Abstract: A semiconductor device according to the present invention includes: a wiring; an interlayer insulating film formed over the wiring and having an opening reaching the wiring from a top surface thereof; an intra-opening metal film formed on the wiring inside the opening and made of a metal material that contains aluminum; a top surface metal film formed over the interlayer insulating film and made of the metal material; and a conduction securing film formed on a side surface of the opening to secure conduction between the intra-opening metal film and top surface metal film.

Abstract: A semiconductor device according to the present invention includes: a semiconductor substrate; a first copper interconnection provided on the semiconductor substrate; an insulating layer provided over the first copper interconnection and having a hole extending therethrough to the first copper interconnection; a barrier layer composed of a tantalum-containing material and covering at least a sidewall of the hole and a part of the first copper interconnection exposed in the hole; and a second copper interconnection provided in intimate contact with the barrier layer and electrically connected to the first copper interconnection via the barrier layer; wherein the barrier layer has a nitrogen concentration profile such that the concentration of nitrogen contained in the material varies to be lower in a boundary portion of the barrier layer adjacent to the first copper interconnection and in a boundary portion of the barrier layer adjacent to the second copper interconnection and higher in an intermediate portion

Abstract: An exhaust smoke denitrating apparatus in which using an NH3 injection unit, compressed air is fed from blower to ejector for extracting of exhaust gas from HRSG1, and with thus obtained mixed gas, NH3-containing gas is produced from NH3 water by NH3 water evaporator, the NH3-containing gas injected through NH3-containing gas injection nozzle of the HRSG1 disposed on a front stream side of denitration catalyst layer. As any high-temperature exhaust gas is cooled and diluted by compressed air, there is no danger of oxidation of NH3 during the stage of evaporation of NH3 water. The moisture level of exhaust gas can be lowered, thereby enabling inhibition of any drain generation in exhaust gas extraction piping. Air warming within NH3 water evaporation system can be carried out at an early stage.

Abstract: The semiconductor device according to the present invention includes a first interlayer dielectric film, a plurality of copper damascene wires embedded in the first interlayer dielectric film at an interval from each other, and a diffusion preventing film stacked on the first interlayer dielectric film for preventing diffusion of copper contained in the copper damascene wires, while an air gap closed with the diffusion preventing film is formed between the copper damascene wires adjacent to each other by partially removing the first interlayer dielectric film from the space between these copper damascene wires.