Patents by Inventor Sadiq S. Bengali

Sadiq S. Bengali has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7612859
    Abstract: Various embodiments and methods relating to an ultra-violet radiation absorbing grid for attenuating transmission of near UV-light are disclosed.
    Type: Grant
    Filed: October 31, 2005
    Date of Patent: November 3, 2009
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Benjamin L. Clark, Sadiq S. Bengali
  • Patent number: 7569404
    Abstract: A silicon wafer substrate is used in ink-jet printhead fabrication. The fabrication process is improved by simultaneously forming MOSFET source/drain contact vias simultaneously with substrate contact vias. A dry etch having a silicon oxide:silicon etch rate of at least 10:1 is employed.
    Type: Grant
    Filed: January 27, 2006
    Date of Patent: August 4, 2009
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Victorio A. Chavarria, Sadiq S. Bengali, Ronald L. Enck
  • Patent number: 7037736
    Abstract: The present invention includes as one embodiment a method for fabricating a portion of an ink-jet printhead made of a silicon substrate, the method including selectively etching active region contact vias of a field effect transistor that has a conducting channel that is insulated from a gate terminal by a layer of oxide along with separate substrate contact vias using a single mask and forming the substrate contact vias simultaneously with the active region contact vias during the selective etching.
    Type: Grant
    Filed: May 13, 2003
    Date of Patent: May 2, 2006
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Victorio A. Chavarria, Sadiq S. Bengali, Ronald L. Enck
  • Publication number: 20040017427
    Abstract: A silicon wafer substrate is used in ink-jet printhead fabrication. The fabrication process is improved by simultaneously forming MOSFET source/drain contact vias simultaneously with substrate contact vias. A dry etch having a silicon oxide:silicon etch rate of at least 10:1 is employed.
    Type: Application
    Filed: May 13, 2003
    Publication date: January 29, 2004
    Inventors: Victorio A. Chavarria, Sadiq S. Bengali, Ronald L. Enck
  • Publication number: 20030202264
    Abstract: A micro-mirror device includes a substrate having a surface and a plate spaced from and oriented substantially parallel to the surface of the substrate such that the plate and the surface of the substrate define a cavity therebetween. A dielectric liquid is disposed in the cavity and a reflective element is interposed between the surface of the substrate and the plate. As such, the reflective element is adapted to move between a first position and at least one second position.
    Type: Application
    Filed: April 30, 2002
    Publication date: October 30, 2003
    Inventors: Timothy L. Weber, George Radominski, Norman L. Johnson, Terry E. McMahon, Donald W. Schulte, Jeremy H. Donaldson, Leonard A. Rosi, Sadiq S. Bengali
  • Patent number: 6582063
    Abstract: A silicon wafer substrate is used in ink-jet printhead fabrication. The fabrication process is improved by simultaneously forming MOSFET source/drain contact vias simultaneously with substrate contact vias. A dry etch having a silicon oxide:silicon etch rate of at least 10:1 is employed.
    Type: Grant
    Filed: March 21, 2001
    Date of Patent: June 24, 2003
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Victorio A. Chavarria, Sadiq S. Bengali, Ronald L. Enck