Patents by Inventor Saburou Oosaki

Saburou Oosaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOS transistor
    Patent number: 4710790
    Abstract: A gate electrode (4') of a MOS transistor is formed in a depression (16) provided in a substrate (1). Source and drain regions (6 and 7) of the MOS transistor are formed in the substrate (1) to be opposed to each other with the gate electrode (4') being located therebetween.
    Type: Grant
    Filed: July 3, 1984
    Date of Patent: December 1, 1987
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Tatsuo Okamoto, Kouji Eguchi, Saburou Oosaki