Abstract: A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrode for holding an object to be treated is located inside the container. The microwave radiating surface of the antenna and the surface of the object to be treated with plasma are positioned in parallel and opposite to each other. A wall section of the container other than that constituting the first dielectric plate is composed of a member of a material having electrical conductivity higher than that of aluminum, or the internal surface of the wall section is covered with the member.

Abstract: A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrode for holding an object to be treated is located inside the container. The microwave radiating surface of the antenna and the surface of the object to be treated with plasma are positioned in parallel and opposite to each other. A wall section of the container other than that constituting the first dielectric plate is composed of a member of a material having electrical conductivity higher than that of aluminum, or the internal surface of the wall section is covered with the member.

Abstract: The plasma process apparatus is capable of uniformalizing the density of a plasma generated thereby and a self-bias voltage associated therewith. This apparatus include two parallel plates electrodes I and II, one of electrodes I and II being configured for carrying a substrate to be plasma processed. The apparatus further includes a magnetic field applying means for applying a magnetic field horizontal and one-directional to a surface of the substrate. An additional element of the apparatus is a single auxiliary electrode positioned around the periphery of electrode I and having high-frequency power applied thereto. The alignment of the electrodes is such that they define a space where a plasma for use in processing the substrate is to be excited.

Abstract: A plasma device which is provided with a container (100), a gas supply system, and an exhaust system. The container (100) is composed of a first dielectric plate (102) made of a material capable of transmitting microwaves. An antenna (201) for radiating microwaves is located on the outside of the container (100), and an electrode (109) for holding an object (104) to be treated is located inside the container (100). The microwave radiating surface of the antenna (201) and the surface of the object (104) to be treated with plasma are positioned in parallel and opposite to each other. A wall section of the container (100) other than that constituting the first dielectric plate (102) is composed of a member of a material having electrical conductivity higher than that of aluminium, or the internal surface of the wall section is covered with the member.

Abstract: A semiconductor arithmetic circuit which compares the magnitudes of a plurality of data with each other in real time by using a simple circuit. The semiconductor arithmetic circuit containing one or more neuron MOS transistors each having a plurality of input gate electrodes has an inverter circuit group of a plurality of inverter circuit each of which is constituted of neuron MOS transistors and a means for applying a prescribed signal voltage to at least one first input gate of the inverter circuit.

Abstract: A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrode for holding an object to be treated is located inside the container. The microwave radiating surface of the antenna and the surface of the object to be treated with plasma are positioned in parallel and opposite to each other. A wall section of the container other than that constituting the first dielectric plate is composed of a member of a material having electrical conductivity higher than that of aluminum, or the internal surface of the wall section is covered with the member.