Abstract: In a plasma processing apparatus, a high frequency power source is electrically connected to a lower electrode of a supporting table through a power feeding unit. The power feeding unit is surrounded by a conductor pipe outside the chamber. An electrostatic chuck of the supporting table has therein a plurality of heaters. A filter device is provided between the heaters and a heater controller. The filter device includes a plurality of coil groups, each of the coil groups including two or more coils. In each of the coil groups, the two or more coils are arranged such that winding portions of the two or more coils extend in a spiral shape around a central axis and turns of the winding portions are arranged sequentially and repeatedly, and the coil groups are provided coaxially to the central axis to surround the conductor pipe directly below the chamber.

Abstract: An adjustment method for filter units in a plasma processing apparatus includes a first measurement process of measuring a frequency characteristic of a reference filter unit selected among the filter units, and an adjustment process of adjusting a frequency characteristic of each of remaining filter units selected among the filter units excluding the reference filter unit. Further, the adjustment process includes an attachment process of attaching a capacitive member for adjusting a capacitance between wirings in each of the remaining filter units, a second measurement process of measuring a frequency characteristic of each of the remaining filter units to which the capacitive member is attached, and an individual adjustment process of adjusting a capacitance of the capacitive member such that the frequency characteristic of each of the remaining filter unit to which the capacitive member is attached becomes close to the frequency characteristic of the reference filter unit.

Abstract: An adjustment method for filter units in a plasma processing apparatus includes a first measurement process of measuring a frequency characteristic of a reference filter unit selected among the filter units, and an adjustment process of adjusting a frequency characteristic of each of remaining filter units selected among the filter units excluding the reference filter unit. Further, the adjustment process includes an attachment process of attaching a capacitive member for adjusting a capacitance between wirings in each of the remaining filter units, a second measurement process of measuring a frequency characteristic of each of the remaining filter units to which the capacitive member is attached, and an individual adjustment process of adjusting a capacitance of the capacitive member such that the frequency characteristic of each of the remaining filter unit to which the capacitive member is attached becomes close to the frequency characteristic of the reference filter unit.

Abstract: In a plasma processing apparatus, a high frequency power source is electrically connected to a lower electrode of a supporting table through a power feeding unit. The power feeding unit is surrounded by a conductor pipe outside the chamber. An electrostatic chuck of the supporting table has therein a plurality of heaters. A filter device is provided between the heaters and a heater controller. The filter device includes a plurality of coil groups, each of the coil groups including two or more coils. In each of the coil groups, the two or more coils are arranged such that winding portions of the two or more coils extend in a spiral shape around a central axis and turns of the winding portions are arranged sequentially and repeatedly, and the coil groups are provided coaxially to the central axis to surround the conductor pipe directly below the chamber.