Abstract: An image forming apparatus includes a developing member, a first detection processing portion, and an acquisition processing portion. The developing member conveys developer to a facing portion between the developing member and the image-carrying member. The first detection processing portion detects a first development current for each of a plurality of specific voltages with different DC voltage values applied to the developing member, the first development current flowing, in response to application of the specific voltages, through the facing portion including the developer and a specific exposed area, formed by the light emitting portion, on the image-carrying member. The acquisition processing portion acquires a potential value of the specific exposed area based on the DC voltage values of the specific voltages and current values of the first development current, detected by the first detection processing portion, corresponding to the respective specific voltages.

Abstract: A gas barrier film includes a base material containing a polyethylene as a main resin component and an inorganic oxide layer formed on a first surface side of the base material. The birefringence AN of the first surface calculated based on measurement by a parallel Nicol rotation method is 0 or more and 0.007 or less, and the proportion of the polyethylene in the entire gas barrier film is 90 mass % or more.

Abstract: A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile semiconductor memory device that has a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state.

Abstract: The present invention provides a foam having a surface which solates or gelates after absorption of water and appropriately absorbs the water. The foam is prepared by a foam reaction of a mixture comprising at least one polyol, a compound having at least one isocyanate group, and a hydrophilic polymer.

Abstract: A fixing unit or device that can be used in an image forming apparatus includes a first heater element that is formed of a material that increases in electrical resistance with increases in temperature. A controller of the fixing unit is configured to vary a duty ratio of electric power applied to the first heater element during a start-up operation in which the temperature of the first heater element is raised to a target operating temperature. By varying the duty ratio during the start-up operation, changes in the resistance of the first heater element with the heating can be compensated. For example, the duty ratio can be increased during the course of the start-up to achieve the target operating temperature faster.

Abstract: Provided is a relay server capable of reducing network traffic when collecting large amounts of sensor data from a large number of sensor terminals. A relay server that collects sensor data from a plurality of sensor terminals and uploads the sensor data to a central server via a network includes a data collection unit that collects the sensor data from the plurality of sensor terminals, a relay data creation unit that calculates a presence of spatial overlaps between the collected sensor data, removes overlaps between the sensor data, and creates relay data integrating the sensor data, and an upload unit that uploads the relay data to the central server.

Abstract: Provided is a method for manufacturing a titanium dioxide semiconductor. The method does not require a complicated pretreatment and makes it possible to easily manufacture a titanium dioxide semiconductor with general-purpose devices. The method for manufacturing a titanium dioxide semiconductor includes: a first immersion step of immersing a substrate containing titanium in hydrogen peroxide water at 70° C. or higher and 90° C. or lower for 1 hour or more and 28 hours or less, and a second immersion step. The second immersion step includes a normal temperature water immersion step of immersing the substrate subjected to the first immersion step in normal temperature water at 10° C. or higher and 30° C. or lower for 24 hours or more and 48 hours or less, and a hot water immersion step of immersing the substrate subjected to the normal temperature water immersion step in hot water at 70° C. or higher and 90° C. or lower for 24 hours or more and 96 hours or less.

Abstract: A semiconductor device includes: a substrate; a source region formed on a main surface of the substrate; a well region electrically connected to the source region; a drift region in contact with the well region; a drain region in contact with the drift region; a first electrode electrically connected to the source region; a second electrode electrically connected to the drain region; a third electrode formed in contact with the source region, the well region, and the drift region through an insulating film; and a parasitic capacitance reduction region formed in contact with the source region and in contact with the third electrode through the insulating film and having a higher resistance value than that of the source region.

Abstract: A semiconductor device includes: a substrate; a source region formed on a main surface of the substrate; a well region electrically connected to the source region; a drift region in contact with the well region; a drain region in contact with the drift region; a first electrode electrically connected to the source region; a second electrode electrically connected to the drain region; a third electrode formed in contact with the source region, the well region, and the drift region through an insulating film; and a parasitic capacitance reduction region formed in contact with the source region and in contact with the third electrode through the insulating film and having a higher resistance value than that of the source region.

Abstract: This multilayer body is provided with a base layer, an intermediate layer, a heat seal layer, a first adhesive layer that is provided between the base layer and the intermediate layer, and a second adhesive layer that is provided between the intermediate layer and the heat seal layer. The base layer, the intermediate layer, and the heat seal layer are configured to include polyethylene. In a case where the base layer is a stretched polyethylene film, the intermediate layer is an unstretched polyethylene film, and in a case where the intermediate layer is a stretched polyethylene film, the base layer is an unstretched polyethylene film. The proportion of polyethylene in the multilayer body is 90% by mass or more.

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

Abstract: A method for manufacturing a semiconductor device includes forming a trench on a first main surface of a conductive semiconductor substrate. The method includes laminating conductive layers, each of which is a first or a second conductive layer, along a surface normal direction of a side surface of the trench, while forming dielectric layers between a conductive layer closest to the side surface of the trench and the side surface of the trench, and between the corresponding conductive layers; and removing the first conductive layer and the dielectric layer, which are formed on a bottom portion of the trench, to electrically connect the second conductive layer to the semiconductor substrate at the bottom portion of the trench. After a portion of the first main surface, the portion being outside of the trench, is covered with an insulating protective film, the first conductive layer and the dielectric layer are removed.

Abstract: A packaging material for packaging contents containing fragrances includes a first polyolefin layer, an inorganic deposition layer, a gas barrier coating layer, and a second polyolefin layer having heat-sealing properties, in this order.

Abstract: A semiconductor device includes: a conductive semiconductor substrate in which a trench is formed on the first main surface; a plurality of conductive layers, each of which is either a first conductive layer or a second conductive layer, which are laminated on one another along a surface normal direction of a side surface of the trench; and dielectric layers arranged between a conductive layer closest to the side surface of the trench among the plurality of conductive layers and the side surface of the trench, and between the plurality of corresponding conductive layers. The first conductive layer is electrically insulated from the semiconductor substrate, and the semiconductor substrate that electrically connects to the second conductive layer inside the trench electrically connects to the second electrode.

Abstract: A gas barrier laminate according to an aspect of the present disclosure has a structure having a base material layer including a polyolefin, an undercoat layer, an inorganic oxide layer, a gas barrier adhesive layer, and a resin layer including a polyolefin laminated therein in this order.

Abstract: A learning device includes a memory; and a processor configured to execute answer generation means for taking data including text, and a question text related to the data as inputs; creating, by using a model parameter of a neural network, a token sequence that takes visual information in the data into consideration, and generating an answer text to the question text, based on the created token sequence; and learning means for learning the model parameter by using the answer text and a correct answer text to the question text.

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

Abstract: A semiconductor device includes: a substrate (10); a semiconductor layer (20) disposed on a main surface of this substrate (10); and a first main electrode (30) and a second main electrode (40), which are disposed on the substrate (10) separately from each other with the semiconductor layer (20) sandwiched therebetween and are individually end portions of a current path of a main current flowing in an on-state. The semiconductor layer (20) includes: a first conductivity-type drift region (21) through which a main current flows; a second conductivity-type column region (22) that is disposed inside the drift region (21) and extends in parallel to a current path; and an electric field relaxation region (23) that is disposed in at least a part between the drift region (21) and the column region (22) and is either a low-concentration region in which an impurity concentration is lower than in the same conductivity-type adjacent region or a non-doped region.

Abstract: A semiconductor device includes: a drift region of a first conductive type including a contact section and extension sections extending along the main surface of a substrate; column regions of a second conductive type which alternate with the extension sections in a perpendicular direction to the extension direction of the extension sections and each includes an end connecting to the contact section; a well region of a second conductive type which connects to the other end of each column region and tips of the extension sections; and electric field relaxing electrodes which are provided above at least some of residual pn junctions with an insulating film interposed therebetween. Herein, the residual pn junctions are pn junctions other than voltage holding pn junctions formed in interfaces between the extension sections and the column regions.