Patents by Inventor Sébastien Soulan

Sébastien Soulan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for correcting electronic proximity effects using the deconvolution of the pattern to be exposed by means of a probabilistic method
    Patent number: 9223926
    Abstract: A method of lithography by radiation having critical dimensions of the order of some ten nanometers makes it possible to carry out the correction of the proximity effects by joint optimization of the dose modulation and geometric corrections. Accordingly, a deconvolution of the pattern to be etched is carried out by an iterative procedure modeling the interactions of the radiation with the resined support by a joint probability distribution. Advantageously, when the support exposure tool is of formed-beam type, the pattern to be etched is split into contrasted levels and then the deconvolved image is vectorized and fractured before carrying out the exposure step. In an advantageous embodiment, the method is applied to at least two character cells which are exposed in a multi-pass cells projection method.
    Type: Grant
    Filed: September 12, 2012
    Date of Patent: December 29, 2015
    Assignees: Aselta Nanographics, Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventor: Sébastien Soulan
  • METHOD FOR CORRECTING ELECTRONIC PROXIMITY EFFECTS USING THE DECONVOLUTION OF THE PATTERN TO BE EXPOSED BY MEANS OF A PROBABILISTIC METHOD
    Publication number: 20140344769
    Abstract: A method of lithography by radiation having critical dimensions of the order of some ten nanometers makes it possible to carry out the correction of the proximity effects by joint optimization of the dose modulation and geometric corrections. Accordingly, a deconvolution of the pattern to be etched is carried out by an iterative procedure modeling the interactions of the radiation with the resined support by a joint probability distribution. Advantageously, when the support exposure tool is of formed-beam type, the pattern to be etched is split into contrasted levels and then the deconvolved image is vectorized and fractured before carrying out the exposure step. In an advantageous embodiment, the method is applied to at least two character cells which are exposed in a multi-pass cells projection method.
    Type: Application
    Filed: September 12, 2012
    Publication date: November 20, 2014
    Applicants: ASELTA NANOGRAPHICS, COMMISSARIAT A L'ENERGIE ATOMIZUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Sébastien Soulan