Patents by Inventor Ryota SAKAIDA
Ryota SAKAIDA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230317746Abstract: An imaging device including: a photoelectric converter that converts light into a charge; a first diffusion region of a first conductivity type to which the charge is input; a second diffusion region of the first conductivity type; a first plug that has a first surface directly connected to the first diffusion region; and a second plug that has a second surface directly connected to the second diffusion region, where an area of the second surface of the second plug is larger than an area of the first surface of the first plug in a plan view.Type: ApplicationFiled: June 6, 2023Publication date: October 5, 2023Inventors: Yoshihiro SATO, Yoshinori TAKAMI, Ryota SAKAIDA
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Patent number: 11715748Abstract: An imaging device includes: a semiconductor substrate including a first diffusion region of a first conductivity type and a second diffusion region of the first conductivity type; a first plug that is connected to the first diffusion region and that contains a semiconductor; a second plug that is connected to the second diffusion region and that contains a semiconductor; and a photoelectric converter that is electrically connected to the first plug. An area of the second plug is larger than an area of the first plug in a plan view.Type: GrantFiled: March 3, 2021Date of Patent: August 1, 2023Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Yoshihiro Sato, Yoshinori Takami, Ryota Sakaida
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Publication number: 20230232644Abstract: An imaging device includes a photoelectric conversion film and an electrode. The photoelectric conversion film converts light to charge. The electrode collects the charge. The electrode includes two or more layers. The two or more layers include a first layer containing tantalum nitride. An uppermost layer among the two or more layers contains a metal nitride.Type: ApplicationFiled: March 13, 2023Publication date: July 20, 2023Inventors: SHUNSUKE ISONO, YUUKO TOMEKAWA, RYOTA SAKAIDA
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Publication number: 20230097421Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region. Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.Type: ApplicationFiled: December 2, 2022Publication date: March 30, 2023Inventors: Yoshihiro SATO, Satoshi SHIBATA, Ryota SAKAIDA
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Patent number: 11570383Abstract: An imaging device includes: pixels that are disposed in a row direction and a column direction and that include a first pixel and a second pixel adjacent to the first pixel along the row direction; a shield electrode located between the first pixel and the second pixel; a first shield via that extends from the shield electrode. The first pixel includes: a first photoelectric conversion layer that converts incident light to generate charge; and a first pixel electrode that collects the charge generated thereby. The second pixel includes: a second photoelectric conversion layer that converts incident light to generate charge; and a second pixel electrode that collects the charge generated thereby. The shield electrode is electrically isolated from the first pixel electrode and the second pixel electrode, and the first shield via is located between the first pixel electrode and the second pixel electrode in a plan view.Type: GrantFiled: March 26, 2021Date of Patent: January 31, 2023Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Shunsuke Isono, Tatsunori Momose, Ryota Sakaida
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Patent number: 11545525Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.Type: GrantFiled: September 4, 2020Date of Patent: January 3, 2023Assignee: PANASONIC INTFLLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Yoshihiro Sato, Satoshi Shibata, Ryota Sakaida
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Publication number: 20210218912Abstract: An imaging device includes: pixels that are disposed in a row direction and a column direction and that include a first pixel and a second pixel adjacent to the first pixel along the row direction; a shield electrode located between the first pixel and the second pixel; a first shield via that extends from the shield electrode. The first pixel includes: a first photoelectric conversion layer that converts incident light to generate charge; and a first pixel electrode that collects the charge generated thereby. The second pixel includes: a second photoelectric conversion layer that converts incident light to generate charge; and a second pixel electrode that collects the charge generated thereby. The shield electrode is electrically isolated from the first pixel electrode and the second pixel electrode, and the first shield via is located between the first pixel electrode and the second pixel electrode in a plan view.Type: ApplicationFiled: March 26, 2021Publication date: July 15, 2021Inventors: SHUNSUKE ISONO, TATSUNORI MOMOSE, RYOTA SAKAIDA
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Publication number: 20210193714Abstract: An imaging device includes: a semiconductor substrate including a first diffusion region of a first conductivity type and a second diffusion region of the first conductivity type; a first plug that is connected to the first diffusion region and that contains a semiconductor; a second plug that is connected to the second diffusion region and that contains a semiconductor; and a photoelectric converter that is electrically connected to the first plug. An area of the second plug is larger than an area of the first plug in a plan view.Type: ApplicationFiled: March 3, 2021Publication date: June 24, 2021Inventors: Yoshihiro SATO, Yoshinori TAKAMI, Ryota SAKAIDA
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Patent number: 11024665Abstract: An imaging device according to one aspect of the present disclosure includes: a semiconductor substrate; and pixels. Each of the pixels includes: a photoelectric converter that converts incident light into electric charge; a diffusion region provided in the semiconductor substrate and electrically connected to the photoelectric converter; a first transistor including a gate, and the diffusion region as one of a source and a drain; and a plug that is directly connected to the diffusion region, is electrically connected to the photoelectric converter, and includes a semiconductor. The height of the plug and the height of the gate from the surface of the semiconductor substrate are equal to each other.Type: GrantFiled: October 11, 2019Date of Patent: June 1, 2021Assignees: PANASONIC CORPORATION, TOWERJAZZ PANASONIC SEMICONDUCTOR CO., LTD.Inventors: Ryota Sakaida, Yoshihiro Sato, Kosaku Saeki, Hideki Doshita, Takeshi Yamashita
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Patent number: 10985197Abstract: An imaging device includes: a semiconductor substrate including a first diffusion region of a first conductivity type and a second diffusion region of the first conductivity type; a first plug that is connected to the first diffusion region and that contains a semiconductor; a second plug that is connected to the second diffusion region and that contains a semiconductor; and a photoelectric converter that is electrically connected to the first plug. An area of the second plug is larger than an area of the first plug in a plan view.Type: GrantFiled: September 27, 2019Date of Patent: April 20, 2021Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Yoshihiro Sato, Yoshinori Takami, Ryota Sakaida
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Publication number: 20210074768Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.Type: ApplicationFiled: September 4, 2020Publication date: March 11, 2021Inventors: Yoshihiro SATO, Satoshi SHIBATA, Ryota SAKAIDA
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Publication number: 20200119069Abstract: An imaging device includes: a semiconductor substrate including a first diffusion region of a first conductivity type and a second diffusion region of the first conductivity type; a first plug that is connected to the first diffusion region and that contains a semiconductor; a second plug that is connected to the second diffusion region and that contains a semiconductor; and a photoelectric converter that is electrically connected to the first plug. An area of the second plug is larger than an area of the first plug in a plan view.Type: ApplicationFiled: September 27, 2019Publication date: April 16, 2020Inventors: YOSHIHIRO SATO, YOSHINORI TAKAMI, RYOTA SAKAIDA
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Publication number: 20200119098Abstract: An imaging device according to one aspect of the present disclosure includes: a semiconductor substrate; and pixels. Each of the pixels includes: a photoelectric converter that converts incident light into electric charge; a diffusion region provided in the semiconductor substrate and electrically connected to the photoelectric converter; a first transistor including a gate, and the diffusion region as one of a source and a drain; and a plug that is directly connected to the diffusion region, is electrically connected to the photoelectric converter, and includes a semiconductor. The height of the plug and the height of the gate from the surface of the semiconductor substrate are equal to each other.Type: ApplicationFiled: October 11, 2019Publication date: April 16, 2020Inventors: Ryota SAKAIDA, Yoshihiro SATO, Kosaku SAEKI, Hideki DOSHITA, Takeshi YAMASHITA
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Patent number: 10446549Abstract: An imaging device includes: a semiconductor substrate including a first impurity region and a second impurity region; a first insulating layer on a portion of a surface of the semiconductor substrate; a second insulating layer on another portion of the surface of the semiconductor substrate, a thickness of the first insulating layer being greater than a thickness of the second insulating layer; a first transistor including: a first gate electrode facing the surface of the semiconductor substrate via the first insulating layer; the first impurity region as one of a source and a drain; and the second impurity region as the other of the source and the drain; and a photoelectric converter electrically connected to the first impurity region. The first insulating layer covers the first impurity region, and the second insulating layer covers the second impurity region.Type: GrantFiled: April 15, 2019Date of Patent: October 15, 2019Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Yoshihiro Sato, Ryota Sakaida, Satoshi Shibata, Taiji Noda
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Publication number: 20190244959Abstract: An imaging device includes: a semiconductor substrate including a first impurity region and a second impurity region; a first insulating layer on a portion of a surface of the semiconductor substrate; a second insulating layer on another portion of the surface of the semiconductor substrate, a thickness of the first insulating layer being greater than a thickness of the second insulating layer; a first transistor including: a first gate electrode facing the surface of the semiconductor substrate via the first insulating layer; the first impurity region as one of a source and a drain; and the second impurity region as the other of the source and the drain; and a photoelectric converter electrically connected to the first impurity region. The first insulating layer covers the first impurity region, and the second insulating layer covers the second impurity region.Type: ApplicationFiled: April 15, 2019Publication date: August 8, 2019Inventors: Yoshihiro SATO, Ryota SAKAIDA, Satoshi SHIBATA, Taiji NODA
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Patent number: 10304828Abstract: An imaging device includes: a semiconductor substrate; a first insulating layer covering a surface of the semiconductor substrate, the first insulating layer including first and second portions, a thickness of the first portion being greater than a thickness of the second portion; and an imaging cell. The imaging cell includes: a first transistor including a first gate insulating layer and an impurity region in the semiconductor substrate as one of a source and a drain; a second transistor including a gate electrode and a second gate insulating layer; and a photoelectric converter electrically connected to the gate electrode and the impurity region. The first portion covers a portion of the impurity region, the portion being exposed to the surface of the semiconductor substrate. The first gate insulating layer is a part of the first portion. The second gate insulating layer is a part of the second portion.Type: GrantFiled: September 7, 2017Date of Patent: May 28, 2019Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Yoshihiro Sato, Ryota Sakaida, Satoshi Shibata, Taiji Noda
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Publication number: 20180083004Abstract: An imaging device includes: a semiconductor substrate; a first insulating layer covering a surface of the semiconductor substrate, the first insulating layer including first and second portions, a thickness of the first portion being greater than a thickness of the second portion; and an imaging cell. The imaging cell includes: a first transistor including a first gate insulating layer and an impurity region in the semiconductor substrate as one of a source and a drain; a second transistor including a gate electrode and a second gate insulating layer; and a photoelectric converter electrically connected to the gate electrode and the impurity region. The first portion covers a portion of the impurity region, the portion being exposed to the surface of the semiconductor substrate. The first gate insulating layer is a part of the first portion. The second gate insulating layer is a part of the second portion.Type: ApplicationFiled: September 7, 2017Publication date: March 22, 2018Inventors: YOSHIHIRO SATO, RYOTA SAKAIDA, SATOSHI SHIBATA, TAIJI NODA
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Patent number: 9883131Abstract: An imaging device includes a photoelectric converter that generates charge; a first charge transfer channel having a first end electrically connected to the photoelectric converter and a second end, and transferring the charge in a direction from the first end to the second end; a second charge transfer channel diverging from the first charge transfer channel at a first position and transferring a first part of the charge; a third charge transfer channel diverging from the first charge transfer channel at a second position different from the first position in the direction and transferring a part of the second part of the charge; and first and second charge accumulators that accumulate at least a part of the first and second part of the charge respectively. The imaging device does not include a gate that switches between cutoff and transfer of charge, in the first charge transfer channel.Type: GrantFiled: June 23, 2016Date of Patent: January 30, 2018Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Sanshiro Shishido, Ryota Sakaida, Yoshiyuki Matsunaga
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Patent number: 9735204Abstract: Each imaging pixel provided in a solid-state imaging device includes a charge accumulation part which is a diffusion region formed in a substrate, a gate electrode formed lateral to the charge accumulation part on the substrate, an insulating film formed on the charge accumulation part, and a contact plug connected to the charge accumulation part so as to penetrate the insulating film and made of semiconductor. The contact plug is, at a lower part thereof, embedded in the insulating film, and is, at an upper part thereof, exposed through the insulating film. Silicide is formed on the upper part of the contact plug, and the charge accumulation part and the gate electrode are covered by the insulating film.Type: GrantFiled: November 25, 2014Date of Patent: August 15, 2017Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Ryota Sakaida, Nobuyoshi Takahashi, Kosaku Saeki
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Publication number: 20170006241Abstract: An imaging device includes a photoelectric converter that generates charge; a first charge transfer channel having a first end electrically connected to the photoelectric converter and a second end, and transferring the charge in a direction from the first end to the second end; a second charge transfer channel diverging from the first charge transfer channel at a first position and transferring a first part of the charge; a third charge transfer channel diverging from the first charge transfer channel at a second position different from the first position in the direction and transferring a part of the second part of the charge; and first and second charge accumulators that accumulate at least a part of the first and second part of the charge respectively. The imaging device does not include a gate that switches between cutoff and transfer of charge, in the first charge transfer channel.Type: ApplicationFiled: June 23, 2016Publication date: January 5, 2017Inventors: SANSHIRO SHISHIDO, RYOTA SAKAIDA, YOSHIYUKI MATSUNAGA