Patents by Inventor Ryosuke Taniguchi

Ryosuke Taniguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • EPOXY COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS
    Publication number: 20200283400
    Abstract: An epoxy compound of formula (1) is provided. A resist composition comprising the epoxy compound is capable of adequately controlling the diffusion length of acid generated from an acid generator without sacrificing sensitivity.
    Type: Application
    Filed: February 25, 2020
    Publication date: September 10, 2020
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Masayoshi Sagehashi, Ryosuke Taniguchi, Takeru Watanabe, Yoshinori Matsui
  • Resist composition, pattern forming process, polymer, and monomer
    Patent number: 10310376
    Abstract: A polymer comprising recurring units containing a specific lactone ring and having an alkyl group on ?-butyrolactone skeleton of fused ring lactone and an alkyl ester substituent group intervening between the lactone structure and the polymer backbone is provided. A resist composition comprising the polymer as base resin is improved in such properties as DOF margin and MEF and quite effective for precise micropatterning.
    Type: Grant
    Filed: December 8, 2016
    Date of Patent: June 4, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Teppei Adachi, Ryosuke Taniguchi, Koji Hasegawa, Kenji Yamada
  • Sulfonium compound, making method, resist composition, and pattern forming process
    Patent number: 10248022
    Abstract: A sulfonium compound having formula (1) exerts a satisfactory acid diffusion control function wherein R1, R2 and R3 are a C1-C20 monovalent hydrocarbon group which may contain a heteroatom, p=0-5, q=0-5, and r=0-4. A resist composition comprising the sulfonium compound is processed by lithography to form a resist pattern with improved resolution, LWR, MEF and CDU.
    Type: Grant
    Filed: May 9, 2017
    Date of Patent: April 2, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Masaki Ohashi, Ryosuke Taniguchi
  • SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS
    Publication number: 20190064665
    Abstract: A resist composition comprising a sulfonium compound of specific structure as PAG has excellent lithography performance factors such as minimal defects, high sensitivity, improved LWR and CDU, and is a quite effective resist material for precise micropatterning.
    Type: Application
    Filed: August 22, 2018
    Publication date: February 28, 2019
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takayuki Fujiwara, Ryo Mitsui, Masaki Ohashi, Ryosuke Taniguchi, Koji Hasegawa
  • RESIST COMPOSITION AND PATTERN FORMING PROCESS
    Publication number: 20190033715
    Abstract: A polymer comprising units having a highly fused homoadamantane skeleton at side chain end bonded to the polymer backbone via a linking group has an appropriate solvent solubility and is capable of suppressing acid diffusion. A resist composition comprising the polymer and a specific photoacid generator exhibits a good DOF margin, CD uniformity, and a minimal CD change during PPD, and is quite effective in precise micropatterning.
    Type: Application
    Filed: July 27, 2018
    Publication date: January 31, 2019
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Teppei Adachi, Ryosuke Taniguchi, Kazuhiro Katayama
  • Sulfonium salt, resist composition, and patterning process
    Patent number: 10180626
    Abstract: On use of a sulfonium salt of specific structure as PAG, acid diffusion is suppressed. A resist composition comprising the sulfonium salt forms a pattern with improved lithography properties including EL, MEF and LWR when processed by lithography.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: January 15, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takayuki Fujiwara, Masaki Ohashi, Ryosuke Taniguchi
  • Sulfonium compound, resist composition, and pattern forming process
    Patent number: 10173975
    Abstract: A sulfonium compound having formula (1) is provided wherein R1, R2 and R3 are a C1-C20 monovalent hydrocarbon group which may contain a heteroatom, p=0-5, q=0-5, and r=0-4. A resist composition comprising the sulfonium compound is processed by lithography to form a resist pattern with improved LWR and pattern collapse.
    Type: Grant
    Filed: October 11, 2017
    Date of Patent: January 8, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Masaki Ohashi, Takayuki Fujiwara, Ryosuke Taniguchi, Kazuya Honda, Takahiro Suzuki
  • Sulfonium compound, resist composition, and patterning process
    Patent number: 10025180
    Abstract: A sulfonium salt containing an acid-eliminatable substituent group which is effective for improving contrast is highly soluble and uniformly dispersible. A resist composition comprising the sulfonium salt as photoacid generator forms a pattern with a high resolution, rectangularity, and reduced LWR.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: July 17, 2018
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Ryo Mitsui, Takayuki Fujiwara, Ryosuke Taniguchi, Koji Hasegawa, Masaki Ohashi
  • SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS
    Publication number: 20180099928
    Abstract: A sulfonium compound having formula (1) is provided wherein R1, R2 and R3 are a C1-C20 monovalent hydrocarbon group which may contain a heteroatom, p=0-5, q=0-5, and r=0-4. A resist composition comprising the sulfonium compound is processed by lithography to form a resist pattern with improved LWR and pattern collapse.
    Type: Application
    Filed: October 11, 2017
    Publication date: April 12, 2018
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Masaki Ohashi, Takayuki Fujiwara, Ryosuke Taniguchi, Kazuya Honda, Takahiro Suzuki
  • SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS
    Publication number: 20180088464
    Abstract: On use of a sulfonium salt of specific structure as PAG, acid diffusion is suppressed. A resist composition comprising the sulfonium salt forms a pattern with improved lithography properties including EL, MEF and LWR when processed by lithography.
    Type: Application
    Filed: September 13, 2017
    Publication date: March 29, 2018
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takayuki Fujiwara, Masaki Ohashi, Ryosuke Taniguchi
  • SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS
    Publication number: 20180059543
    Abstract: A sulfonium salt containing an acid-eliminatable substituent group which is effective for improving contrast is highly soluble and uniformly dispersible. A resist composition comprising the sulfonium salt as photoacid generator forms a pattern with a high resolution, rectangularity, and reduced LWR.
    Type: Application
    Filed: August 30, 2017
    Publication date: March 1, 2018
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Ryo Mitsui, Takayuki Fujiwara, Ryosuke Taniguchi, Koji Hasegawa, Masaki Ohashi
  • NOVEL SULFONIUM COMPOUND, MAKING METHOD, RESIST COMPOSITION, AND PATTERN FORMING PROCESS
    Publication number: 20170329227
    Abstract: A sulfonium compound having formula (1) exerts a satisfactory acid diffusion control function wherein R1, R2 and R3 are a C1-C20 monovalent hydrocarbon group which may contain a heteroatom, p=0-5, q=0-5, and r=0-4. A resist composition comprising the sulfonium compound is processed by lithography to form a resist pattern with improved resolution, LWR, MEF and CDU.
    Type: Application
    Filed: May 9, 2017
    Publication date: November 16, 2017
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Masaki Ohashi, Ryosuke Taniguchi
  • Hemiacetal compound, polymer, resist composition, and patterning process
    Patent number: 9740100
    Abstract: A polymer for resist use is obtainable from a hemiacetal compound having formula (1a) wherein R1 is H, CH3 or CF3, R2 to R4 each are H or a monovalent hydrocarbon group, X1 is a divalent hydrocarbon group, ZZ designates a non-aromatic mono- or polycyclic ring of 4 to 20 carbon atoms having a hemiacetal structure, k1=0 or 1, and k2=0 to 3. A resist composition comprising the polymer displays controlled acid diffusion and low roughness during both positive and negative tone developments.
    Type: Grant
    Filed: February 11, 2016
    Date of Patent: August 22, 2017
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Koji Hasegawa, Masayoshi Sagehashi, Masahiro Fukushima, Ryosuke Taniguchi
  • Onium salt, resist composition, and patterning process
    Patent number: 9703193
    Abstract: An onium salt having an anion moiety of a specific structure is an effective photoacid generator. A resist composition comprising the onium salt has the advantages of compatibility and reduced acid diffusion and forms a pattern with a good balance of sensitivity and MEF, rectangularity, and minimal defects.
    Type: Grant
    Filed: April 27, 2016
    Date of Patent: July 11, 2017
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takayuki Fujiwara, Masaki Ohashi, Ryosuke Taniguchi
  • RESIST COMPOSITION, PATTERN FORMING PROCESS, POLYMER, AND MONOMER
    Publication number: 20170184967
    Abstract: A polymer comprising recurring units containing a specific lactone ring and having an alkyl group on ?-butyrolactone skeleton of fused ring lactone and an alkyl ester substituent group intervening between the lactone structure and the polymer backbone is provided. A resist composition comprising the polymer as base resin is improved in such properties as DOF margin and MEF and quite effective for precise micropatterning.
    Type: Application
    Filed: December 8, 2016
    Publication date: June 29, 2017
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Teppei Adachi, Ryosuke Taniguchi, Koji Hasegawa, Kenji Yamada
  • ONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS
    Publication number: 20160320698
    Abstract: An onium salt having an anion moiety of a specific structure is an effective photoacid generator. A resist composition comprising the onium salt has the advantages of compatibility and reduced acid diffusion and forms a pattern with a good balance of sensitivity and MEF, rectangularity, and minimal defects.
    Type: Application
    Filed: April 27, 2016
    Publication date: November 3, 2016
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takayuki Fujiwara, Masaki Ohashi, Ryosuke Taniguchi
  • Monomer, polymer, resist composition, and patterning process
    Patent number: 9458144
    Abstract: A monomer (1) is prepared by reacting a compound (9) with a base or metal to form a metal enolate reagent, and reacting the metal enolate reagent with an acyloxyketone compound (8). A polymer derived from the monomer is used as base resin to formulate a resist composition, which is shelf stable and displays a high dissolution contrast, controlled acid diffusion and low roughness in forming positive pattern via alkaline development and in forming negative pattern via organic solvent development.
    Type: Grant
    Filed: April 17, 2015
    Date of Patent: October 4, 2016
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takayuki Fujiwara, Masayoshi Sagehashi, Koji Hasegawa, Ryosuke Taniguchi
  • HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
    Publication number: 20160238930
    Abstract: A polymer for resist use is obtainable from a hemiacetal compound having formula (1a) wherein R1 is H, CH3 or CF3, R2 to R4 each are H or a monovalent hydrocarbon group, X1 is a divalent hydrocarbon group, ZZ designates a non-aromatic mono- or polycyclic ring of 4 to 20 carbon atoms having a hemiacetal structure, k1=0 or 1, and k2=0 to 3. A resist composition comprising the polymer displays controlled acid diffusion and low roughness during both positive and negative tone developments.
    Type: Application
    Filed: February 11, 2016
    Publication date: August 18, 2016
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Koji Hasegawa, Masayoshi Sagehashi, Masahiro Fukushima, Ryosuke Taniguchi
  • Monomer, polymer, resist composition, and patterning process
    Patent number: 9256127
    Abstract: A polymer for resist use is obtainable from a monomer having formula (1) wherein R1 is H, CH3 or CF3, R2 and R3 each are H or a monovalent hydrocarbon group, X1 is a divalent hydrocarbon group, k1=0 or 1, and Z forms a 5 or 6-membered alicyclic ring. A resist composition comprising the polymer is shelf stable and displays a high dissolution contrast, controlled acid diffusion and low roughness during both alkaline development and organic solvent development.
    Type: Grant
    Filed: April 28, 2015
    Date of Patent: February 9, 2016
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Masayoshi Sagehashi, Takayuki Fujiwara, Koji Hasegawa, Ryosuke Taniguchi
  • Acid generator, chemically amplified resist composition, and patterning process
    Patent number: 9223205
    Abstract: There is disclosed an acid generator generating a sulfonic acid represented by the following general formula (1) in response to high-energy beam or heat: As a result, there is provided a novel acid generator which is suitably used as an acid generator for a resist composition, which solves the problems of exposure margin and MEF particularly without degradation of resolution and can be effectively and widely used, a chemically amplified resist composition using the same, and a patterning process.
    Type: Grant
    Filed: February 19, 2013
    Date of Patent: December 29, 2015
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Masaki Ohashi, Takayuki Nagasawa, Ryosuke Taniguchi