Abstract: This invention is a design for lateral field film bulk acoustic resonators (LF-FBAR). All electrodes in this design are located on one surface of the piezoelectric material, thereby simplifying manufacturing and improving performance. The gap between electrodes is limited to a specified dimension to maximize the efficiency of the device. Single and multi-pole devices are described. Barium magnesium fluoride and lithium niobate are specified as the piezoelectric material for high frequency applications.

Abstract: A film bulk acoustic resonator (FBAR) configured as a coplanar transmission line structure. A film resonator formed over an opening in a substrate is connected to associated circuitry by one or more transmission lines formed on the substrate. The coplanar ground plane of this structure provides a simple mechanism for providing a true ground connection to the resonator without the need for vias passing through the substrate. The transmission line connection eliminates the need for wirebonds, thus simplifying fabrication, allowing the device to be more easily modified for computer simulation, and facilitating the operation of the device at microwave frequencies. Embodiments for standard, stacked, and 3-port FBAR's as well as a filter bank consisting of a plurality of coplanar 3-port FBAR's, are described.

Abstract: A ferroelectric device that comprises a polarizing thin film of BaMF.sub.4 deposited on a substrate. Ba is barium, M is one of the metals of the group consisting of iron (FE), manganese (Mn), cobolt (Co), nickel (Ni), magnesium (Mg), and zinc (Zn). The substrate is silicon, sapphire, or gallium arsenide. A non-volatile NDRO and DRO memory cell and methods for depositing the thin film. A method of depositing bismuth titanate on a substrate are described.