Abstract: A method for manufacturing a semiconductor substrate, includes: directly or indirectly applying a composition for forming a resist underlayer film to a substrate to form a resist under film directly or indirectly on the substrate; applying a composition for forming a resist film to the resist underlayer film to form a resist film on the resist underlayer film; exposing the resist film to radiation; and developing the exposed resist film by a developer. The composition for forming a resist underlayer film includes: a polymer; an onium salt that is capable of generating at least one polar group selected from the group consisting of a carboxy group and a hydroxy group by radiation or heat; and a solvent.

Abstract: A radiation-sensitive resin composition includes: a first polymer including a structural unit including an acid-labile group; a second polymer including a structural unit represented by formula (1); and a radiation-sensitive acid generator. In the formula (1), A represents an oxygen atom or a sulfur atom; a sum of m and n is 2 or 3, wherein m is 1 or 2, and n is 1 or 2; X represents a single bond or a divalent organic group having 1 to 20 carbon atoms; and R1 represents a monovalent organic group including a fluorine atom.

Abstract: A coil includes a coil unit provided with a wire and a self-melting layer formed on surfaces of the wire, and a resin member affixed to the wire. The wire is adhered and affixed to the resin member by the self-melting layer.

Abstract: A coil includes a coil unit provided with a wire and a self-melting layer formed on surfaces of the wire, and a resin member affixed to the wire. The wire is adhered and affixed to the resin member by the self-melting layer.