Abstract: A nanoresonator device with high quality factor and method for fabricating the same is disclosed herein. The nanoresonator device generally includes an input electrode, an output electrode, a nanoresonator anchored at its motionless nodal points of its resonance modes by support beam(s) and/or anchor. The nanoresonator device can be fabricated on various wafers including a silicon on insulator (SOI) wafer, which includes an insulating layer and a heavily doped silicon layer. The nano structures with high quality factor can be patterned on a film utilizing nano fabrication tools and the patterned structures can be utilized as a mask to form permanent nano structures on the silicon layer by reactive ion etching (RIE). The insulating layer can be removed to form the anchor beams and a cavity by wet etching utilizing an etching solution.