Abstract: The present invention discloses a high electrochemical performance silicon/graphene composite anode structure. The electrochemical properties of silicon in the composite anode structure can be improved by graphene thin films. The thickness of the silicon thin film and the graphene thin films is less than 50 nm to prevent the composite anode structure from any volumetric change during the charge/discharge process. The manufacturing procedure starts with the formation of a Si/graphene unit layer, which includes an amorphous phase upper silicon thin film and a lower graphene thin film, on a copper foil current collector, so as to decrease the difference of conductivity between the silicon thin film and the copper foil current collector. Finally, the deposition is concluded with the formation of a graphene thin film on the topmost surface of the silicon thin film to prevent the surface of the anode structure from oxidation.