Abstract: A diffraction condition simulation device capable of calculating the UB matrix and the rotation matrix R and also their multiplication RUB, thereby obtaining and displaying any Bragg reflection conditions of any Bragg reflections desired by an operator of said device. The Bragg reflection conditions are useful for structure analysis and structure evaluation of any crystal samples.

Abstract: A stress of a c-axis-oriented specimen of a tetragonal polycrystal is measured using X-ray diffraction under the assumption of a plane stress state. An X-ray optical system is set in the location of ?=0°, 45° or 90°. An X-ray diffracted at a crystal plane (the direction of the normal thereto is the direction of an angle of ?) with the Miller indices (hkl) is detected. A diffraction angle ? in a strain state is measured in the vicinity of a Bragg's angle ?0 in a non-strain state. Strains ? with respect to a plurality of ? are calculated from the difference between the measurement values ? and the Bragg's angle ?0. Specific stress calculation formulae are determined with respect to the tetragonal system having the Laue symmetry 4/mmm. The stress is calculated from the slope of the linear line of plotted measurement results.

Abstract: A stress of a c-axis-oriented specimen of a tetragonal polycrystal is measured using. X-ray diffraction under the assumption of a plane stress state. An X-ray optical system is set in the location of ?=0°, 45° or 90°. An X-ray diffracted at a crystal plane (the direction of the normal thereto is the direction of an angle of ?) with the Miller indices (hkl) is detected. A diffraction angle ? in a strain state is measured in the vicinity of a Bragg's angle ?0 in a non-strain state. Strains ? with respect to a plurality of ? are calculated from the difference between the measurement values ? and the Bragg's angle ?0. Specific stress calculation formulae are determined with respect to the tetragonal system having the Laue symmetry 4/mmm. The stress is calculated from the slope of the linear line of plotted measurement results.

Abstract: A method for measuring a pole of a sample, using a reflection method, is effective substantially over all measurement regions ranging from the region of high-tilting-angle ? of a conventional pole measuring to the in-plane diffraction region corresponding to low-tilting-angle ?.

Abstract: A stress of a c-axis-oriented specimen of a tetragonal polycrystal is measured using X-ray diffraction under the assumption of a plane stress state. An X-ray optical system is set in the location of ?=0°, 45° or 90°. An X-ray diffracted at a crystal plane (the direction of the normal thereto is the direction of an angle of ?) with the Miller indices (hkl) is detected. A diffraction angle ? in a strain state is measured in the vicinity of a Bragg's angle ?0 in a non-strain state. Strains ? with respect to a plurality of ? are calculated from the difference between the measurement values ? and the Bragg's angle ?0. Specific stress calculation formulae are determined with respect to the tetragonal system having the Laue symmetry 4/mmm. The stress is calculated from the slope of the linear line of plotted measurement results.

Abstract: A stress of a c-axis-oriented specimen of a tetragonal polycrystal is measured using X-ray diffraction under the assumption of a plane stress state. An X-ray optical system is set in the location of &phgr;=0°, 45° or 90°. An X-ray diffracted at a crystal plane (the direction of the normal thereto is the direction of an angle of &psgr;) with the Miller indices (hkl) is detected. A diffraction angle &thgr; in a strain state is measured in the vicinity of a Bragg's angle &thgr;0 in a non-strain state. Strains &egr; with respect to a plurality of &psgr; are calculated from the difference between the measurement values &thgr; and the Bragg's angle &thgr;0. Specific stress calculation formulae are determined with respect to the tetragonal system having the Laue symmetry 4/mmm. The stress is calculated from the slope of the linear line of plotted measurement results.

Abstract: On the basis of a preset tilting angle (&agr;) of the sample (S), an incident angle (&ohgr;) of an X-ray with respect to the surface (Sa) of the sample is set to a predetermined position corresponding to the pole measuring position when the sample (Sa) is tilted by the tilting angle (&agr;), by rotating the sample (Sa) about a predetermined axis (&OHgr; axis) passing through a predetermined origin (O). Also, on the basis of the tilting angle (&agr;), an X-ray detector (1) is revolved by an angle (2&thgr;) about the predetermined axis (&OHgr; axis) along a first plane (P1) perpendicular to the predetermined axis (&OHgr; axis) and also revolved by an angle (2&OHgr;102 ) about the origin (O) along a second plane (P2) including the predetermined axis (&OHgr; axis) and perpendicular to the first plane (P1), whereby the X-ray detector (1) is disposed at a predetermined position corresponding to the pole measuring position when the sample (S) is tilted by the tilting angle (&agr;).

Abstract: A novel diffraction condition simulation device capable of calculating the UB matrix and the rotation matrix R and also their multiplication RUB, thereby obtaining and displaying any Bragg reflection conditions of any Bragg reflections desired by an operator of said device, which are useful for structure analysis and structure evaluation of any crystal samples.