Patents by Inventor Sadao Matsumura

Sadao Matsumura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9005466
    Abstract: In accordance with the present invention, there is provided a method for producing a single LTGA crystal from a polycrystalline starting material prepared from a mixture of La2O3, Ta2O5, Ga2O3, and Al2O3, wherein a mixture having a composition represented by y(La2O3)+(1?x?y?z)(Ta2O5)+z(Ga2O3)+x(Al2O3) (in the formula, 0<x?0.40/9, 3.00/9<y?3.23/9, and 5.00/9?z<5.50/9) is used as the polycrystalline starting material, and a single LTGA crystal is grown using the Z-axis as a crystal growth axis. The grown LTGA single crystal is preferably subjected to a vacuum heat treatment. The single LTGA crystal grown by the method according to the present invention, which is highly insulative and highly stable, can be utilized in such applications as a piezoelectric element of a highly reliable combustion pressure sensor useful in measurement of a combustion pressure in a combustion chamber of an internal combustion engine.
    Type: Grant
    Filed: March 9, 2011
    Date of Patent: April 14, 2015
    Assignee: Citizen Finetech Miyota Co., Ltd.
    Inventors: Takayuki Hayashi, Toshimitsu Aruga, Makoto Matsukura, Yutaka Anzai, Akio Miyamoto, Sadao Matsumura, Yasunori Furukawa
  • Publication number: 20130015393
    Abstract: In accordance with the present invention, there is provided a method for producing a single LTGA crystal from a polycrystalline starting material prepared from a mixture of La2O3, Ta2O5, Ga2O3, and Al2O3, wherein a mixture having a composition represented by y(La2O3)+(1-x-y-z)(Ta2O5)+z(Ga2O3)+x(Al2O3) (in the formula, 0<x?0.40/9, 3.00/9<y?3.23/9, and 5.00/9?z<5.50/9) is used as the polycrystalline starting material, and a single LTGA crystal is grown using the Z-axis as a crystal growth axis. The grown LTGA single crystal is preferably subjected to a vacuum heat treatment. The single LTGA crystal grown by the method according to the present invention, which is highly insulative and highly stable, can be utilized in such applications as a piezoelectric element of a highly reliable combustion pressure sensor useful in measurement of a combustion pressure in a combustion chamber of an internal combustion engine.
    Type: Application
    Filed: March 9, 2011
    Publication date: January 17, 2013
    Inventors: Takayuki Hayashi, Toshimitsu Aruga, Makoto Matsukura, Yutaka Anzai, Akio Miyamoto, Sadao Matsumura, Yasunori Furukawa
  • Patent number: 7751457
    Abstract: A laser-diode pumped solid-state laser apparatus comprises at least one laser diode producing a pumping laser light, and at least one laser light generator including a monocrystalline substance doped with a dopant element and pumped with the pumping laser light from at least one laser diode, the monocrystalline substance containing the dopant element with a concentration profile such that the dopant element increases a concentration thereof in a direction perpendicular to a laser oscillation direction gently in the form of a slope from a near zero concentration.
    Type: Grant
    Filed: June 22, 2007
    Date of Patent: July 6, 2010
    Assignees: Ricoh Company, Ltd., National Institutes of Natural Sciences, Oxide Corporation
    Inventors: Tsuyoshi Suzudo, Takunori Taira, Yoichi Sato, Yasunori Furukawa, Sadao Matsumura, Makoto Matsukura, Osamu Nakamura, Shinya Watanabe, Akio Miyamoto
  • Publication number: 20080043788
    Abstract: A laser-diode pumped solid-state laser apparatus comprises at least one laser diode producing a pumping laser light, and at least one laser light generator including a monocrystalline substance doped with a dopant element and pumped with the pumping laser light from at least one laser diode, the monocrystalline substance containing the dopant element with a concentration profile such that the dopant element increases a concentration thereof in a direction perpendicular to a laser oscillation direction gently in the form of a slope from a near zero concentration.
    Type: Application
    Filed: June 22, 2007
    Publication date: February 21, 2008
    Inventors: Tsuyoshi Suzudo, Takunori Taira, Yoichi Sato, Yasunori Furukawa, Sadao Matsumura, Makoto Matsukura, Osamu Nakamura, Shinya Watanabe, Akio Miyamoto
  • Patent number: 4672255
    Abstract: A surface acoustic wave device has been developed, such as a surface acoustic wave filter in which a plurality of electroacoustic interdigital electrodes are formed, as thin films made principally of aluminum, on the surface of a Li.sub.2 B.sub.4 O.sub.7 single crystal substrate and a surface acoustic wave resonator, in which a plurality of electroacoustic interdigital electrodes and grating reflectors for reflecting the surface acoustic wave are formed, as thin films made principally of aluminum, on the surface of a Li.sub.2 B.sub.4 O.sub.7 single crystal substrate. Here, a cut angle, at which the substrate is cut from the Li.sub.2 B.sub.4 O.sub.7 single crystal, and the propagation direction of the surface acoustic wave are so set that, when the Eulerian angle representation is (90.degree..+-..lambda., 90.degree..+-..mu., 90.degree..+-..theta.), .lambda.=38.degree. to 52.degree., .mu.=0.degree. to 5.degree. and .theta.=0.degree. to 10.degree., whereby the TCD of the surface acoustic wave device is below .
    Type: Grant
    Filed: August 14, 1986
    Date of Patent: June 9, 1987
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hitoshi Suzuki, Yasuo Ebata, Sadao Matsumura, Jisaburo Ushizawa
  • Patent number: 4591994
    Abstract: A method for controlling the shape of a single crystal. The weight of a single crystal pulled by the Czochralski method is detected, to obtain a weight signal W. The weight signal W is differentiated over time, to obtain a differential signal dW/dt. Using the differential signal dW/dt, (A.multidot.dW/dt+B).theta. is computed, to obtain an operation signal f. A and B are parameters which are determined by predetermined manufacturing conditions of the Czochralski method, and .theta. is a preset growing angle of the single crystal. The operation signal f is integrated over time, to obtain an integral signal F. The integral signal F and the differential signal dW/dt are compared to obtain a deviation signal. The heating power supplied to the crucible is controlled by use of the deviation signal, to keep the growing angle of the single crystal constant.
    Type: Grant
    Filed: October 18, 1983
    Date of Patent: May 27, 1986
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Syoichi Washizuka, Sadao Matsumura
  • Patent number: 4489250
    Abstract: A surface acoustic wave device having a lithium tatraborate single crystal substrate is proposed. An electro-mechanical coupling coefficient K.sup.2 of the substrate is about 1% so as to obtain a surface acoustic wave having sufficient practical energy. When cut angles of the substrate and a propagation direction of the surface acoustic wave are expressed by Eulerian angles (90+.lambda., 90.degree., 90.degree.), a thickness t of an electrode formed on the substrate falls within a region bounded by a dotted curve and an alternate long and short dash curve in FIG. 8. The dotted curve and the alternate long and short dash curve indicate the experimental relationship between the cut angle .lambda. and the thickness t when the TCD is set at 5 and -5 ppm/.degree.C., respectively. When the film thickness t is set within the above-mentioned range, the absolute value of the TCD is set at 5 ppm/.degree.C. or less. When the cut angle .lambda. is 25.degree., the TCD of the substrate becomes zero.
    Type: Grant
    Filed: June 27, 1983
    Date of Patent: December 18, 1984
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Yasuo Ebata, Hitoshi Suzuki, Sadao Matsumura, Katsuyoshi Fukuta
  • Patent number: 4383174
    Abstract: A device for detecting infrared rays using the pyroelectric effect, namely a pyroelectric detector, and methods for manufacturing the pyroelectric detector, are disclosed. The pyroelectric detector comprises a pyroelectric material, an electrode for receiving infrared rays placed on one face of the pyroelectric material, a shield electrode placed at the other face of the pyroelectric material, a substrate made of a semiconductor or conductive material which is fastened to the shield electrode, the substrate having a hole corresponding in position to the position of the infrared receiving electrode and a stand to which the substrate is fastened.
    Type: Grant
    Filed: September 23, 1980
    Date of Patent: May 10, 1983
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Sadao Matsumura, Katsuyoshi Fukuta, Hitoshi Hirano
  • Patent number: 4245200
    Abstract: An elastic surface wave device includes a transducer having an elastic surface wave propagated in the direction of 75 to 133 degrees to a Y-axis on an X-cut lithium tantalate (LiTaO.sub.3) substrate.
    Type: Grant
    Filed: November 22, 1978
    Date of Patent: January 13, 1981
    Assignee: Tokyo Shibaura Electric Co., Ltd.
    Inventors: Sadao Takahashi, Hitoshi Hirano, Sadao Matsumura
  • Patent number: 4245201
    Abstract: An elastic surface wave device includes a transducer having an elastic surface wave propagated in the direction of 75 to 133 degrees to a Y-axis on an X-cut lithium tantalate (LiTaO.sub.3) substrate.
    Type: Grant
    Filed: November 22, 1978
    Date of Patent: January 13, 1981
    Assignee: Tokyo Shibaura Electric Co., Ltd.
    Inventors: Sadao Takahashi, Hitoshi Hirano, Sadao Matsumura