Abstract: A plasma CVD system has a processing chamber having a thin film forming section, and a transfer section communicating with the thin film forming section through a connecting opening. The system includes a thin film forming device, located in the thin film forming section, for producing plasma to form a thin film on a substrate at the connecting opening, a transfer device, located in the transfer section, for bringing a substrate holding member into and out of the processing chamber, and a heat transfer plate which does not project beyond the edge of the substrate when moved into abutment against a rear face of the substrate held by the substrate holding member to move the substrate from the substrate holding member towards the thin film forming section. The heat transfer plate also conducts heat to the substrate.