Patents by Inventor Saburo Kanai
Saburo Kanai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20030060054Abstract: A plasma treatment method of etching a substrate to be processed by using a gas plasma in a treatment chamber. The method includes exhausting reaction products obtained by etching and released into a vapor phase as a gas from the treatment chamber, wherein the reaction products on an outer periphery of the substrate are more efficiently exhausted and setting a deposition probability of the reaction products in a central part of a plane of the substrate to be low and setting a deposition probability of the reaction products in a peripheral part of a plane of the substrate to be high. The setting of the deposition probability is effected by setting a temperature in the central part of the substrate higher than a temperature in the peripheral part of the substrate.Type: ApplicationFiled: November 6, 2002Publication date: March 27, 2003Inventors: Kazue Takahashi, Saburo Kanai, Yoshiaki Satou, Takazumi Ishizu
-
Publication number: 20030030960Abstract: A wafer stage 2 for holding a semiconductor wafer in a plasma treatment apparatus by setting the wafer on the wafer stage, said wafer stage 2 comprising a base material 26 equipped with refrigerant flow paths for allowing a refrigerant for temperature adjustment to flow; a stress-reducing member 28 provided on the wafer setting side of said base material 26 and having a smaller thermal expansion coefficient than does said base material; a dielectric film 30 provided on the wafer setting side of said stress-reducing member; and a deflection-preventing member 29 provided on the wafer non-setting side of said base material and having a smaller thermal expansion coefficient than does said base material. When the wafer stage is used, the temperature of the wafer as a substrate to be processed can be controlled uniformly and very accurately.Type: ApplicationFiled: September 6, 2001Publication date: February 13, 2003Inventors: Seiichiro Kanno, Hironobu Kawahara, Mitsuru Suehiro, Saburo Kanai, Ken Yoshioka
-
Publication number: 20030029572Abstract: A wafer stage 2 for holding a semiconductor wafer in a plasma treatment apparatus by setting the wafer on the wafer stage, said wafer stage 2 comprising a base material 26 equipped with refrigerant flow paths for allowing a refrigerant for temperature adjustment to flow; a stress-reducing member 28 provided on the wafer setting side of said base material 26 and having a smaller thermal expansion coefficient than does said base material; a dielectric film 30 provided on the wafer setting side of said stress-reducing member; and a deflection-preventing member 29 provided on the wafer non-setting side of said base material and having a smaller thermal expansion coefficient than does said base material. When the wafer stage is used, the temperature of the wafer as a substrate to be processed can be controlled uniformly and very accurately.Type: ApplicationFiled: April 1, 2002Publication date: February 13, 2003Inventors: Seiichiro Kanno, Hironobu Kawahara, Mitsuru Suehiro, Saburo Kanai, Ken Yoshioka
-
Publication number: 20030024646Abstract: A plasma etching apparatus for etching of a sample having an etching chamber having an upper wall and a sidewall, an exchangeable jacket which is held inside of the sidewall and a heating mechanism for generating heat which radiates toward an interior of the etching chamber, the sample being disposed in the etching chamber. The apparatus includes an evacuation system which evacuates the etching chamber, an etching gas supply which supplies an etching gas into the chamber and a plasma generator which generates a plasma for performing etching of the sample in the etching chamber and at least one temperature controller for controlling a temperature of at least one such upper wall and said sidewall of said etching chamber.Type: ApplicationFiled: September 25, 2002Publication date: February 6, 2003Inventors: Toshio Masuda, Kazue Takahashi, Mitsuru Suehiro, Tetsunori Kaji, Saburo Kanai
-
Patent number: 6499424Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: GrantFiled: July 23, 2001Date of Patent: December 31, 2002Assignee: Hitachi, Ltd.Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
-
Patent number: 6481370Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: GrantFiled: December 8, 2000Date of Patent: November 19, 2002Assignee: Hitachi, Ltd.Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
-
Patent number: 6482747Abstract: Plasma treatment apparatus and method in which an influence on the treatment characteristics of reaction products in plasma treatment such as etching is offset, thereby enabling uniform treatment characteristics to be obtained in the plane of a substrate are provided. In a plasma treatment method of treating a substrate to be processed by using a gas plasma via a mask in a treatment chamber, plasma treatment is performed while optimizing an amount of deposition of a side wall protection layer, equalizing the optimized deposition amount in the center of the substrate and that in a peripheral part, and maintaining the uniformity in the plane of the side wall protection layer.Type: GrantFiled: December 22, 1998Date of Patent: November 19, 2002Assignee: Hitachi, Ltd.Inventors: Kazue Takahashi, Saburo Kanai, Yoshiaki Satou, Takazumi Ishizu
-
Publication number: 20020134510Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: May 7, 2002Publication date: September 26, 2002Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
-
Publication number: 20020124963Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: May 7, 2002Publication date: September 12, 2002Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
-
Publication number: 20020119670Abstract: A plasma processing method includes the steps of evacuating a vacuum vessel by an evacuation system, introducing a processing gas into the vacuum vessel, disposing an object or example to be processed within the vacuum vessel, supplying electrical bias power to a lower electrode within the vacuum vessel, radiating a high frequency electromagnetic wave within the vacuum vessel, and causing said processing gas to change into a plasma for performing processing of the object to be processed. The vacuum vessel includes a processing chamber having a sidewall and subjecting the sidewall to temperature control so that the temperature of the sidewall is controlled so as to be maintained within ±10° C. in a range of 20 to 80° C.Type: ApplicationFiled: October 20, 1999Publication date: August 29, 2002Inventors: TOSHIO MASUDA, KAZUE TAKAHASHI, MITSURU SUEHIRO, TETSUNORI KAJI, SABURO KANAI
-
Publication number: 20020084035Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: March 4, 2002Publication date: July 4, 2002Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
-
Publication number: 20020043338Abstract: A plasma etching apparatus for etching of a sample having an etching chamber having a sidewall, an exchangeable jacket which is held inside of the sidewall and a heating mechanism provided proximate to a top end of the exchangeable jacket for generating heat which radiates toward an interior of the etching chamber, the sample being disposed in the etching chamber. An evacuation system which evacuates the etching chamber, an etching gas supply which supplies an etching gas into the chamber and a plasma generator which generates a plasma for performing etching of the sample in the etching chamber.Type: ApplicationFiled: October 26, 2001Publication date: April 18, 2002Inventors: Toshio Masuda, Kazue Takahashi, Mitsuru Suehiro, Tetsunori Kaji, Saburo Kanai
-
Patent number: 6373681Abstract: A sample processing method includes electrostatically attracting and holding a sample on an electrostatic chuck which includes a pair of electrodes having different polarities and being concentrically disposed, and a dielectric film formed on top surfaces of the pair of electrodes, by applying a DC voltage between the pair of electrodes. The sample which is attracted and held on the chuck through the dielectric film is subjected to plasma processing while applying a bias voltage. The application of the bias voltage applied during plasma processing is stopped after termination of processing the sample, and an unbalance between electric charges stored on attracting portions of the dielectric film formed on the electrodes is eliminated by continuing generation of the plasma for a specific time after stopping the application of the bias voltage. The plasma is extinguished after an elapse of the specific time.Type: GrantFiled: April 13, 2001Date of Patent: April 16, 2002Assignee: Hitachi, Ltd.Inventors: Seiichiro Kanno, Tatehito Usui, Ken Yoshioka, Saburo Kanai, Youichi Itou
-
Publication number: 20020042206Abstract: A plasma etching method for etching a sample within an etching chamber having a sidewall, an exchangeable jacket which is held inside of the sidewall, and a heating mechanism proximate to top end of the exchangeable jacket for generating heat which radiates towards an inside of the etching chamber. The plasma etching method further including a step of evacuating the etching chamber by an evacuation system, a step of supplying an etching gas into the etching chamber, a step of generating a plasma for performing etching of the sample in the etching chamber, and a step of conducting a heating operation by the heating mechanism during an initial stage of the step of generating a plasma.Type: ApplicationFiled: October 26, 2001Publication date: April 11, 2002Inventors: Toshio Masuda, Kazue Takahashi, Mitsuru Suehiro, Tetsunori Kaji, Saburo Kanai
-
Patent number: 6370007Abstract: An electrostatic chuck for holding a substrate, including an electrode block which serves as an electrode for electrostatic attraction and a plurality of electrostatic attraction arranged on a surface of the electrode block. The electrostatic attraction members are disposed so as to attract the substrate electrostatically and to come in contact with the substrate. An insulating material covers the surface of the electrode block other than attraction surfaces of the electrostatic attraction members. Grooves made by the insulating material are provided between the individual electrostatic attraction members.Type: GrantFiled: March 1, 2001Date of Patent: April 9, 2002Assignee: Hitachi, Ltd.Inventors: Kazue Takahasi, Youichi Itou, Saburo Kanai, Seiichiro Kanno
-
Publication number: 20020005252Abstract: A plasma processing apparatus includes a vacuum vessel as evacuated by an evacuation system, a gas supply for supplying a processing gas into the vacuum vessel, an electrostatic chucking device for holding thereon a sample to be processed within the vacuum vessel, a lower electrode, a bias power source connected to the lower electrode for supplying bias power, and a radiator for radiating a high frequency electromagnetic wave within the vacuum vessel. The processing gas is made plasmatic and plasma is generated for use in performing processing of the sample to be processed. The radiator for radiating a high frequency electromagnetic wave including an antenna which is provided within the vacuum vessel. The antenna includes a conductor opposing the lower electrode and being connected to a high frequency bias power supply and a plate contacted with the conductor.Type: ApplicationFiled: October 20, 1999Publication date: January 17, 2002Inventors: TOSHIO MASUDA, KAZUE TAKAHASHI, MITSURU SUEHIRO, TETSUNORI KAJI, SABURO KANAI
-
Publication number: 20010042595Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: July 23, 2001Publication date: November 22, 2001Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
-
Publication number: 20010040009Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: July 23, 2001Publication date: November 15, 2001Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
-
Publication number: 20010037861Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: July 23, 2001Publication date: November 8, 2001Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
-
Publication number: 20010037857Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: December 8, 2000Publication date: November 8, 2001Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai