Abstract: A piezoelectric layer made of potassium sodium niobate which is a perovskite type compound represented by the formula ABO3, wherein, in the Raman spectroscopy measurement of the piezoelectric layer which is performed while the piezoelectric layer is rotated in the in-plane direction, the measured intensity of the lattice vibration region of the perovskite type compound in the Raman spectrum obtained in polarized Raman spectroscopy measurement (yx) has a periodicity of approximately 90°, wherein, the polarized Raman spectroscopy measurement (yx) is performed while the piezoelectric layer is rotated in the in-plane direction and Raman scattering light is polarized in a direction perpendicular to that of the incident light.

Abstract: A piezoelectric element exhibiting a small leakage current density and high reliability as compared with a KNN thin film piezoelectric element in the related art is provided. The piezoelectric element is characterized by including a lower electrode, a piezoelectric layer primarily made from potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO3, and an upper electrode, wherein the piezoelectric layer is present between the lower electrode and the upper electrode, and the piezoelectric layer has the value determined by dividing the maximum value of intensity of a diffraction peak, where the angle of 2? is within the range of 21.1°?2??23.4° in the X-ray diffraction pattern (2?/?), by the intensity of a diffraction peak, where 2? is within the range of 30.1°?2??33.3°, of 0.04 or less.

Abstract: The present invention provides a piezoelectric thin film element having a pair of electrode layers and a piezoelectric thin film sandwiched between the pair of electrode layers, wherein the pair of electrode layers are composed of platinum (Pt), oxide particles are contained in at least one of the electrode layers, and the oxide particles are oxide particles of at least one element constituting the piezoelectric thin film or oxide particles of Pt.

Abstract: The present invention provides a piezoelectric thin film element having a pair of electrode layers and a piezoelectric thin film sandwiched between the pair of electrode layers, wherein the pair of electrode layers are composed of platinum (Pt), oxide particles are contained in at least one of the electrode layers, and the oxide particles are oxide particles of at least one element constituting the piezoelectric thin film or oxide particles of Pt.

Abstract: A piezoelectric layer made of potassium sodium niobate which is a perovskite type compound represented by the formula ABO3, wherein, in the Raman spectroscopy measurement of the piezoelectric layer which is performed while the piezoelectric layer is rotated in the in-plane direction, the measured intensity of the lattice vibration region of the perovskite type compound in the Raman spectrum obtained in polarized Raman spectroscopy measurement (yx) has a periodicity of approximately 90°, wherein, the polarized Raman spectroscopy measurement (yx) is performed while the piezoelectric layer is rotated in the in-plane direction and Raman scattering light is polarized in a direction perpendicular to that of the incident light.

Abstract: A piezoelectric element exhibiting a small leakage current density and high reliability as compared with a KNN thin film piezoelectric element in the related art is provided. The piezoelectric element is characterized by including a lower electrode, a piezoelectric layer primarily made from potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO3, and an upper electrode, wherein the piezoelectric layer is present between the lower electrode and the upper electrode, and the piezoelectric layer has the value determined by dividing the maximum value of intensity of a diffraction peak, where the angle of 2? is within the range of 21.1°?2??23.4° in the X-ray diffraction pattern (2?/?), by the intensity of a diffraction peak, where 2? is within the range of 30.1°?2??33.3°, of 0.04 or less.

Abstract: The displacement as an actuator or the sensitivity as a sensor of a piezoelectric element can be increased and, in addition, the electric power consumption can be reduced by providing a thin film of potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO3, as a piezoelectric layer, wherein a crystal orientation of a crystal structure of potassium-sodium niobate has in-plane fourfold symmetry as a whole piezoelectric layer, where a first axis of rotational symmetry is a thickness direction of the piezoelectric layer.

Abstract: The displacement as an actuator or the sensitivity as a sensor of a piezoelectric element can be increased and, in addition, the electric power consumption can be reduced by providing a thin film of potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO3, as a piezoelectric layer, wherein a crystal orientation of a crystal structure of potassium-sodium niobate has in-plane fourfold symmetry as a whole piezoelectric layer, where a first axis of rotational symmetry is a thickness direction of the piezoelectric layer.