Abstract: An in situ method for forming a HfO2 high-k dielectric layer in a batch wafer processing system. The method comprises first loading a plurality of wafers into a process chamber, and then pre-treating the plurality of wafers in the process chamber with a first oxidizer. After pre-treating the wafers, and without removing the wafers from the process chamber, the method then comprises depositing HfO2 on the plurality of wafers by atomic layer deposition, which comprises a plurality of deposition cycles, each cycle comprising alternating exposure of the plurality of wafers in the process chamber to a second oxidizer and a hafnium precursor. The hafnium precursor is selected from hafnium tert-butoxide (HTB) or hafnium tetra-diethylamide (TDEAH).

Abstract: A method of inspecting masks which have lithographic patterns thereon, comprises the steps of depositing an electron-emissive layer on the patterned first major surface of the mask, the electron-emissive layer on the clear area of the patterned surface emitting electron beams when irradiated with energy beams, applying energy beams to the patterned surface from behind through the second major surface of the mask, guiding the electron beams emitted from the electron-emissive layer to an electron optical system, thereby forming an electron beam image of the pattern on a detector means, and comparing detection signals corresponding to the pattern and output by the detector means with reference signals representing the design shape and size of the pattern, thereby to inspect the mask.

Abstract: A process for manufacturing sorbic acid in a continuous manner which comprises preparing a polyester from ketene and crotonaldehyde and then decomposing the polyester with hydrochloric acid in a multiple reactor system under such conditions that the degree of the decomposition of the starting polyester in each reactor is maintained at either (1) not more than 45 percent, or (2) not less than 90 percent.