Patents by Inventor Ryuzou Houchin
Ryuzou Houchin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140048527Abstract: A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. An upper portion includes a tray support surface supporting a lower surface of the tray, substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement portion. During carrying of the substrate, the outer peripheral edge of the lower surface of the substrate is supported by the substrate accommodation hole. During processing of the substrate, the substrate support portion is accommodated in the concave portion.Type: ApplicationFiled: October 24, 2013Publication date: February 20, 2014Applicant: Panasonic CorporationInventors: Shogo OKITA, Hiromi ASAKURA, Syouzou WATANABE, Ryuzou HOUCHIN, Hiroyuki SUZUKI
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Patent number: 8591754Abstract: A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. An upper portion includes a tray support surface supporting a lower surface of the tray, substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement portion. During carrying of the substrate, the outer peripheral edge of the lower surface of the substrate is supported by the substrate accommodation hole. During processing of the substrate, the substrate support portion is accommodated in the concave portion.Type: GrantFiled: June 20, 2012Date of Patent: November 26, 2013Assignee: Panasonic CorporationInventors: Shogo Okita, Hiromi Asakura, Syouzou Watanabe, Ryuzou Houchin, Hiroyuki Suzuki
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Patent number: 8563332Abstract: Provided is a wafer reclamation method for reclaiming a semiconductor wafer, on which a different material layer is formed, by removing the different material layer. The wafer reclamation method includes a physically removing step of physically removing the different material layer, a film forming step of forming a film on a surface of the semiconductor wafer from which the different material layer has been removed in the physically removing step, and a dry etching step of etching the semiconductor wafer by plasma together with the film formed in the film forming step.Type: GrantFiled: August 25, 2008Date of Patent: October 22, 2013Assignee: Panasonic CorporationInventors: Shogo Okita, Gaku Sugahara, Hiroyuki Suzuki, Ryuzou Houchin, Mitsuru Hiroshima
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Publication number: 20120256363Abstract: A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. An upper portion includes a tray support surface supporting a lower surface of the tray, substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement portion. During carrying of the substrate, the outer peripheral edge of the lower surface of the substrate is supported by the substrate accommodation hole. During processing of the substrate, the substrate support portion is accommodated in the concave portion.Type: ApplicationFiled: June 20, 2012Publication date: October 11, 2012Inventors: Shogo OKITA, Hiromi Asakura, Syouzou Watanabe, Ryuzou Houchin, Hiroyuki Suzuki
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Patent number: 8231798Abstract: A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. A dielectric plate includes a tray support surface supporting a lower surface of the tray, substrate placement portions inserted from a lower surface side of the tray into the substrate accommodation holes and having a substrate placement surface at its upper end surface. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement surface. The substrate is retained on the substrate placement surface with high degree of adhesion. Cooling efficiency of the substrate is improved and processing is uniform at the entire region of the substrate surface.Type: GrantFiled: October 14, 2009Date of Patent: July 31, 2012Assignee: Panasonic CorporationInventors: Shogo Okita, Hiromi Asakura, Syouzou Watanabe, Ryuzou Houchin, Hiroyuki Suzuki
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Publication number: 20100173431Abstract: Provided is a wafer reclamation method for reclaiming a semiconductor wafer, on which a different material layer is formed, by removing the different material layer. The wafer reclamation method includes a physically removing step of physically removing the different material layer, a film forming step of forming a film on a surface of the semiconductor wafer from which the different material layer has been removed in the physically removing step, and a dry etching step of etching the semiconductor wafer by plasma together with the film formed in the film forming step.Type: ApplicationFiled: August 25, 2008Publication date: July 8, 2010Applicant: PANASONIC CORPORATIONInventors: Shogo Okita, Gaku Sugahara, Hiroyuki Suzuki, Ryuzou Houchin, Mitsuru Hiroshima
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Patent number: 7736528Abstract: A tray 15 for a dry etching apparatus 1 has substrate accommodation holes 19A to 19D penetrating thickness direction and a substrate support portion 21 supporting an outer peripheral edge portion of a lower surface 2a of a substrate 2. A dielectric plate 23 has a tray support surface 28 supporting a lower surface of the tray 15, substrate placement portions 29A through 29D inserted from a lower surface side of the tray 15 into the substrate accommodation holes 19A through 19D and having a substrate placement surface 31 at its upper end surface for placing the substrate 2. A dc voltage applying mechanism 43 applies a dc voltage to an electrostatic attraction electrode 40. A heat conduction gas supply mechanism 45 supplies a heat conduction gas between the substrate 2 and substrate placement surface 31. The substrate 2 can be retained on the substrate placement surface 31 with high degree of adhesion.Type: GrantFiled: October 10, 2006Date of Patent: June 15, 2010Assignee: Panasonic CorporationInventors: Shogo Okita, Hiromi Asakura, Syouzou Watanabe, Ryuzou Houchin, Hiroyuki Suzuki
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Publication number: 20100051584Abstract: A tray 15 for a dry etching apparatus 1 has substrate accommodation holes 19A to 19D penetrating thickness direction and a substrate support portion 21 supporting an outer peripheral edge portion of a lower surface 2a of a substrate 2. A dielectric plate 23 has a tray support surface 28 supporting a lower surface of the tray 15, substrate placement portions 29A through 29D inserted from a lower surface side of the tray 15 into the substrate accommodation holes 19A through 19D and having a substrate placement surface 31 at its upper end surface for placing the substrate 2. A dc voltage applying mechanism 43 applies a dc voltage to an electrostatic attraction electrode 40. A heat conduction gas supply mechanism 45 supplies a heat conduction gas between the substrate 2 and substrate placement surface 31. The substrate 2 can be retained on the substrate placement surface 31 with high degree of adhesion.Type: ApplicationFiled: October 14, 2009Publication date: March 4, 2010Inventors: Shogo OKITA, Hiromi ASAKURA, Syouzou WATANABE, Ryuzou HOUCHIN, Hiroyuki SUZUKI
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Publication number: 20090255901Abstract: A tray 15 for a dry etching apparatus 1 has substrate accommodation holes 19A to 19D penetrating thickness direction and a substrate support portion 21 supporting an outer peripheral edge portion of a lower surface 2a of a substrate 2. A dielectric plate 23 has a tray support surface 28 supporting a lower surface of the tray 15, substrate placement portions 29A through 29D inserted from a lower surface side of the tray 15 into the substrate accommodation holes 19A through 19D and having a substrate placement surface 31 at its upper end surface for placing the substrate 2. A dc voltage applying mechanism 43 applies a dc voltage to an electrostatic attraction electrode 40. A heat conduction gas supply mechanism 45 supplies a heat conduction gas between the substrate 2 and substrate placement surface 31. The substrate 2 can be retained on the substrate placement surface 31 with high degree of adhesion.Type: ApplicationFiled: October 11, 2006Publication date: October 15, 2009Inventors: Shogo Okita, Hiromi Asakura, Syouzou Watanabe, Ryuzou Houchin, Hiroyuki Suzuki
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Publication number: 20090218045Abstract: The plasma processing apparatus has a beam-shaped spacer 7 placed at the upper opening of the chamber 3 opposed to the substrate 2. The beam-shaped spacer 7 has an annular outer peripheral portion 7a whose lower surface 7d is supported by the chamber 3, a central portion 7b located at the center of a region surrounded by the outer peripheral portion 7a in plane view, and a plurality of beam portions 7c extending radially from the central portion 7b to the outer peripheral portion 7a. An entire of a dielectric plate 8 is uniformly supported by the beam-shaped spacer 7. The dielectric plate 8 can be reduces in thickness while securing a mechanical strength for supporting the atmospheric pressure when the chamber 3 is internally reduced in pressure.Type: ApplicationFiled: November 1, 2006Publication date: September 3, 2009Inventors: Mitsuru Hiroshima, Hiromi Asakura, Syouzou Watanabe, Mitsuhiro Okune, Hiroyuki Suzuki, Ryuzou Houchin