Patents by Inventor Ryota Fukuyama
Ryota Fukuyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9437573Abstract: A semiconductor device which includes a first semiconductor chip 10, a first electrode 12 formed on the first semiconductor chip 10, a second semiconductor chip 20 to which the first semiconductor chip 10 is mounted, a second electrode 22 with a protrusion 24, which is formed on the second semiconductor chip 20, and a solder bump 14 which bonds the first electrode 12 and the second electrode 22 to cover at least a part of a side surface of the protrusion 24, and a method for manufacturing thereof are provided.Type: GrantFiled: December 20, 2013Date of Patent: September 6, 2016Assignee: CYPRESS SEMICONDUCTOR CORPORATIONInventors: Naomi Masuda, Masataka Hoshino, Ryota Fukuyama
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Patent number: 9418940Abstract: Methods and structures for stack type semiconductor packaging are disclosed. In one embodiment, a semiconductor device includes a semiconductor chip mounted onto a substrate, a first resin molding portion formed on the substrate for sealing the semiconductor chip, and a through metal mounted on the substrate so as to pierce the first resin molding portion around the semiconductor chip. The semiconductor device further comprises an upper metal electrically coupled with the through metal and mounted on the first resin molding portion to extend from the through metal toward the semiconductor chip along an upper surface of the first resin molding portion, where the through metal and the upper metal are formed into an integral structure.Type: GrantFiled: April 25, 2008Date of Patent: August 16, 2016Assignee: Cypress Semiconductor CorporationInventors: Masataka Hoshino, Masahiko Harayama, Koji Taya, Naomi Masuda, Masanori Onodera, Ryota Fukuyama
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Patent number: 9293441Abstract: The present invention provides a semiconductor device that includes: stacked semiconductor chips, each semiconductor chip including a semiconductor substrate and a first insulating layer that is provided on side faces of the semiconductor substrate and has concavities formed on side faces thereof; first metal layers that are provided in center portions of inner side faces of the concavities; and second metal layers that are provided in the concavities and are connected to the first metal layers formed on each semiconductor chip. The present invention also provides a method of manufacturing the semiconductor device.Type: GrantFiled: October 4, 2011Date of Patent: March 22, 2016Assignee: CYPRESS SEMICONDUCTOR CORPORATIONInventors: Masataka Hoshino, Junichi Kasai, Kouichi Meguro, Ryota Fukuyama, Yasuhiro Shinma, Koji Taya, Masanori Onodera, Naomi Masuda
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Publication number: 20140113411Abstract: A semiconductor device which includes a first semiconductor chip 10, a first electrode 12 formed on the first semiconductor chip 10, a second semiconductor chip 20 to which the first semiconductor chip 10 is mounted, a second electrode 22 with a protrusion 24, which is formed on the second semiconductor chip 20, and a solder bump 14 which bonds the first electrode 12 and the second electrode 22 to cover at least a part of a side surface of the protrusion 24, and a method for manufacturing thereof are provided.Type: ApplicationFiled: December 20, 2013Publication date: April 24, 2014Applicant: Spansion LLCInventors: Naomi MASUDA, Masataka HOSHINO, Ryota FUKUYAMA
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Patent number: 8637986Abstract: A semiconductor device which includes a first semiconductor chip 10, a first electrode 12 formed on the first semiconductor chip 10, a second semiconductor chip 20 to which the first semiconductor chip 10 is mounted, a second electrode 22 with a protrusion 24, which is formed on the second semiconductor chip 20, and a solder bump 14 which bonds the first electrode 12 and the second electrode 22 to cover at least a part of a side surface of the protrusion 24, and a method for manufacturing thereof are provided.Type: GrantFiled: October 22, 2008Date of Patent: January 28, 2014Assignee: Spansion LLCInventors: Naomi Masuda, Masataka Hoshino, Ryota Fukuyama
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Publication number: 20120025364Abstract: The present invention provides a semiconductor device that includes: stacked semiconductor chips, each semiconductor chip including a semiconductor substrate and a first insulating layer that is provided on side faces of the semiconductor substrate and has concavities formed on side faces thereof; first metal layers that are provided in center portions of inner side faces of the concavities; and second metal layers that are provided in the concavities and are connected to the first metal layers formed on each semiconductor chip. The present invention also provides a method of manufacturing the semiconductor device.Type: ApplicationFiled: October 4, 2011Publication date: February 2, 2012Inventors: Masataka HOSHINO, Junichi KASAI, Kouichi MEGURO, Ryota FUKUYAMA, Yasuhiro SHINMA, Koji TAYA, Masanori ONODERA, Naomi MASUDA
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Patent number: 8030179Abstract: The present invention provides a semiconductor device that includes: stacked semiconductor chips, each semiconductor chip including a semiconductor substrate and a first insulating layer that is provided on side faces of the semiconductor substrate and has concavities formed on side faces thereof; first metal layers that are provided in center portions of inner side faces of the concavities; and second metal layers that are provided in the concavities and are connected to the first metal layers formed on each semiconductor chip. The present invention also provides a method of manufacturing the semiconductor device.Type: GrantFiled: September 9, 2009Date of Patent: October 4, 2011Assignee: Spansion, LLCInventors: Masataka Hoshino, Junichi Kasai, Kouichi Meguro, Ryota Fukuyama, Yasuhiro Shinma, Koji Taya, Masanori Onodera, Naomi Masuda
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Publication number: 20090325346Abstract: The present invention provides a semiconductor device that includes: stacked semiconductor chips, each semiconductor chip including a semiconductor substrate and a first insulating layer that is provided on side faces of the semiconductor substrate and has concavities formed on side faces thereof; first metal layers that are provided in center portions of inner side faces of the concavities; and second metal layers that are provided in the concavities and are connected to the first metal layers formed on each semiconductor chip. The present invention also provides a method of manufacturing the semiconductor device.Type: ApplicationFiled: September 9, 2009Publication date: December 31, 2009Inventors: Masataka HOSHINO, Junichi KASAI, Kouichi MEGURO, Ryota FUKUYAMA, Yasuhiro SHINMA, Koji TAYA, Masanori ONODERA, Naomi MASUDA
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Publication number: 20090302469Abstract: A semiconductor device which includes a first semiconductor chip 10, a first electrode 12 formed on the first semiconductor chip 10, a second semiconductor chip 20 to which the first semiconductor chip 10 is mounted, a second electrode 22 with a protrusion 24, which is formed on the second semiconductor chip 20, and a solder bump 14 which bonds the first electrode 12 and the second electrode 22 to cover at least a part of a side surface of the protrusion 24, and a method for manufacturing thereof are provided.Type: ApplicationFiled: October 22, 2008Publication date: December 10, 2009Inventors: Naomi MASUDA, Masataka HOSHINO, Ryota FUKUYAMA
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Patent number: 7605457Abstract: The present invention provides a semiconductor device that includes: stacked semiconductor chips, each semiconductor chip including a semiconductor substrate and a first insulating layer that is provided on side faces of the semiconductor substrate and has concavities formed on side faces thereof; first metal layers that are provided in center portions of inner side faces of the concavities; and second metal layers that are provided in the concavities and are connected to the first metal layers formed on each semiconductor chip. The present invention also provides a method of manufacturing the semiconductor device.Type: GrantFiled: December 7, 2006Date of Patent: October 20, 2009Assignee: Spansion LLCInventors: Masataka Hoshino, Junichi Kasai, Kouichi Meguro, Ryota Fukuyama, Yasuhiro Shinma, Koji Taya, Masanori Onodera, Naomi Masuda
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Publication number: 20090115044Abstract: Methods and structures for stack type semiconductor packaging are disclosed. In one embodiment, a semiconductor device includes a semiconductor chip mounted onto a substrate, a first resin molding portion formed on the substrate for sealing the semiconductor chip, and a through metal mounted on the substrate so as to pierce the first resin molding portion around the semiconductor chip. The semiconductor device further comprises an upper metal electrically coupled with the through metal and mounted on the first resin molding portion to extend from the through metal toward the semiconductor chip along an upper surface of the first resin molding portion, where the through metal and the upper metal are formed into an integral structure.Type: ApplicationFiled: April 25, 2008Publication date: May 7, 2009Inventors: Masataka HOSHINO, Masahiko HARAYAMA, Koji TAYA, Naomi MASUDA, Masanori ONODERA, Ryota FUKUYAMA
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Publication number: 20070145579Abstract: The present invention provides a semiconductor device that includes: stacked semiconductor chips, each semiconductor chip including a semiconductor substrate and a first insulating layer that is provided on side faces of the semiconductor substrate and has concavities formed on side faces thereof; first metal layers that are provided in center portions of inner side faces of the concavities; and second metal layers that are provided in the concavities and are connected to the first metal layers formed on each semiconductor chip. The present invention also provides a method of manufacturing the semiconductor device.Type: ApplicationFiled: December 7, 2006Publication date: June 28, 2007Inventors: Masataka Hoshino, Junichi Kasai, Kouichi Meguro, Ryota Fukuyama, Yasuhiro Shinma, Koji Taya, Masanori Onodera, Naomi Masuda