequentially stacked, a lower electrode layer, a detection layer, and an upper electrode layer; first and second support portions which support the infrared ray detecting portion above the cavity; and first and second external lead portions for leading electrical signals outputted from the infrared ray detecting portion, to the outside. The first support portion includes, sequentially stacked, a first upper wiring pattern, a first insulating layer, and a first lower wiring pattern. The upper electrode layer is connected to the first external lead portion via the first upper wiring pattern. The second support portion includes, sequentially stacked, a second upper wiring pattern, a second insulating layer, and a second lower wiring pattern. The lower electrode layer is connected to the second external lead portion via the second lower wiring pattern.

Abstract: An infrared ray detecting element includes: a substrate having a cavity; an infrared ray detecting portion including, sequentially stacked, a lower electrode layer, a detection layer, and an upper electrode layer; first and second support portions which support the infrared ray detecting portion above the cavity; and first and second external lead portions for leading electrical signals outputted from the infrared ray detecting portion, to the outside. The first support portion includes, sequentially stacked, a first upper wiring pattern, a first insulating layer, and a first lower wiring pattern. The upper electrode layer is connected to the first external lead portion via the first upper wiring pattern. The second support portion includes, sequentially stacked, a second upper wiring pattern, a second insulating layer, and a second lower wiring pattern. The lower electrode layer is connected to the second external lead portion via the second lower wiring pattern.

Abstract: In a semiconductor physical quantity sensor of electrostatic capacitance type, mutually facing peripheral areas (bonding areas) of a glass substrate and a silicon substrate are contacted for anodic bonding, while at the same time, both substrates have an anodic bonding voltage applied therebetween so as to be integrated. A fixed electrode is formed on a bonding face-side surface of the silicon substrate, while a movable electrode is formed on a bonding face-side surface of the semiconductor substrate. An equipotential wiring, which short-circuits the fixed electrode to the movable electrode as a countermeasure to discharge in anodic bonding, is formed on the bonding face-side surface of the glass substrate inside the bonding area before the anodic bonding. After the anodic bonding, the equipotential wiring is cut and removed.

Abstract: A semiconductor acceleration sensor having beam parts formed in substantially L-shape to surround a weight part, wherein formed to surround a square part, as seen in plan view and constituting the weight part, are two elongated L-shaped beam parts, at locations close to proximal end portions of which are formed protruding portions protruding from a fixed part toward the weight part, and receiving recessed portions protruding from the weight part toward the fixed part to surround the protruding portions. The protruding portions have an outer shape substantially the same as an inner wall surface of the receiving recessed portions so that movements of the weight part in any directions in a horizontal direction perpendicular to an up and down direction are limited as a result of reception of the protruding portions by the receiving recessed portions.

Abstract: A relay device using a conductive fluid and having excellent switching response is provided. This relay device mainly comprises a laminate having an interior space, and formed by bonding a semiconductor substrate to an insulating substrate, at least two contacts exposed to the interior space, a diaphragm portion facing the interior space, a conductive fluid sealed in the interior space, and an actuator for elastically deforming the diaphragm portion. By forming the diaphragm portion on the semiconductor substrate, it is possible to reduce a driving force of the actuator needed to elastically deform the diaphragm portion, and obtain a volume change of the interior space with good response. This volume change causes a positional displacement of the conductive fluid in the interior space, thereby forming a conductive state or a non-conductive sate between the contacts.

Abstract: A semiconductor acceleration sensor having beam parts formed in substantially L-shape to surround a weight part, wherein formed to surround a square part, as seen in plan view and constituting the weight part, are two elongated L-shaped beam parts, at locations close to proximal end portions of which are formed protruding portions protruding from a fixed part toward the weight part, and receiving recessed portions protruding from the weight part toward the fixed part to surround the protruding portions. The protruding portions have an outer shape substantially the same as an inner wall surface of the receiving recessed portions so that movements of the weight part in any directions in a horizontal direction perpendicular to an up and down direction are limited as a result of reception of the protruding portions by the receiving recessed portions.

Abstract: In a semiconductor physical quantity sensor of electrostatic capacitance type, mutually facing peripheral areas (bonding areas) of a glass substrate and a silicon substrate are contacted for anodic bonding, while at the same time, both substrates have an anodic bonding voltage applied therebetween so as to be integrated. A fixed electrode is formed on a bonding face-side surface of the silicon substrate, while a movable electrode is formed on a bonding face-side surface of the semiconductor substrate. An equipotential wiring, which short-circuits the fixed electrode to the movable electrode as a countermeasure to discharge in anodic bonding, is formed on the bonding face-side surface of the glass substrate inside the bonding area before the anodic bonding. After the anodic bonding, the equipotential wiring is cut and removed.

Abstract: A sensor unit includes a pressure sensor, an acceleration sensor and a signal-processing circuit, which are disposed on the bottom surface of a lead to form a line in the longitudinal direction of the sensor unit. The pressure sensor and the acceleration sensor are disposed at respective symmetrical positions with respect to the center of the signal-processing circuit in the longitudinal direction of the sensor unit. Each of the pressure sensor and the acceleration sensor has substantially the same height dimension. The sensors, the signal-processing circuit and the lead are sealed with a molded body, in such a manner as to allow lead terminals of the lead to protrude outside the molded body. The signal-processing circuit is operable, based on a signal from the acceleration sensor, to control the ON/OFF action of the pressure sensor.

Abstract: A sensor unit includes a pressure sensor, an acceleration sensor and a signal-processing circuit, which are disposed on the bottom surface of a lead to form a line in the longitudinal direction of the sensor unit. The pressure sensor and the acceleration sensor are disposed at respective symmetrical positions with respect to the center of the signal-processing circuit in the longitudinal direction of the sensor unit. Each of the pressure sensor and the acceleration sensor has substantially the same height dimension. The sensors, the signal-processing circuit and the lead are sealed with a molded body, in such a manner as to allow lead terminals of the lead to protrude outside the molded body. The signal-processing circuit is operable, based on a signal from the acceleration sensor, to control the ON/OFF action of the pressure sensor.