Abstract: A method of forming fine patterns of a semiconductor device comprises forming sacrificial film patterns of a line type in a cell region of a semiconductor substrate and, at the same time, forming pad patterns in a peripheral region of the semiconductor substrate, forming a spacer on sidewalls of each of the sacrificial film patterns and the pad patterns, forming a gap-fill layer on sidewalls of the spacers to thereby form line and space patterns, including the sacrificial film patterns and the gap-fill layers, in the cell region, and separating the line and space patterns of the cell region at regular intervals and, at the same time, etching the pad patterns of the peripheral region to thereby form specific patterns in the peripheral region.

Abstract: A method of forming fine patterns of a semiconductor device comprises forming sacrificial film patterns of a line type in a cell region of a semiconductor substrate and, at the same time, forming pad patterns in a peripheral region of the semiconductor substrate, forming a spacer on sidewalls of each of the sacrificial film patterns and the pad patterns, forming a gap-fill layer on sidewalls of the spacers to thereby form line and space patterns, including the sacrificial film patterns and the gap-fill layers, in the cell region, and separating the line and space patterns of the cell region at regular intervals and, at the same time, etching the pad patterns of the peripheral region to thereby form specific patterns in the peripheral region.

Abstract: A method of manufacturing a semiconductor device according to the invention is an effective technique for ensuring a sufficient process margin and enabling the formation of a fine pattern in a peripheral circuit region. The method includes forming an anti-reflective layer with a varying thickness in a peripheral circuit region and a cell region, and then over-etching the anti-reflective layer in the peripheral circuit region. The method is capable of improving the data processing speed of a semiconductor device and therefore increases the device efficiency.

Abstract: A method for manufacturing a semiconductor device comprises forming a protective film over a photoresist pattern to improve the residual ratio of the photoresist pattern. The method comprises forming a photoresist pattern over an underlying layer and forming a protective pattern on an upper portion and sidewalls of the photoresist pattern.

Abstract: A method for manufacturing a semiconductor device includes forming a plurality bar patterns over an underlying layer. A spacer is formed at both sides of the bar patterns and the bar patterns are removed. The spacers are isolated by an exposing process to form a vernier pattern. The underlying layer is etched using the vernier pattern as an etching mask.

Abstract: A method of manufacturing a template for nano imprint lithography process may include: forming a chrome layer, an intermediate film, and a photoresist film sequentially over a substrate. The method may further include forming a photoresist film pattern; forming an intermediate film pattern with the photoresist film pattern as an etching mask; and forming a spacer at a sidewall of the intermediate film pattern. The intermediate film pattern may be removed using an etching selectivity between the intermediate film pattern and the spacer. Finally, the chrome layer and the substrate may be etched using the spacer as an etching mask to form the template.

Abstract: A method for manufacturing a semiconductor device includes forming a second storage node contact hole with a mask for storage node and securing an overlay margin between a storage node contact hole and a storage node with a hard mask layer that serves as a hard mask as well as an anti-reflection film to reduce contact resistance, prevent reduction of a line-width of a lower interlayer insulating film and eliminate processes for depositing the interlayer insulating film and a polysilicon layer and etching the polysilicon layer to reduce a production period and cost of products.

Abstract: A method of manufacturing a semiconductor device according to the invention is an effective technique for ensuring a sufficient process margin and enabling the formation of a fine pattern in a peripheral circuit region. The method includes forming an anti-reflective layer with a varying thickness in a peripheral circuit region and a cell region, and then over-etching the anti-reflective layer in the peripheral circuit region. The method is capable of improving the data processing speed of a semiconductor device and therefore increases the device efficiency.

Abstract: A method for manufacturing a semiconductor device includes forming a second storage node contact hole with a mask for storage node and securing an overlay margin between a storage node contact hole and a storage node with a hard mask layer that serves as a hard mask as well as an anti-reflection film to reduce contact resistance, prevent reduction of a line-width of a lower interlayer insulating film and eliminate processes for depositing the interlayer insulating film and a polysilicon layer and etching the polysilicon layer to reduce a production period and cost of products.