Abstract: The natural oxidation film of polysilicon, which is exposed at a side surface of a recess portion 83 provided in a substrate W, is removed and a thin film 84 of polysilicon is exposed at the side surface of the recess portion 83. Liquid IPA is brought into contact with the thin film 84 of polysilicon after the natural oxidation film of polysilicon is removed. Diluted ammonia water is supplied to the substrate W and the thin film 84 of polysilicon is etched after IPA comes into contact with the thin film 84 of polysilicon.

Abstract: A substrate processing method and a substrate processing apparatus are provided, which solve problems of pattern collapse and particles. The substrate processing method includes: a surface modification step of modifying a surface of a substrate having an oxide thereon to improve or reduce roughness of the surface; a surface cleaning step of supplying a treatment liquid to the modified surface of the substrate to clean the surface of the substrate with the treatment liquid; and a hydrophobization step of supplying a hydrophobizing agent to the cleaned surface of the substrate to hydrophobize the surface of the substrate.

Abstract: A substrate processing method and a substrate processing apparatus are provided, which solve problems of pattern collapse and particles. The substrate processing method includes: a surface modification step of modifying a surface of a substrate having an oxide thereon to improve or reduce roughness of the surface; a surface cleaning step of supplying a treatment liquid to the modified surface of the substrate to clean the surface of the substrate with the treatment liquid; and a hydrophobization step of supplying a hydrophobizing agent to the cleaned surface of the substrate to hydrophobize the surface of the substrate.

Abstract: A substrate processing method includes a substrate holding step of holding a substrate horizontally, a hydrophobic agent supplying step of supplying to an upper surface of the substrate a hydrophobic agent which is a liquid for hydrophobizing the upper surface of the substrate, a low surface-tension liquid supplying step of supplying the low surface-tension liquid to the upper surface of the substrate in order to replace the hydrophobic agent on the substrate by a low surface-tension liquid lower in surface tension than water, and a humidity adjusting step of adjusting humidity of the atmosphere in contact with a liquid film on the substrate such that the humidity of the atmosphere in contact with a liquid film on the substrate in the hydrophobic agent supplying step reaches a first humidity and the humidity of the atmosphere in contact with a liquid film on the substrate in the low surface-tension liquid supplying step reaches a second humidity which is humidity lower than the first humidity.

Abstract: The natural oxidation film of polysilicon, which is exposed at a side surface of a recess portion 83 provided in a substrate W, is removed and a thin film 84 of polysilicon is exposed at the side surface of the recess portion 83. Liquid IPA is brought into contact with the thin film 84 of polysilicon after the natural oxidation film of polysilicon is removed. Diluted ammonia water is supplied to the substrate W and the thin film 84 of polysilicon is etched after IPA comes into contact with the thin film 84 of polysilicon.

Abstract: A hole is formed on a liquid film of a low surface tension liquid which covers an entire region of an upper surface of a substrate, and a central portion of the upper surface of the substrate is exposed. The hole in the liquid film of the low surface tension liquid is expanded up to an outer circumference of the substrate. Discharge of hot water is stopped before formation of the hole in the liquid film of the low surface tension liquid. After the liquid film of the low surface tension liquid has been expelled from the upper surface of the substrate, hot water is supplied again to a lower surface of the substrate. A liquid adhering to the substrate is shaken off after stoppage of discharge of the hot water.

Abstract: A substrate processing method includes a forcing member disposing step of disposing a facing member such that the facing member faces an upper surface of a horizontally held substrate; a space forming step of forming a space where movement of the atmosphere in from and out to an outside is restricted by the substrate, the facing member, and a guard that surrounds the substrate and the facing member in plan view; an inert gas supplying step of supplying an inert gas to the space; an interval adjusting step of adjusting an interval between the upper surface of the substrate and the facing member by relatively raising/lowering the facing member with respect to the substrate while maintaining the space; and a processing liquid supplying step of supplying a processing liquid to the upper surface of the substrate after the interval adjusting step.

Abstract: A substrate processing method includes a liquid film forming step of forming a liquid film of the low surface tension liquid, an opening-forming step of forming an opening in the center region of the liquid film, a liquid film removal step of removing the liquid film from the upper surface of the substrate by widening the opening, a low surface tension liquid supply step of supplying a low surface tension liquid toward a first liquid landing point which is set on the outside of the opening, a hydrophobic agent supply step of supplying a hydrophobic agent toward a second liquid landing point which is set on the outside of the opening and further from the opening than the first liquid landing point, and a liquid landing point moving step of moving the first liquid landing point and the second liquid landing point so as to follow widening of the opening.

Abstract: A substrate processing method includes a substrate holding step of disposing a substrate at a position surrounded by a plurality of guards which have a first guard and a second guard in a plan view and of holding the substrate horizontally, a substrate rotating step of rotating the substrate around a vertical rotation axis which passes through a central portion of the substrate, a hydrophobic agent supplying step of supplying to the upper surface of the substrate in a rotating state a hydrophobic agent which is a liquid for hydrophobizing the upper surface of the substrate, a low surface-tension liquid supplying step of supplying the low surface-tension liquid to the upper surface of the substrate in the rotating state in order to replace the hydrophobic agent on the substrate by the low surface-tension liquid lower in surface tension than water, a first guard switching step of switching a state of the plurality of guards to a first state in which the first guard receives a liquid scattered from the substrate

Abstract: A substrate processing method includes a liquid film forming step of supplying a low surface tension liquid onto the upper surface of the substrate while rotating the substrate at a first rotational speed, in order to form a liquid film of the low surface tension liquid on the upper surface of the substrate, a rotation decelerating step of decelerating rotation of the substrate to a second rotational speed while continuing the liquid film forming step, after a processing liquid on the substrate has been replaced with the low surface tension liquid, an opening forming step of forming an opening in the center region of the liquid film on the substrate that rotates at the second rotational speed after completion of the liquid film forming step, and a liquid film removing step of removing the liquid film from the upper surface of the substrate by widening the opening.

Abstract: A substrate processing method includes a liquid film forming step of supplying a low surface tension liquid onto the upper surface of the substrate while rotating the substrate at a first rotational speed, in order to form a liquid film of the low surface tension liquid on the upper surface of the substrate, a rotation decelerating step of decelerating rotation of the substrate to a second rotational speed while continuing the liquid film forming step, after a processing liquid on the substrate has been replaced with the low surface tension liquid, an opening forming step of forming an opening in the center region of the liquid film on the substrate that rotates at the second rotational speed after completion of the liquid film forming step, and a liquid film removing step of removing the liquid film from the upper surface of the substrate by widening the opening.

Abstract: A substrate processing method includes a substrate holding step of holding a substrate horizontally, a hydrophobic agent supplying step of supplying to an upper surface of the substrate a hydrophobic agent which is a liquid for hydrophobizing the upper surface of the substrate, a low surface-tension liquid supplying step of supplying the low surface-tension liquid to the upper surface of the substrate in order to replace the hydrophobic agent on the substrate by a low surface-tension liquid lower in surface tension than water, and a humidity adjusting step of adjusting humidity of the atmosphere in contact with a liquid film on the substrate such that the humidity of the atmosphere in contact with a liquid film on the substrate in the hydrophobic agent supplying step reaches a first humidity and the humidity of the atmosphere in contact with a liquid film on the substrate in the low surface-tension liquid supplying step reaches a second humidity which is humidity lower than the first humidity.

Abstract: A substrate processing method includes a substrate holding step of disposing a substrate at a position surrounded by a plurality of guards which have a first guard and a second guard in a plan view and of holding the substrate horizontally, a substrate rotating step of rotating the substrate around a vertical rotation axis which passes through a central portion of the substrate, a hydrophobic agent supplying step of supplying to the upper surface of the substrate in a rotating state a hydrophobic agent which is a liquid for hydrophobizing the upper surface of the substrate, a low surface-tension liquid supplying step of supplying the low surface-tension liquid to the upper surface of the substrate in the rotating state in order to replace the hydrophobic agent on the substrate by the low surface-tension liquid lower in surface tension than water, a first guard switching step of switching a state of the plurality of guards to a first state in which the first guard receives a liquid scattered from the substrate

Abstract: A hole is formed on a liquid film of a low surface tension liquid which covers an entire region of an upper surface of a substrate, and a central portion of the upper surface of the substrate is exposed. The hole in the liquid film of the low surface tension liquid is expanded up to an outer circumference of the substrate. Discharge of hot water is stopped before formation of the hole in the liquid film of the low surface tension liquid. After the liquid film of the low surface tension liquid has been expelled from the upper surface of the substrate, hot water is supplied again to a lower surface of the substrate. A liquid adhering to the substrate is shaken off after stoppage of discharge of the hot water.

Abstract: A substrate processing method includes a liquid film forming step of supplying a low surface tension liquid onto the upper surface of the substrate while rotating the substrate at a first rotational speed, in order to form a liquid film of the low surface tension liquid on the upper surface of the substrate, a rotation decelerating step of decelerating rotation of the substrate to a second rotational speed while continuing the liquid film forming step, after a processing liquid on the substrate has been replaced with the low surface tension liquid, an opening forming step of forming an opening in the center region of the liquid film on the substrate that rotates at the second rotational speed after completion of the liquid film forming step, and a liquid film removing step of removing the liquid film from the upper surface of the substrate by widening the opening.

Abstract: A substrate processing method includes a facing-disposing step of disposing a facing member such that the facing member faces an upper surface of the horizontally held substrate, a space forming step of forming a space where movement of the atmosphere in from and out to an outside is restricted by the horizontally held substrate, the facing member, and a guard that surrounds the horizontally held substrate and the facing member in plan view, an inert gas supplying step of supplying an inert gas to the space, an interval adjusting step of adjusting an interval between the upper surface of the substrate and the facing member by relatively raising/lowering the facing member with respect to the horizontally held substrate while maintaining the space, and a processing liquid supplying step of supplying a processing liquid to the upper surface of the horizontally held substrate after the interval adjusting step.

Abstract: A substrate processing method includes a liquid film forming step of forming a liquid film of the low surface tension liquid, an opening-forming step of forming an opening in the center region of the liquid film, a liquid film removal step of removing the liquid film from the upper surface of the substrate by widening the opening, a low surface tension liquid supply step of supplying a low surface tension liquid toward a first liquid landing point which is set on the outside of the opening, a hydrophobic agent supply step of supplying a hydrophobic agent toward a second liquid landing point which is set on the outside of the opening and further from the opening than the first liquid landing point, and a liquid landing point moving step of moving the first liquid landing point and the second liquid landing point so as to follow widening of the opening.